In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.

In an imaging device, a photoelectric converter of a first pixel and a photoelectric converter of a second pixel are arranged along a first direction. At least part of a charge accumulation portion of the first pixel is disposed between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel. An exit surface of a light guiding path of the first pixel is longer in a second direction orthogonal to the first direction in plan view than in the first direction.

An image sensor includes a pixel array including first pixels and second pixels, each of the first and second pixels including photodiodes, a sampling circuit detecting a reset voltage and a pixel voltage from the first and second pixels and generating an analog signal, an analog-to-digital converter image data from the analog signal, and a signal processing circuit generating an image using the image data. Each of the first pixels includes a first conductivity-type well separating the photodiodes and having impurities of a first conductivity-type. The photodiodes have impurities of a second conductivity-type different from the first conductivity-type. Each of the second pixels includes a second conductivity-type well separating the photodiodes and having impurities of the second conductivity-type different from the first conductivity-type. A potential level of the second conductivity-type well is higher than a potential level of the first conductivity-type well.

A sensing device is provided. The sensing device includes a driving substrate, a sensing module, and a plurality of bonding pads. The driving substrate includes a first substrate and a plurality of driving circuits disposed on the first substrate. Each of the driving circuits includes a plurality of thin-film transistors. The sensing module is bonded to the driving substrate, and the sensing module includes a second substrate and a plurality of sensing elements disposed on the second substrate. The sensing module is bonded to the driving substrate through the bonding pads. In addition, each of the driving circuits is electrically connected to at least one of the sensing elements. An electronic device including the sensing device is also provided.

An imaging apparatus of the present disclosure includes: a plurality of pixel blocks that each includes a plurality of light-receiving pixels including color filters of mutually the same color, the plurality of light-receiving pixels being divided into a plurality of pixel pairs each including two light-receiving pixels; and a plurality of lenses provided at respective positions corresponding to the plurality of pixel pairs.

A coherent imaging system including a transmitter and a receiver. The transmitter includes a coherent source and a power splitter for splitting the electromagnetic radiation into a reference and a signal beam. The receiver includes an image forming device and an array of pixels. Each of the pixels include means for collecting at least a portion of the signal beam imaged on the pixel by an image forming device, as a collected signal; means for splitting the collected signal into a plurality of collected signals each having different phase shifts; means for mixing each of the collected signals with the reference beam so as to form a plurality of mixed signals; and means for detecting the mixed signals and outputting a plurality of output electrical signals in response to the mixed signals.

A semiconductor apparatus includes a stack of first and second chips each having a plurality of pixel circuits arranged in a matrix form. The pixel circuit of the a-th row and the e1-th column is connected to the electric circuit of the p-th row and the v-th column. The pixel circuit of the a-th row and the f1-th column is connected to the electric circuit of the q-th row and the v-th column. The pixel circuit of the a-th row and the g1-th column is connected to the electric circuit of the r-th row and the v-th column. The pixel circuit of the a-th row and the h1-th column is connected to the electric circuit of the s-th row and the v-th column.

An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.

A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.

A solid-state image sensor including a photoelectric conversion region partitioned by trenches, a first semiconductor region surrounding the photoelectric conversion region, a first contact in contact with the first semiconductor region at a bottom portion of the trench, a first electrode in contact with the first contact in the first trench, a second semiconductor region in contact with the first semiconductor region having the same conductive type as the first semiconductor region, a third semiconductor region in contact with the second semiconductor region, between the second semiconductor region and a first surface, and having a second conductive type, a second contact on the first surface in contact with the third semiconductor region, and a second electrode in contact with the second contact, and a second surface at which the first contact and the first electrode are in contact with each other is inclined with respect to the first surface.