The present disclosure provides a flat panel detector and a medical image detection device. The flat panel detector includes a base substrate, wherein the base substrate is divided into a plurality of detection units, each detection unit includes a first absorbing layer and a second absorbing layer, both of which are arranged on the base substrate in a laminating manner, the second absorbing layer is located on one side, away from the base substrate, of the first absorbing layer, and an energy level of rays absorbed by the second absorbing layer is smaller than that of rays absorbed by the first absorbing layer; a voltage supply electrode structure; and an output circuit, electrically connected to the voltage supply electrode structure and configured to output a first detection signal of the first absorbing layer and a second detection signal of the second absorbing layer.

A digital X-ray detector comprises a pixel array including a plurality of pixel regions; and a data line; and a read-out driver connected to the data line, wherein each pixel region includes a photo-sensing element and a pixel switch disposed between the photo-sensing element and the data line, wherein the read-out driver includes: an amplification unit connected to each data line; a first association signal detector connected to an output of the amplification unit and detecting a first association signal corresponding to an offset of the amplification unit; a second association signal detector connected to the output of the amplification unit and detecting a second association signal including an output signal of the photo-sensing element; and a third association signal detector connected to the output of the amplification unit and detecting a third association signal corresponding to an offset of the pixel region.

Disclosed herein is an apparatus suitable for detecting X-ray. The apparatus may comprise an X-ray absorption layer, an electronics layer and a distribution layer. The X-ray absorption layer may comprise a first plurality of electric contacts and configured to generate electrical signals on the first plurality of electric contacts from X-ray incident on the X-ray absorption layer. The electronics layer may comprise a second plurality of electric contacts and an electronic system, wherein the electric system electrically connects to the second plurality of electric contacts and is configured to process or interpret the electrical signals. The first plurality of electric contacts and the second plurality of electric contacts have different spatial distributions. The distribution layer is configured to electrically connect the first plurality of electric contacts to the second plurality of electric contacts.

Disclosed is a pixel array panel for a digital X-ray detector, the pixel array panel including a plurality of pixel regions, wherein the pixel array panel includes: a first electrode corresponding to each pixel region; a plurality of PIN (P-type/I-type/N-type semiconductors) layers disposed on the first electrode and arranged in a matrix form; and a second electrode disposed on each PIN layer.

A detection layer (416) for a radiation detector (400) includes a porous silicon membrane (418). The porous silicon membrane includes silicon (419) with a first side (430) and a second opposing side (432), a plurality of pores (420) extending entirely through the silicon from the first side to the second opposing side, each including shared walls (426), at least one protrusion of silicon (424) protruding out and extending from the first side a distance (504, 604, 704). The porous silicon membrane further includes a plurality of radiation sensitive quantum dots (422) in the pores and a quantum dot layer disposed on the first side and having a surface (434) and a thickness (506, 606, 706), wherein the thickness is greater than the distance.

Provided is a method for producing a quantum dot (QD) film, the method including applying a QD solution on a surface of a base portion to form a QD array, performing cross-linking on the formed QD array, doping QDs included in the QD array by reacting the QDs included in the QD array on which cross-linking is completed with a metal solution including a doping metal, and cleaning the QD array to obtain a QD film including the doped QDs.

Disclosed herein are apparatuses for detecting radiation and methods of making them. The method comprises forming a recess into a semiconductor substrate, wherein a portion of the semiconductor substrate extends into the recess and is surrounded by the recess; depositing semiconductor nanocrystals into the recess, the semiconductor nanocrystals having a different composition from the semiconductor substrate; forming a first doped semiconductor region in the semiconductor substrate; forming a second doped semiconductor region in the semiconductor substrate; wherein the first doped semiconductor region and the second doped semiconductor region form a p-n junction that separates the portion from the rest of the semiconductor substrate.

This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.

A method and apparatus for reducing as-deposited and metastable defects relative to amorphous silicon (a-Si) thin films, its alloys and devices fabricated therefrom that include heating an earth shield positioned around a cathode in a parallel plate plasma chemical vapor deposition chamber to control a temperature of a showerhead in the deposition chamber in the range of 350° C. to 600° C. An anode in the deposition chamber is cooled to maintain a temperature in the range of 50° C. to 450° C. at the substrate that is positioned at the anode. In the apparatus, a heater is embedded within the earth shield and a cooling system is embedded within the anode.

Disclosed herein is an apparatus and a method of making the apparatus. The method comprises obtaining a plurality of semiconductor single crystal chunks. Each of the plurality of semiconductor single crystal chunks may have a first surface and a second surface. The second surface may be opposite to the first surface. The method may further comprise bonding the plurality of semiconductor single crystal chunks by respective first surfaces to a first semiconductor wafer. The plurality of semiconductor single crystal chunks forming a radiation absorption layer. The method may further comprise forming a plurality of electrodes on respective second surfaces of each of the plurality of semiconductor single crystal chunks, depositing pillars on each of the plurality of semiconductor single crystal chunks and bonding the plurality of semiconductor single crystal chunks to a second semiconductor wafer by the pillars.