A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

Provided is a radiation detection element, including: a plurality of electrode portions on a surface of a substrate; and an insulating portion between the electrode portions, the substrate being made of a compound semiconductor crystal containing cadmium telluride or cadmium zinc telluride, wherein an intermediate layer containing tellurium oxide is present between each of the electrode portions and the substrate, and wherein the tellurium oxide layer has a thickness of 100 nm or less on a 500 nm inner side from an end portion of the insulating portion between the electrode portions. The radiation detection element has higher adhesion of the electrodes, and does not result in an element performance defect caused by insufficient insulation between the electrodes, even if the radiation detection element has a narrower distance between the electrode portions in order to obtain a high-definition radiographic image.

Disclosed herein is an apparatus and a method of making the apparatus. The method comprises obtaining a plurality of semiconductor single crystal chunks. Each of the plurality of semiconductor single crystal chunks may have a first surface and a second surface. The second surface may be opposite to the first surface. The method may further comprise bonding the plurality of semiconductor single crystal chunks by respective first surfaces to a first semiconductor wafer. The plurality of semiconductor single crystal chunks forming a radiation absorption layer. The method may further comprise forming a plurality of electrodes on respective second surfaces of each of the plurality of semiconductor single crystal chunks, depositing pillars on each of the plurality of semiconductor single crystal chunks and bonding the plurality of semiconductor single crystal chunks to a second semiconductor wafer by the pillars.

A detection panel and a detection device are provided. The detection panel includes: a base substrate, a photoelectric conversion layer and a first insulating layer which are sequentially stacked on the base substrate; wherein the detection panel further comprises a plurality of interdigital electrodes located on a surface of a side of the first insulating layer away from the base substrate.

An imaging device includes a pixel, the pixel including a photoelectric converter which converts light into a signal charge and a charge detection circuit which detects the signal charge. The photoelectric converter includes a photoelectric conversion layer having a first surface and a second surface opposite to the first surface, a pixel electrode on the first surface, a first electrode adjacent to the pixel electrode on the first surface, the first electrode being electrically conductive to the photoelectric conversion layer, and a counter electrode on the second surface, the counter electrode facing the pixel electrode and the first electrode. A shortest distance between the pixel electrode and the first electrode in a plan view is smaller than a shortest distance between the pixel electrode and the first electrode.

An optical sensor including: a semiconductor layer including a source region and a drain region; a gate electrode facing a region between the source region and the drain region; a photoelectric conversion layer between the region and the gate electrode; and a first transistor having a first gate coupled to one of the source region and the drain region.

Disclosed herein is a system comprising: a first X-ray detector in a first layer; a second X-ray detector in a second layer; wherein the first X-ray detector comprises a first X-ray absorption layer and a first electronics layer; wherein the second X-ray detector comprises a second X-ray absorption layer and a second electronics layer; wherein the first X-ray detector is mounted to a first surface of a first printed circuit board; wherein the second X-ray detector is mounted to a first surface of a second printed circuit board, or to a second surface of the first printed circuit board opposite to the first surface of the first printed circuit board; wherein gaps in the second X-ray absorption layer are shadowed by the first X-ray absorption layer.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

Disclosed herein is an apparatus and a method of making the apparatus. The method comprises obtaining a plurality of semiconductor single crystal chunks. Each of the plurality of semiconductor single crystal chunks may have a first surface and a second surface. The second surface may be opposite to the first surface. The method may further comprise bonding the plurality of semiconductor single crystal chunks by respective first surfaces to a first semiconductor wafer. The plurality of semiconductor single crystal chunks forming a radiation absorption layer. The method may further comprise forming a plurality of electrodes on respective second surfaces of each of the plurality of semiconductor single crystal chunks, depositing pillars on each of the plurality of semiconductor single crystal chunks and bonding the plurality of semiconductor single crystal chunks to a second semiconductor wafer by the pillars.

A method is for producing an integrated circuit. In an embodiment, a metallic contact structure, for a through silicon via with a contact area, is applied onto a silicon substrate without an insulating intermediate layer. An interconnection structure, with at least one insulating layer and at least one interconnection layer, is applied onto the silicon substrate. The contact structure is or will be contacted with the interconnection layer or at least one of the possibly plurality of interconnection layers, and a diode structure for blocking a current flow between the contact area of the metallic contact structure and the silicon substrate is introduced into the silicon substrate.