A semiconductor device in which a first chip and a second chip are stacked including a first wiring line and a second wiring line by which the first chip and the second chip are electrically connected. The first wiring line and the second wiring line each include a bonding portion for bonding one of a plurality of conductive patterns placed in the first chip and one of a plurality of conductive patterns placed in the second chip. The number of bonding portions included in the first wiring line is larger than the number of bonding portions included in the second wiring line.

Provided are an image sensor with one or more image receivers for image switching, and an imaging system and method therefor. The image sensor includes an image sensor array to generate first image data for a first image; a receiver to receive, into the image sensor, second image data for a second image; an image selection circuit coupled to the image sensor array and the receiver to receive the first image data and the second image data and select one of the first image data and the second image data according to one or more image selection criteria and at least one of the first image data and the second image data; and a transmitter coupled to the image selection circuit to transmit the selected one of the first image data and the second image data from the image sensor.

Provided a semiconductor light detection element including: a semiconductor portion having a front surface including a light reception region that receives incident light and photoelectrically converting the incident light incident on the light reception region; a metal portion provided on the front surface; and a carbon nanotube film provided on the light reception region and formed by depositing a plurality of carbon nanotubes. The carbon nanotube film extends over an upper surface of the metal portion from an upper surface of the light reception region.

A system and method interpret optical characterization examinations performed with a set of optical devices. Each device comprises one or more arrays of optical metasurface structures and have arrays tailored to have distinct properties making them differ from one another. First data and second data are accessed that capture a physical fingerprint of each device and an outcome of an optical characterization examination performed with each device, respectively. The outcomes of examinations performed are impacted by the respective, distinct properties of the arrays. Each device is identified based on the first data accessed, which makes it possible to obtain a readout key associated with the identified device. This readout key accounts for the respective one of the distinct properties. Finally, the second data are interpreted according to the readout key obtained to elucidate the outcome of the optical characterization examination. The invention is further directed to related computer program products.

A multiplier has a pair of charge reservoirs. The pair of charge reservoirs are connected in series. A first charge movement device induces charge movement to or from the pair of charge reservoirs at a same rate. A second charge movement device induces charge movement to or from one of the pair of reservoirs, the rate of charge movement programmed to one of add or remove charges at a rate proportional to the first charge movement device. The first charge movement device loads a first charge into a first of the pair of charge reservoirs during a first cycle. The first charge movement device and the second charge movement device remove charges at a proportional rate from the pair of charge reservoirs during a second cycle until the first of the pair of charge reservoirs is depleted of the first charge. The second charge reservoir thereafter holding the multiplied result.

An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes, plural transfer MOSFETs arranged corresponding to the plural photodiodes, respectively, and a common MOSFET which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Provided are an image sensor with one or more image receivers for image switching, and an imaging system and method therefor. The image sensor includes an image sensor array to generate first image data for a first image; a receiver to receive, into the image sensor, second image data for a second image; an image selection circuit coupled to the image sensor array and the receiver to receive the first image data and the second image data and select one of the first image data and the second image data according to one or more image selection criteria and at least one of the first image data and the second image data; and a transmitter coupled to the image selection circuit to transmit the selected one of the first image data and the second image data from the image sensor.

A system and method interpret optical characterization examinations performed with a set of optical devices. Each device comprises one or more arrays of optical metasurface structures and have arrays tailored to have distinct properties making them differ from one another. First data and second data are accessed that capture a physical fingerprint of each device and an outcome of an optical characterization examination performed with each device, respectively. The outcomes of examinations performed are impacted by the respective, distinct properties of the arrays. Each device is identified based on the first data accessed, which makes it possible to obtain a readout key associated with the identified device. This readout key accounts for the respective one of the distinct properties. Finally, the second data are interpreted according to the readout key obtained to elucidate the outcome of the optical characterization examination. The invention is further directed to related computer program products.

The present disclosure relates to a solid-state image pickup device, a manufacturing method, and an electronic apparatus, which can obtain high charge transfer efficiency from a photoelectric conversion unit to a floating diffusion layer. The floating diffusion layer is arranged in a rectangular shape so as to surround a gate electrode of a vertical transistor whose groove portion is rectangular. A reset drain is formed so as to be adjacent to the floating diffusion layer through a reset gate. A potential of the floating diffusion layer is reset to the same potential as that of the reset drain by applying a predetermined voltage to the reset gate. It is possible to apply the present disclosure to, for example, a CMOS solid-state image pickup device used in an image pickup device such as a camera.

An organic light emitting diode (OLED) display device is provided. The OLED display device includes a display panel and a camera. A first alignment mark is formed on a low pixel density area of the display panel, a second alignment mark is formed in the camera, and arrangements of the first alignment mark and the second alignment mark are consistent. Therefore, an alignment accuracy between the camera and the display panel is improved, and a purpose of adopting a blind hole in the area where the camera is mounted on the display device and displaying normally is achieved.