An imaging device includes a semiconductor substrate and a pixel. The semiconductor substrate includes first and second surfaces that oppose each other, a first region containing an impurity of a first conductivity type, a second region that contains an impurity of a second conductivity type and that is closer to the first surface than the first region is, a third region that contains an impurity of the first conductivity type and that is closer to the first surface than the second region is, and a fourth region that provides connection between the first and third regions and that contains an impurity of the first conductivity type. The pixel includes a photoelectric converter, and a first diffusion region that is electrically connected to the photoelectric converter, that is located in the third region, that is exposed at the first surface, and that overlaps the entire first diffusion region in plan view.

An intra-oral dental radiological image sensor is mechanically reinforced by two front R.sub.A and rear R.sub.B mechanical reinforcing plates each inserted between a respective face of an image capture module and a respective front 20A and rear 20B shell bottom of a casing. The front reinforcing plate is a solid plate, made of material transparent to X rays, covering the photosensitive front face (scintillator) of the module, and harder than the front shell. The rear plate, less thick than the front plate, is harder than the rear shell and comprises an opening O provided to surround, without covering them, components present on the rear face of the module, under a rear shell dome.

An imaging device includes a semiconductor substrate and a pixel. The semiconductor substrate includes first and second surfaces that oppose each other, a first region containing an impurity of a first conductivity type, a second region that contains an impurity of a second conductivity type and that is closer to the first surface than the first region is, a third region that contains an impurity of the first conductivity type and that is closer to the first surface than the second region is, and a fourth region that provides connection between the first and third regions and that contains an impurity of the first conductivity type. The pixel includes a photoelectric converter, and a first diffusion region that is electrically connected to the photoelectric converter, that is located in the third region, that is exposed at the first surface, and that overlaps the entire first diffusion region in plan view.

An imaging device includes a semiconductor substrate, pixels, a charge detector, charge storage portions, an output gate portion and a shift gate portion. The pixels and the charge detector are provided in the semiconductor substrate. The charge storage portions are provided on the charge detector side of the pixels, and linked to the pixels. The output gate portion is positioned between the charge detector and the charge storage portions, and includes charge transfer channels extending in a radial configuration in directions from the charge detector toward the pixels. The shift gate portion is positioned between one charge storage portion and one charge transfer channel. The shift gate portion includes a gate electrode provided on the semiconductor substrate. A planar configuration of the gate electrode has a side orthogonal to the extending direction of the one charge transfer channels, the side being most proximal to the one charge transfer channel.

Implementations of image sensors may include a passivation layer coupled over a silicon layer, a color-filter-array coupled over the passivation layer, a lens coupled over the color-filter-array, and at least two optically transmissive charge dissipation layers coupled over the silicon layer.

An imaging device may have an array of image sensor pixels each having a photodiode and a floating diffusion node. Each image sensor pixel in the array may also include a dual conversion gain switch and a dual conversion gain capacitor that allows the image sensor pixel to operate in a low conversion gain mode during which the switch is turned on to share charge between the floating diffusion node and the dual conversion gain capacitor, and a high conversion gain mode in which the switch is turned off. During integration, the photodiode may generate more charge than can be held at the floating diffusion node. A buried channel may be provided beneath the dual conversion gain switch to provide a path along which the excess charge can be shared between the floating diffusion node and the dual conversion gain capacitor even when the dual conversion gain switch is off.

A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

Provided a semiconductor light detection element including: a semiconductor portion having a front surface including a light reception region that receives incident light and photoelectrically converting the incident light incident on the light reception region; a metal portion provided on the front surface; and a carbon nanotube film provided on the light reception region and formed by depositing a plurality of carbon nanotubes. The carbon nanotube film extends over an upper surface of the metal portion from an upper surface of the light reception region.

A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.