An image sensing device includes a substrate layer in which an array of photoelectric conversion elements is formed, grid structures disposed over the substrate layer to divide space above the substrate into different sensing regions, each grid structure including an air layer, color filters formed to fill bottom portions of spaces between the grid structures, the color filters having a higher refractive index than the air layer, and a lens layer disposed over the grid structures and the color filters such that part of the lens layer fills top portions of the spaces between the grid structures, the lens layer having a higher refractive index than of the color filters.

An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

Provided is a semiconductor device capable of improving the optical response speed. The semiconductor device includes a pixel array portion in which a plurality of pixels are arranged in a matrix, each of the plurality of pixels including: a pixel forming region partitioned by a separation region in a semiconductor layer; a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type sequentially arranged from a first surface side of the pixel forming region toward a second surface side opposite to the first surface; a pn junction portion in which the first semiconductor region and the second semiconductor region are bonded; a charge extraction region of the second conductivity type provided in a side wall of the separation region; and a relay region of the second conductivity type provided at a position deeper than the second semiconductor region so as to be connected to the charge extraction region and the second semiconductor region. A plurality of the pn junction portions are scattered apart from each other, and the relay region has a higher impurity concentration than the second semiconductor region and terminates at a peripheral portion so as to surround a central portion of a surface of the second semiconductor region opposite to the pn junction portion side.

An image sensor includes a substrate including a plurality of photodiodes, a color filter array having a plurality of color filters, and a horizontal insulating layer disposed between the substrate and the color filter array, and a horizontal insulating layer is formed of only a high-K dielectric material, not including silicon, and having a dielectric constant higher than a dielectric constant of silicon oxide, and has a thickness of equal to or greater than 300 angstroms and equal to or less than 1,000.

An image sensor is disclosed. In some implementations, the image sensor includes a substrate including one or more photoelectric conversion elements arranged in the substrate and structured to convert light into electrical signals representing an image carried by the light, and a plurality of metal layers arranged at different distances from a surface of the substrate and located below the one or more photoelectric conversion elements, each of the metal layers including one or more metal patterns. The one or more metal patterns of the plurality of metal layers are arranged in a concave shape facing the photoelectric conversion element such that incident light reflected by metal layers converges toward the photoelectric conversion element.

A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.

A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

A pixel includes a semiconductor layer with a charge accumulation layer extending in the semiconductor layer. A transistor has a read region penetrating into said semiconductor layer down to a first depth. An insulating wall penetrates into the semiconductor layer from an upper surface and containing an insulated conductor connected to a node of application of a potential. The insulating wall includes at least a portion provided with a deep insulating plug penetrating into the insulated conductor down to a second depth greater than the first depth. A continuous portion of the insulating wall laterally delimits, at least partially, a charge accumulation area and includes a wall portion with the deep insulating plug at least partially laterally delimiting the read region of the transistor.

An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.

A pixel includes a semiconductor layer with a charge accumulation layer extending in the semiconductor layer. A transistor has a read region penetrating into said semiconductor layer down to a first depth. An insulating wall penetrates into the semiconductor layer from an upper surface and containing an insulated conductor connected to a node of application of a potential. The insulating wall includes at least a portion provided with a deep insulating plug penetrating into the insulated conductor down to a second depth greater than the first depth. A continuous portion of the insulating wall laterally delimits, at least partially, a charge accumulation area and includes a wall portion with the deep insulating plug at least partially laterally delimiting the read region of the transistor.