A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode. The stacked structure includes a first electrode, a first photoelectric conversion layer, and a second electrode that are stacked in order, and the electric charge accumulation electrode is disposed to be separated from the first electrode and be opposed to the first photoelectric conversion layer with an insulating layer interposed therebetween.

There is provided a solid-state imaging device including: a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a pixel separation section that is provided in the first semiconductor layer, and partitions a plurality of the pixels from each other; a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section; and a first shared coupling section that is provided between the second semiconductor layer and the first semiconductor layer, and is provided to straddle the pixel separation section and is electrically coupled to a plurality of the electric charge accumulation sections.

This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.

An image sensor including a first semiconductor region of a first conductivity type that is arranged in a substrate, a second semiconductor region of a second conductivity type that is arranged in the first semiconductor region to form a charge accumulation region. The second semiconductor region includes a plurality of portions arranged in a direction along a surface of the substrate. A potential barrier is formed between the plurality of portions. The second semiconductor region is wholly depleted by expansion of a depletion region from the first semiconductor region to the second semiconductor region. A finally-depleted portion to be finally depleted, of the second semiconductor region, is depleted by the expansion of the depletion region from a portion of the first semiconductor region, located in a lateral direction of the finally-depleted portion.

A semiconductor device, which is configured as a backside illuminated solid-state imaging device, includes a stacked semiconductor chip which is formed by bonding two or more semiconductor chip units to each other and in which, at least, a pixel array and a multi-layer wiring layer are formed in a first semiconductor chip unit and a logic circuit and a multi-layer wiring layer are formed in a second semiconductor chip unit; a semiconductor-removed region in which a semiconductor section of a part of the first semiconductor chip unit is completely removed; and a plurality of connection wirings which is formed in the semiconductor-removed region and connects the first and second semiconductor chip units to each other.

The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing. A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

Some embodiments of the present disclosure relate to a deep trench isolation structure. This deep trench isolation structure is formed on a semiconductor substrate having an upper semiconductor surface. A deep trench, which has a deep trench width as measured between opposing deep trench sidewalls, extends into the semiconductor substrate beneath the upper semiconductor surface. A fill material is formed in the deep trench, and a dielectric liner is disposed on a lower surface and sidewalls of the deep trench to separate the fill material from the semiconductor substrate. A shallow trench region has sidewalls that extend upwardly from the sidewalls of the deep trench to the upper semiconductor surface. The shallow trench region has a shallow trench width that is greater than the deep trench width. A dielectric material fills the shallow trench region and extends over top of the conductive material in the deep trench.

A system includes a pixel including a diffusion layer in contact with an absorption layer. A transparent conductive oxide (TCO) is electrically connected to the diffusion layer. An overflow contact is in electrical communication with the TCO. The overflow contact can be spaced apart laterally from the diffusion layer. The pixel can be one of a plurality of similar pixels arranged in a grid pattern, wherein each pixel has a respective overflow contact, forming an overflow contact grid offset from the grid pattern.

An object is to provide an imaging device with high efficiency of transferring charge corresponding to imaging data. The imaging device includes first to fifth conductors, first and second insulators, an oxide semiconductor, a photoelectric conversion element, and a transistor. The first conductor is in contact with a bottom surface and a side surface of the first insulator. The first insulator is in contact with a bottom surface of the oxide semiconductor. The oxide semiconductor is in contact with bottom surfaces of the second and third conductors and the second insulator. Each of the second and third conductors is in contact with the bottom surface and a side surface of the second insulator. The second insulator is in contact with bottom surfaces of the fourth and fifth conductors. The first conductor has regions overlapped by the fourth and fifth conductors. The second conductor has a region overlapped by the fourth conductor. The third conductor has a region overlapped by the fifth conductor. The second conductor is electrically connected to one electrode of the photoelectric conversion element. The third conductor is electrically connected to a gate of the transistor.

An imaging device includes at least one pixel having a phototransistor which converts light energy into signal charge and varies an amplification factor relative to the intensity of the received light energy, wherein the signal charge of the phototransistor is read out while receiving the light energy with the phototransistor for each pixel.