A light receiving device comprises a substrate of a first type on a first electrode, a first region of the first type on the substrate, second regions of the first type arrayed on the first region, and third regions of a second type on the second regions. A first isolation portion is between the adjacent second regions and adjacent third regions. A second isolation portion comprising a metal is embedded the first isolation portions. A fourth region of the second type is on the first region and spaced from the second regions in a second direction with a pair of fifth regions thereon. An insulating film is on the fourth region and the pair of fifth regions. A second electrode is on the insulating film between the pair of fifth regions. The second electrode is comprised of the same metal as the second isolation portion.

The present invention disclosures an image sensor structure and a formation method thereof, wherein comprising: a pixel unit array, a peripheral circuit set at the periphery of the pixel unit array, and a composite shield structure around the pixel unit array and between the pixel unit array and the peripheral circuit, the composite shield structure comprises a light shield structure and a heat shield structure; wherein, the light shield structure comprises a metal isolation structure around the pixel unit array for isolating light emitted by the peripheral circuit, and the heat shield structure comprises a cavity set inside the metal isolation structure, the cavity is filled with a thermal isolation medium for preventing heat transfer to the pixel unit array. The present invention can avoid image quality deterioration and distortion caused by light and heat of the peripheral circuit of the image sensor.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

Image sensors may include a semiconductor substrate including a first surface and a second surface opposite the first surface and including a plurality of pixels, a first pixel isolation structure including a first trench recessed from the first surface of the semiconductor substrate into the semiconductor substrate and a conductive layer in the first trench, and a second pixel isolation structure including a second trench and a third trench each recessed from the second surface of the semiconductor substrate into the semiconductor substrate and a dielectric layer in the second trench and the third trench. The first pixel isolation structure and the second pixel isolation structure may contact each other and separate the pixels from each other in the semiconductor substrate.

The present disclosure provides a semiconductor structure and a method for fabricating a semiconductor structure, wherein the semiconductor structure includes a device layer, including a terminal region and a pixel region adjacent to the terminal region, a conductive pad in the terminal region, and an isolation structure in the pixel region, wherein the isolation structure includes a first conductive material.

Image sensing devices according to present disclosure include metal gate structures in a pixel device. Particularly, the metal gate structures include a ferroelectric layer and a conductive layer to form a negative capacitance device in the gate stack. As a result, the transistors in the pixel device have reduced threshold swing, improved gain and reduced threshold voltage shift. The pixel device according to the present disclosure includes a combination of metal gate and polycrystalline gate, which provides flexibility in pixel device design and improves performance.

Disclosed are an object of the present disclosure is to provide a solid-state imaging apparatus, a method of manufacturing a solid-state imaging apparatus, and an electronic device, which are capable of realizing superior low illuminance PDAF performance and superior light shielding performance at the same time, and which are capable of realizing higher-accuracy image quality. The pixel portion 20 is divided into a central region RCTR and a peripheral region RPRP, and in all of the pixel units PUP in the peripheral region RPRP, the number NP of same-color pixels PX which a microlens MCL is responsible for making light incident thereon is 2. The number NP is less than the number NC of same-color pixels PX in which a microlens MCL is responsible for making light incident thereon in the pixel unit PUC in the central region RCTR, which is 4. Moreover, the microlens MCL adopted in the central region RCTR and the microlens MCL adopted in the peripheral region RPRP have the same shape.

In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.

An image sensor device includes a transistor disposed in a pixel region; a salicide block layer covering the pixel region; a first ILD layer covering the salicide block layer; a second ILD layer on the first ILD layer; a source contacts extending through the second and first ILD layers and the salicide block layer, and including first polysilicon plug in the first ILD layer, first self-aligned silicide layer on the polysilicon plug and first conductive metal layer on the first self-aligned silicide layer; and a drain contact extending through the second and first ILD layers and the salicide block, and including second polysilicon plug in first ILD layer, second self-aligned silicide layer on the second polysilicon plug, and second conductive metal layer on the second self-aligned silicide layer.

A photosensitive sensor includes a pixel formed by a photosensitive region in a first semiconductor material, a read region in a second semiconductor material, and a transfer gate facing the parts of the first semiconductor material and the second semiconductor material located between the photosensitive region and the read region. The first semiconductor material and the second semiconductor material have different band gaps and are in contact with one another to form a heterojunction facing the transfer gate.