An optical structure is provided. The optical structure includes an optical element and a plurality of protrusions. The optical element has a planarized top surface. The plurality of protrusions are disposed on the planarized top surface, wherein each of the plurality of protrusions independently has a size in the subwavelength dimensions.

In some embodiments, the present disclosure relates to an image sensor. The image sensor comprises a substrate. A photodetector is in the substrate and includes a semiconductor guard ring extending into a first side of the substrate. A shallow trench isolation (STI) structure extends into the first side of the substrate. An outer isolation structure extends into a second side of the substrate, opposite the first side of the substrate, to the STI structure. The STI structure and the outer isolation structure laterally surround the photodetector. An inner isolation structure extends into the second side of the substrate and overlies the photodetector. The inner isolation structure is vertically separated from the photodetector by the substrate. Further, the outer isolation structure laterally surrounds the inner isolation structure.

A solid-state imaging device that can further improve the quality and reliability of the solid-state imaging device is provided. There is provided a solid-state imaging device including: a sensor substrate having an imaging element that generates a pixel signal in a pixel unit; and at least one chip having a signal processing circuit necessary for signal processing of the pixel signal, wherein the sensor substrate and the at least one chip are electrically connected to and stacked on each other, and wherein a protective film is formed on at least a part of a side surface of the at least one chip, the side surface being connected to a surface of the at least one chip on a side on which the at least one chip is stacked on the sensor substrate.

Provided are an imaging device having more superior optical characteristics, a method of manufacturing the imaging device, and an electronic device at a lower cost. An imaging device according to an embodiment includes: an imaging element (10) including a solid-state imaging element (100) on which a light receiving surface in which light receiving elements are arranged in a two-dimensional lattice shape is formed, and a protection member (101, 102) disposed on a side of the light receiving surface with respect to the solid-state imaging element, in which the imaging element includes a curved portion curved from the light receiving surface of the solid-state imaging element toward a surface on an opposite side of the light receiving surface.

A semiconductor device, a back-side deep trench isolation (BDTI) structure of a semiconductor device, and method of manufacturing a semiconductor structure are provided. The semiconductor device, comprising: a pixel region disposed within a substrate and comprising an image sensing element configured to convert electromagnetic radiation into an electrical signal; and one or more BDTI structures extending from a first-side of the substrate to positions within the substrate; wherein the one or more of BDTI structures comprise one or more ferroelectric materials.

Methods of treating mental disorders, including anxiety disorders such as obsessive-compulsive disorder, are provided. The methods comprise administering an effective amount of a glutamate modulator to an individual in need thereof. Also provided are methods of enhancing the activity of a serotonin reuptake inhibitor (SRI) comprising co-administering a glutamate modulator and a serotonin reuptake inhibitor. Pharmaceutical composition comprising a serotonin reuptake inhibitor and a glutamate modulator are also provided.

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Provided are an image sensor and a manufacturing method thereof. In the image sensor, an insulating layer and a first silicon layer are sequentially on a silicon base. A first isolation structure is in the first silicon layer to define an active area (AA). A doped region is in a part of the first silicon layer in the AA and in a part of the silicon base thereunder. A second silicon layer is in a part of the first silicon layer in the AA and extends into the silicon base. An interconnection structure is on the first silicon layer and electrically connected with a transistor. A second isolation structure is in the silicon base under the first isolation structure and connected to the insulating layer. A passivation layer surrounds the silicon base and is connected to the doped region. A microlens is on the silicon base.

Implementations of image sensor packages may include: an image sensor die including a first largest planar side and a second largest planar side; an optically transmissive cover including a first largest planar side and a second largest planar side where the second largest planar side coupled to the first largest planar side of the image sensor die using an adhesive; and a light block material that fully covers edges of the image sensor die located between the first largest planar side and the second largest planar side of the image sensor die and fully covers edges of the optically transmissive cover between the first largest planar side and the second largest planar side of the optically transmissive cover. The light block material may extend across a portion of the first largest planar side and second largest planar side of the optically transmissive cover.

A reduced cross-talk pixel-array substrate includes a semiconductor substrate, a buffer layer, a metal annulus, and an attenuation layer. The semiconductor substrate includes a first photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the first photodiode region in a cross-sectional plane parallel to a first back-surface region of the back surface above the first photodiode region. The buffer layer is on the back surface and has a feature located above the first photodiode region with the feature being one of a recess and an aperture. The metal annulus is on the buffer layer and covers the trench. The attenuation layer is above the first photodiode region.