An example object of the present invention is to provide a bolometer-type detector capable of reducing heat transfer between pixels. A bolometer-type detector according to an example aspect of the present invention includes a plurality of pixels, and at least includes: a substrate, a heat insulating layer provided on the substrate, bolometer films provided on individual pixels on the heat insulating layer, and a wiring for signal output connected to contact electrodes provided in contact with the bolometer films, wherein the wiring for signal output is disposed in a layer different from the bolometer films, and the heat insulating layer between adjacent pixels is removed at least partially in the depth direction and in a region of a length of 50% or longer and a width of 100 nm or wider of a closed curve that surrounds each bolometer film.

An imaging unit includes a photoelectric conversion layer including a compound semiconductor and having a light incident surface, and a light shielding portion provided in an optical path of light incident on the light incident surface and shielding light having a wavelength of less than 450 nm.

A thermographic sensor is proposed. The thermographic sensor includes a plurality of sensing elements each comprising at least one thermo-couple. The thermographic sensor is integrated on a semiconductor on insulator body that is patterned to define a grid suspended from a substrate; for each sensing element, the grid has a frame with the cold joint of the thermo-couple, a plate with the hot joint of the thermo-couple and one or more arms sustaining the plate from the frame. The frames include one or more conductive layers of thermally conductive material for thermally equalizing the cold joints with the substrate. Moreover, each sensing element may also include a processing circuit for the thermo-couple that is integrated on the corresponding frame. A thermographic device including the thermographic sensor and a corresponding signal processing circuit, and a system including one or more thermographic devices are also proposed.

A control circuit for infrared detectors, includes: a driving circuit configured to drive a plurality of infrared detectors and generates, for each frame, a signal according to infrared rays incident on the plurality of infrared detectors; a holding circuit configured to hold a first signal generated by the driving circuit in a first frame and a second signal generated by the driving circuit in a second frame before the first frame; a difference calculation circuit configured to calculate a difference between the first signal and the second signal; and an amplifier circuit configured to amplify and output the difference calculated by the difference calculation circuit.

An imaging device including a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface; a first transistor located on the second surface; and a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate. The semiconductor substrate is a silicon substrate or a silicon compound substrate, and the photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 μm, and the material has a quantum nanostructure.

A surface texture recognition sensor, a surface texture recognition device and a surface texture recognition method thereof, and a display device are disclosed. The surface texture recognition sensor is configured to recognize a ridge and a valley of a surface, and includes: a first dielectric layer and a second dielectric layer which overlap with each other; a light source which is configured to emit light into the first dielectric layer; and a photosensitive detector which is at a side of the second dielectric layer away from the first dielectric layer. The light emitted from the light source is incident onto the interface with an incident angle; with the recognition unit being in contact with the surface, refractive index of at least one of the first dielectric layer and the second dielectric layer is changed to allow a critical angle of total reflection to be changed.

An imaging device including pixels each including a photoelectric converter that converts light into a signal charge; and controller, where the controller causes the pixels to perform global shutter operation in a first frame period and causes the pixels to perform rolling shatter operation in a second frame period different from the first frame period.

The present disclosure relates to a solid-state image sensor and an electronic device capable of simultaneously imaging a subject image and detecting a moving object. A solid-state image sensor according to an aspect of the present disclosure is provided with an infrared light detection unit which outputs a moving object image on the basis of infrared light out of incident light, and a visible light detection unit which outputs a subject image on the basis of visible light out of the incident light, in which the infrared light detection unit and the visible light detection unit are stacked and simultaneously output the moving object image and the subject image with the same frame and the same angle of view. The present disclosure is applicable to, for example, an electronic device having an imaging function for detecting a moving object.

Provided are an apparatus and a method for infrared imaging, more particularly, an apparatus and a method for infrared imaging, which receive infrared light, emitted from a target, and output the received infrared light as an image. An infrared imaging apparatus, in accordance with an exemplary embodiment, receives infrared light, emitted from a target, and outputs the received infrared light as an image. The infrared imaging apparatus includes: a reaction unit having physical properties changing in response to the received infrared light; a light source unit for generating measurement light irradiated toward the reaction unit; and an imaging unit for detecting the measurement light with the light quantity thereof changing depending on a change in the physical properties of the reaction unit and outputting the detected measurement light as an image.

An imaging device including pixels having a photoelectric converter including a first and second electrode, a photoelectric conversion layer; a charge accumulation region electrically connected to the first electrode; and a signal detection circuit. The photoelectric converter is applied with a voltage between the first electrode and the second electrode, and the photoelectric converter has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. A difference between the first voltage and the second voltage is 0.5 V or more, and the voltage supply circuit supplies a voltage between the first voltage and the second voltage to the second electrode in a non-exposure period.