Disclosed herein is a ranging module including a light receiving element, a light emitting unit, and a light-emission control unit. The light receiving element has plural transfer gates which distribute and transfer, to plural floating diffusions, signal charge accumulated in a photodiode that photoelectrically converts incident light, and at least two of the plural transfer gates are disposed point-symmetrically with respect to an optical center as seen from a direction of incidence of the light. The light emitting unit emits irradiation light having a periodically varying brightness. The light-emission control unit controls irradiation timing of the irradiation light.

Methods and apparatus for an assembly having a first wafer including bulk material and a layer having microelectronics and a wafer with a deposited thin film which is bonded to the first wafer such that the reflected film is embedded within the composed assembly. The reflector wafer can include a handle wafer and a thin film having reflectance characteristics to prevent imaging of the microelectronics via light through the bulk material.

[Object] There are provided a solid-state imaging device that can minimize a decrease in layout efficiency due to trenches and a method of producing the same.

[Solution] A solid-state imaging device of the present disclosure includes a substrate including one or more vertical trenches extending in a longitudinal direction and a horizontal trench that extends in a lateral direction and is connected to the one or more vertical trenches, wherein the horizontal trench is provided between a photoelectric conversion unit and a charge holding unit in the substrate and includes a light-blocking film, and wherein the one or more vertical trenches include a first trench having a first width and including the light-blocking film, and a second trench having a second width narrower than the first width and not including the light-blocking film, or a third trench including a first part having a third width and including the light-blocking film and a second part having a fourth width narrower than the third width and not including the light-blocking film.

To provide an imaging device that suppresses reflection of incident light still more effectively and has excellent sensitivity characteristics. This imaging device includes a semiconductor substrate and a photoelectric conversion section. The semiconductor substrate includes a multi-stepped recess in which a plurality of respective holes defined by first outlines having substantially polygonal shapes is continuous in a thickness direction. The substantially polygonal shapes extend along a first surface orthogonal to the thickness direction and are different from each other in size in a plan view taken along the thickness direction. The photoelectric conversion section generates electric charge through photoelectric conversion. The photoelectric conversion section is defined by a second outline including a portion inclined with respect to the first outlines of the holes in a plan view. The electric charge corresponds to an amount of incident light passing through the multi-stepped recess.

An imaging device including: a first semiconductor substrate; a second semiconductor substrate; and a wiring layer. The first semiconductor substrate has a first surface and a second surface and includes a sensor pixel. The second semiconductor substrate has a third surface and a fourth surface and includes a readout circuit that outputs a pixel signal based on an output from the sensor pixel. The second semiconductor substrate is stacked on the first semiconductor substrate with the first surface and the fourth surface opposed to each other. The wiring layer is between the first semiconductor substrate and the second semiconductor substrate and includes a first wiring line and a second wiring line that are electrically coupled to each other. One of the first wiring line and the second wiring line is in an electrically floating state while the other is electrically coupled to a transistor.

A composition includes two or more near infrared absorbing compounds having an absorption maximum in a wavelength range of 650 to 1000 nm and having a solubility of 0.1 mass % or lower in water at 23° C., in which the two or more near infrared absorbing compounds include a first near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm, and a second near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm which is shorter than the absorption maximum of the first near infrared absorbing compound, and a difference between the absorption maximum of the first near infrared absorbing compound and the absorption maximum of the second near infrared absorbing compound is 1 to 150 nm.

A method for forming a semiconductor image sensor includes following operation. A first substrate including a first bottom side and a first top side is provided. A first interconnect structure is disposed under the first bottom side of the first substrate. An insulating structure is formed over the first top side of the first substrate. A conductor penetrating the insulating structure and the first substrate is formed and a first bonding pad is formed in the insulating structure. A second substrate including a second bottom side and a second top side is provided with the second bottom side facing the first top side of the first substrate. A second interconnect structure is disposed under the second bottom side of the second substrate, and a second bonding pad is coupled to the second interconnect structure. The first bonding pad is bonded to the second bonding pad to form a first bonded structure.

A method includes following steps. A first III-V compound layer is epitaxially grown over a semiconductive substrate. The first III-V compound layer has an energy gap in a gradient distribution. A source/drain contact is formed over the first III-V compound layer. A gate structure is formed over the first III-V compound layer.

A photodetector includes a gate electrode extending in a first direction, a ferroelectric layer on the gate electrode and maintaining a state of polarization formed by a gate voltage applied to the gate electrode, a light absorbing layer on the ferroelectric layer and extending in a second direction intersecting the gate electrode, the light absorbing layer including a two-dimensional (2D) material of a layered structure, a source electrode on the ferroelectric layer and connected to a first end of the light absorbing layer, and a drain electrode on the ferroelectric layer and connected to the a second end of the light absorbing layer.

A composition includes a near infrared absorbing pigment and a solvent, in which the near infrared absorbing pigment is at least one selected from a colorant compound which has a cation and an anion in the same molecule, a colorant compound which is a salt of a cationic chromophore and a counter anion, and a colorant compound which is a salt of an anionic chromophore and a counter cation, a D50 particle size in which a cumulative volume in a particle size distribution of particle sizes of the near infrared absorbing pigment is 50% is 100 nm or lower, and d values of Hansen solubility parameters of the near infrared absorbing pigment and the solvent satisfy a predetermined expression.