Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region

A radiographic image capturing device includes: plural radiation dose detection pixels that respectively output signal values according to a dose of irradiated radiation; a determination unit that determines a presence or absence of defects, block-by-block, based on signal values of radiation dose detection pixels included in each of plural blocks, which are arranged such that the respective blocks include at least a portion of the plural radiation dose detection pixels; a block rearrangement unit that performs block rearrangement to change the arrangement of the plural blocks according to a determination result of the determination unit; and a detection unit that detects a dose of irradiated radiation based on signal values of each arranged block or of each rearranged block.

An imaging apparatus capable of obtaining a focus detection result from a focus detection area in which an object is more appropriately captured during focus detection using a signal from an image sensor is provided. The imaging apparatus includes an image sensor configured to periodically capture an image, the image sensor including a plurality of pixels each including a plurality of photoelectric conversion units with respect to a microlens, a setting unit configured to set a plurality of focus detection areas, wherein each of the plurality of focus detection areas corresponds to respective areas of the image sensor. The setting unit is configured to provide a plurality of division patterns for forming a plurality of focus detection areas, and switch the division patterns each time an image is captured by the image sensor.

A high-accurate imaging increased in time resolution can be made. The camera device is provided with a plurality of pixels that include a light-receiving surface embedded region to convert incident light into charges, a charge accumulation region to accumulate the charges, and a gate electrode to control the charges to be transferred from the light-receiving surface embedded region to the charge accumulation region, and are one-dimensionally arranged in each of a plurality of columns, a timing generation circuit which generates a control pulse voltage to be applied to the gate electrode, and a correction circuit unit which is provided in accordance with each of a plurality of columns of the pixels, delays the control pulse voltage in a variable time, and applies the control pulse voltage to the gate electrodes of the plurality of pixels belonging to a column corresponding to the control pulse voltage.

Provided is a solid-state imaging device that includes: a first pixel provided with a color filter layer having a transmission band in a visible light wavelength region on a light-receiving surface of a first light-receiving element; a second pixel provided with an infrared pass filter layer having a transmission band in an infrared wavelength region on a light-receiving surface of a second light-receiving element; an infrared cut filter layer that is provided on a position overlapping with the color filter layer and transmits light in the visible light wavelength region by blocking light in the infrared wavelength region; and a cured film provided in contact with the infrared cut filter layer.

Provided is a solid-state imaging device that includes: first pixels provided with a color filter layer having a transmission band in a visible light wavelength region on a light-receiving surface of a first light-receiving element; second pixels provided with an infrared pass filter layer having a transmission band in an infrared wavelength region on a light-receiving surface of a second light-receiving element; and an infrared cut filter layer that is provided on a lower surface side of the color filter layer and transmits light in the visible light wavelength region by blocking light in the infrared wavelength region; wherein the infrared cut filter layer is formed with an infrared-absorbing composition containing a compound having a maximum absorption wavelength in an wavelength range of from 600 to 2000 nm, and at least one kind selected from a binder resin and a polymerizable compound.

Example embodiments relate to image sensors for time delay and integration imaging and methods for imaging using an array of photo-sensitive elements. One example image sensor for time delay and integration imaging includes an array of photo-sensitive elements that includes a plurality of photo-sensitive elements arranged in rows and columns of the array. Each photo-sensitive element includes an active layer configured to generate charges in response o incident light on the active layer. Each photo-sensitive element also includes a charge transport layer. Further, each photo-sensitive element includes at least a first and a second gate, each separated by a dielectric material from the charge transport layer. The array of photo-sensitive elements is configured such that the second gate of a first photo-sensitive element and the first gate of a second photo-sensitive element in a direction along a column of the array are configured to control transfer of charges.

A solid-state imaging apparatus 100a comprises: photoelectric conversion elements PD1 and PD2 formed within a first conductivity type semiconductor substrate 100; and transfer transistors Tt1 and Tt2 formed on a first main surface of the semiconductor substrate 100, for transferring the signal charge generated by the photoelectric conversion elements outside the photoelectric conversion elements. The gate electrode 107 of each of the transfer transistors is configured to be disposed over a surface of a first main surface side of an electric charge accumulating region 102, which configures each of the photoelectric conversion elements PD1 and PD2. As a result, a high-resolution image can be achieved, in which noises and afterimages are further suppressed.

An X-ray device includes a C-bracket having a radiation detector rotatably mounted on the C-bracket. The radiation detector may be rotated by a motor drive. The axis of rotation is perpendicular to the detector surface. The motor drive is a torque motor that includes a stator and a rotor. The radiation detector is coupled to the rotor.

A solid-state imaging device includes a light receiving section formed by such exposure as to stitch a plurality of patterns in a first direction on a semiconductor substrate. The light receiving section includes a plurality of pixels disposed in a two-dimensional array in the first direction and a second direction perpendicular to the first direction. Electric charges are transferred in the second direction in each of pixel columns consisting of a plurality of pixels disposed in the second direction, among the plurality of pixels.