Provided is a field shaping multi-well detector and method of fabrication thereof. The detector is configured by depositing a pixel electrode on a substrate, depositing a first dielectric layer, depositing a first conductive grid electrode layer on the first dielectric layer, depositing a second dielectric layer on the first conductive grid electrode layer, depositing a second conductive grid electrode layer on the second dielectric layer, depositing a third dielectric layer on the second conductive grid electrode layer, depositing an etch mask on the third dielectric layer. Two pillars are formed by etching the third dielectric layer, the second conductive grid electrode layer, the second dielectric layer, the first conductive grid electrode layer, and the first dielectric layer. A well between the two pillars is formed by etching to the pixel electrode, without etching the pixel electrode, and the well is filled with a-Se.

An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

An imaging device includes a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked. In the imaging device, an inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer. The inorganic oxide semiconductor material layer contains zinc (Zn) atoms and tin (Sn) atoms, and, when expressed by Zn.sub.aSn.sub.bO.sub.c, satisfies the following conditions: a+b+c=1.00, and b>a.

A highly sensitive imaging device that can perform imaging even under a low illuminance condition is provided. One electrode of a photoelectric conversion element is electrically connected to one of a source electrode and a drain electrode of a first transistor and one of a source electrode and a drain electrode of a third transistor. The other of the source electrode and the drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor. The other electrode of the photoelectric conversion element is electrically connected to a first wiring. A gate electrode of the first transistor is electrically connected to a second wiring. When a potential supplied to the first wiring is HVDD, the highest value of a potential supplied to the second wiring is lower than HVDD.

Disclosed herein is a method comprising: attaching a plurality of chips to a substrate, wherein each of the chips comprises only one pixel configured to detect radiation. Disclosed herein is a method comprising: attaching a wafer to a substrate, wherein the substrate comprises discrete electrodes, wherein the wafer comprises a radiation absorption layer and a plurality of electrical contacts, wherein each of the electrical contacts is connected to at least one of the discrete electrodes; identifying a defective area of the wafer; replacing a portion of the wafer with a chip configured to absorb radiation, the portion comprising the defective area.

A device and process in which a single continuous depositional layer of a polycrystalline photoactive material is deposited on an integrated charge storage, amplification, and readout circuit with an irregular surface wherein the polycrystalline photoactive material is comprised of a II-VI semiconductor compound or alloys of II-VI compounds.

A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiO.sub.x, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.

A curved FPA comprises an array of detectors, with mesas etched between the detectors such that they are electrically and physically isolated from each other. Metallization deposited at the bottom of the mesas reconnects the detectors electrically and thereby provides a common ground between them. Strain induced by bending the FPA into a curved shape is across the metallization and any backfill epoxy, rather than across the detectors. Indium bumps are evaporated onto respective detectors for connection to a readout integrated circuit (ROIC). An ROIC coupled to the detectors is preferably thinned, and the backside of the ROIC may also include mesas such that the ROIC is reticulated.

According to an embodiment, a method comprises: configuring a panel plate as an entrance window for high energy electromagnetic, for example x-ray or gamma ray, radiation; attaching a bias plate on the panel plate, wherein the bias plate is configured to conduct electricity and pass the radiation through it; and attaching an array of tiles, where in each tiles comprises a direct conversion compound semiconductor sensor and a readout integrated circuit, IC, layer on the bias plate so that the direct conversion compound semiconductor sensor is configured on the bias plate; wherein the direct conversion compound semiconductor sensor is configured to convert photons of the high energy electromagnetic, for example x-ray or gamma ray, radiation into an electric current; and wherein the readout IC layer is situated next to the direct conversion compound semiconductor sensor and configured to receive the electric current and process the electric current. Other embodiments relate to a detector comprising an array of assemblies, and an imaging system comprising: an x-ray source and the detector.

A photosensitive field-effect transistor which can be configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor. The field-effect transistor has a channel (13) made from a two-dimensional material and comprises a photoactive layer (22) which can be configured to donate charge carriers to the transistor channel (13) when electromagnetic radiation is absorbed in the photoactive layer (22). The photosensitive field-effect transistor comprises a top electrode (21) which is in contact with the photoactive layer on one or more contact areas which together form a contact pattern. With a suitably patterned top electrode (21), a voltage applied to the electrode can function as an electrical shutter which can switch the photosensitive field-effect transistor between a light-sensitive state and a light-immune state.