Provided is a radiation image detector, including: a substrate; an optical image detector located on the substrate; and a radiation conversion layer located above the optical image detector to convert radiation into visible light. The optical image detector includes a photosensitive pixel array formed by a plurality of photosensitive pixels arranged periodically; each photosensitive pixel includes a photoelectric conversion layer which is capable of converting the visible light into electric charges. The photoelectric conversion layer includes an active region and an inactive region. The active region occupies less than 70% of the area of the photoelectric conversion layer. Each photosensitive pixel further includes a light-guide layer located between the radiation conversion layer and the photoelectric conversion layer and configured to guide the visible light to the active region.

A combination structure includes an in-plane pattern of unit cells, wherein the each unit cell includes nanostructures each having a dimension that is smaller than a near-infrared wavelength and a light-absorbing layer adjacent to the nanostructures and including a near-infrared absorbing material configured to absorb light in at least a portion of a near-infrared wavelength spectrum. The nanostructures are define a nanostructure array in the unit cells, and a wavelength width at 50% transmittance of a transmission spectrum in the near-infrared wavelength spectrum of the combination structure is wider than a wavelength width at 50% transmittance of a transmission spectrum in the near-infrared wavelength spectrum of the nanostructure array.

An optical system includes an optical element and an optical filter with a first set of channels and a second set of channels respectively associated with a first region and a second region of the optical filter. The optical element causes first light beams and second light beams associated with a subject to respectively fall incident on the first region within a first incidence angle range and on the second region within a second incidence angle range. A first channel, of the first set of channels, passes, based on the first incidence angle range, a set of the first light beams that are associated with a first subrange of a particular wavelength range. A second channel, of the second set of channels, passes, based on the second incidence angle range, a set of the second light beams that are associated with a second subrange of the particular wavelength range.

An image pickup apparatus that enables to quickly capture an image from which a predetermined reflected light component is removed with desired sensitivity. A polarizing filter two-dimensionally arranges a plurality of sets each of which includes polarizing filter elements having different polarization directions. A first image sensor has pixels that respectively correspond to polarizing filter elements of the polarizing filter. A polarization calculation unit detects a polarized component of light that enters into a region in which one set of polarizing filter elements are arranged based on signals output from pixels in the region of the first image sensor for each region. A correction unit corrects a pixel signal output from a pixel of a second image sensor corresponding to the region based on a calculation result by the polarization calculation unit for each pixel of the second image sensor.

A solid-state imaging device having a first area and a second area surrounding the first area is provided. The solid-state imaging device includes a substrate having a plurality of photoelectric conversion elements. The solid-state imaging device also includes a color filter layer disposed on the substrate. The color filter layer includes a plurality of color filter segments corresponding to the plurality of photoelectric conversion elements. The solid-state imaging device further includes an optical waveguide layer over the color filter layer. The optical waveguide layer includes a waveguide partition grid, a waveguide material in spaces of the waveguide partition grid, and an anti-reflection film on the waveguide partition grid and the waveguide material. The width of the top of the waveguide partition grid is larger than the width of the bottom of the waveguide partition grid.

[Object] Provided is an electronic apparatus capable of Preventing image Quality deterioration of an image captured by a camera while reducing a bezel width.

[Solving Means] An electronic apparatus according to the present disclosure includes a display unit disposed on a first surface, a first imaging unit disposed on the side opposite to a display surface of the display unit, and a second imaging unit disposed on a second surface on the side opposite to the first surface. Sensitivity of the first imaging unit to a first wavelength band that includes blue light is higher than sensitivity of the second imaging unit to the first wavelength band. In addition, a ratio of blue light detection pixels in a pixel array of the first imaging unit may be higher than a ratio of blue light detection pixels in a pixel array of the second imaging unit.

A sensor package structure is provided and includes a substrate, a sensor chip, a ring-shaped supporting layer, and a light-permeable sheet. The sensor chip is disposed on and electrically coupled to the substrate. The ring-shaped supporting layer is disposed on the sensor chip and surrounds a sensing region of the sensor chip. The light-permeable sheet has a ring-shaped notch recessed in a peripheral edge of an inner surface of the light-permeable sheet, and a depth of the ring-shaped notch with respect to the inner surface is at least 10 tim. The light-permeable sheet is disposed on the ring-shaped supporting layer through the ring-shaped notch, and the inner surface is not in contact with the ring-shaped supporting layer, so that the inner surface of the light-permeable sheet, an inner side of the ring-shaped supporting layer, and the top surface of the sensor chip jointly define an enclosed space.

A decrease in image quality is suppressed. A solid-state imaging apparatus according to an embodiment includes: a photoelectric conversion unit (PD) including a material having a smaller band gap energy than silicon; and a circuit board joined to the photoelectric conversion unit, the circuit board including: a pixel signal generation circuit that generates a pixel signal having a voltage value corresponding to a charge generated in the photoelectric conversion unit; and a thermometer circuit that detects a temperature of the circuit board.

A photosensitive device includes a first photosensitive unit, a first collimator layer, a first lens, and a first dummy lens. The first photosensitive unit includes a first photosensitive component and a first control circuit. The first control circuit is electrically connected to the first photosensitive component. The first collimator layer is located above the first photosensitive component and has a first pinhole and a first dummy pinhole. The first lens is located above the first collimator layer and overlapping with the first photosensitive component and the first pinhole in a first direction. The first dummy lens is located above the first collimator layer and overlapping with the first dummy pinhole in the first direction.

A direct-bond hybridization (DBH) method is provided to assemble a sensor wafer device. The DBH method includes fabricating an optical element on a handle wafer and depositing first oxide with n-x thickness on the optical element where n is an expected final oxide thickness of the sensor wafer, depositing second oxide with x thickness onto a sensor wafer, executing layer transfer of the optical element by a DBH fusion bond technique to the sensor wafer whereby the first and second oxides form an oxide layer of n thickness between the optical element and the sensor wafer and removing the handle wafer.