The present disclosure relates to a camera package, a manufacturing method of a camera package, and an electronic device capable of reducing a manufacturing cost for forming a lens. The manufacturing method of the camera package according to the present disclosure includes forming a high-contact angle film around a lens forming region on an upper side of a transparent substrate that protects a solid-state imaging element, dropping a lens material in the lens forming region on the upper side of the transparent substrate, and molding the dropped lens material by a mold to form a lens. The present disclosure is applicable to, for example, a camera package and the like in which a lens is arranged above a solid-state imaging element.

A method of fabricating CMOS image sensors is disclosed. In contrast to traditional fabrication processes, the present sequence implants dopants into the epitaxial layer from both the first surface and the second surface. Because dopant is introduced through both sides, the maximum implant energy to perform the implant may be reduced by as much as 50%. In certain embodiments, the second implant is performed prior to the application of the electrical contacts. In another embodiments, the second implant is performed after the application of the electrical contacts. This method may allow deeper photodiodes to be fabricated using currently available semiconductor processing equipment than would otherwise be possible.

There is provided a camera module including a first lens substrate having a light-incident side. The first lens substrate includes a lens disposed at an inner side of a through-hole of the first lens substrate, and a wiring layer disposed at an opposite side of the light-incident side of the first lens substrate. The camera module may include an imaging element including a pixel array disposed at a light-incident side of a substrate, where the imaging element is electrically connected to the wiring layer of the first lens substrate, and where a width of the imaging element in a direction parallel to the light-incident surface of the imaging element is smaller than a width of the first lens substrate in the direction parallel to the light-incident surface of the first lens substrate.

An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

A semiconductor device has a substrate. A semiconductor die with a photosensitive circuit is disposed over the substrate. A lens comprising a protective layer is disposed over the photosensitive circuit. An encapsulant is deposited over the substrate, semiconductor die, and lens. The protective layer is removed after depositing the encapsulant.

The present disclosure relates to an integrated chip. The integrated chip includes a sensor semiconductor layer. The sensor semiconductor layer is doped with a first dopant. A photodetector is along a frontside of the sensor semiconductor layer. A backside semiconductor layer is along a backside of the sensor semiconductor layer, opposite the frontside. The backside semiconductor layer is doped with a second dopant. A diffusion barrier structure is between the sensor semiconductor layer and the backside semiconductor layer. The diffusion barrier structure includes a third dopant different from the first dopant and the second dopant.

The present disclosure is directed to embodiments of sensor package including a doped resin on respective surfaces and sidewalls of a transparent portion, a sensor die, and a support structure extending from the transparent portion to the sensor die. The support structure suspends the transparent portion over a sensor of the sensor die. The doped resin is doped with an additive material, and the additive material is activated by exposing the doped resin to a laser. The doped resin is exposed to the laser forming conductive layers extending along the doped resin for providing electrical connections within the sensor package and to electronic components external to the embodiments of the sensor die packages. The conductive layers are at least partially covered by a non-conductive layer.

To prevent deterioration of light incident/emission environment in a semiconductor device in which a transmissive material is laminated on an optical element forming surface via an adhesive. The semiconductor device includes a semiconductor element manufactured by chip size packaging, a transmissive material which is bonded with an adhesive to cover an optical element forming surface of the semiconductor element, and a side surface protective resin which covers an entire side surface where a layer structure of the semiconductor element and the transmissive material is exposed.

A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.

An imaging element according to the present disclosure is an imaging element flip-chip mounted on a wiring substrate, in which a projection is provided on a side surface of the imaging element such that a bottom surface side of the imaging element projects from a top surface side. Then, in the imaging device according to the present disclosure, the imaging device is flip-chip mounted on the wiring substrate so that a top surface of the imaging element faces the wiring substrate, and an outer periphery of the imaging element on the wiring substrate is sealed with a sealing material. An adhesion site of the sealing material is urged to a side of the projection, so that penetration of a solute and a solvent forming the sealing material may be reduced.