A pixel circuit, a method for performing a pixel-level background light subtraction, and an imaging device are disclosed. In one example of the present disclosure, the pixel circuit includes an overflow gate transistor, a photodiode, and two taps. Each tap of the two taps is configured to store a background signal that is integrated by the photodiode, subtract the background signal from a floating diffusion, store a combined signal that is integrated by the photodiode at the floating diffusion, and generate a demodulated signal based on a subtraction of the background signal from the floating diffusion and a storage of the combined signal that is integrated at the floating diffusion.

An image sensor is provided to include an active region which comprises: a floating diffusion region; a transfer transistor gate region; transistor active regions; and a well-tap region. The transfer transistor gate region may have a diagonal bar shape to isolate the floating diffusion region in a first corner of the active region. The well-tap region may be positioned between the transfer transistor gate region and the transistor active regions, and isolate the transfer transistor gate region from the transistor active regions.

A back-illuminated energy ray detecting element 1 includes a semiconductor substrate and a protective film. The semiconductor substrate has a first principal surface as an energy ray incident surface and a second principal surface opposite to the first principal surface, and a charge generating region configured to generate an electric charge according to incidence of an energy ray is disposed on the second principal surface side. The protective film is disposed on the second principal surface side of the semiconductor substrate to cover at least the charge generating region, and includes silicon nitride or silicon nitride oxide. The protective film has a stress alleviating section configured to alleviate stress generated in the protective film.

Various embodiments of the present technology may comprise methods and apparatus for an image sensor capable of simultaneous integration of electrons and holes. According to an exemplary embodiment, the image sensor comprises a backside-illuminated hybrid bonded stacked chip image senor comprising a pixel circuit array, and each pixel circuit comprising a charge storage capacitor oriented in a vertical direction in a deep trench isolation region. Both the electrons and holes are integrated (collected) using a global shutter operation, and the charge storage capacitor is used for storing a signal generated by the holes.

A distance-measuring imaging device includes: a drive controller that outputs a light emission signal and an exposure signal; a light source; a solid-state imager that performs exposure to reflected light; and a TOF calculator that calculates a distance to an object using an imaging signal. The drive controller: cyclically outputs a first exposure signal group in which, before an exposure period of one exposure signal ends, an exposure period of at least one other exposure signal starts; and outputs a second exposure signal group having a dead zone period during which all exposure signals are in a non-exposure period. The TOF calculator calculates a first distance value using a first imaging signal obtained according to the first exposure signal group, calculates a second distance value using a second imaging signal obtained according to the second exposure signal group, and calculates the distance based on the first and second distance values.

The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

An image sensor includes a substrate having a first surface and a second surface that are opposite to each other. The substrate including a plurality of unit pixel regions having photoelectric conversion regions and floating diffusion regions disposed adjacent to the first surface. A pixel isolation pattern is disposed in the substrate and is configured to define the plurality of unit pixel regions. An interconnection layer is disposed on the first surface of the substrate. The interconnection layer includes a conductive structure having a connection portion that extends parallel to the first surface of the substrate and is spaced apart from the first surface of the substrate. Contacts extend vertically from the connection portion towards the first surface of the substrate. Each of the contacts are spaced apart from each other with the pixel isolation pattern interposed therebetween. The contacts are coupled to the floating diffusion regions, respectively.

Disclosed is an image sensor, comprising: at least one photosensitive unit, where the photosensitive unit includes a main photosensitive region and an auxiliary photosensitive region arranged at the periphery of the main photosensitive region, and a photosensitive component content of the main photosensitive region is different from a photosensitive component content of the auxiliary photosensitive region. The disclosure enlarges a wavelength range of sensible light of each the photosensitive unit by arranging the auxiliary photosensitive region at the periphery of the main photosensitive region of the photosensitive unit, where the photosensitive component content of the main photosensitive region is different from that of the auxiliary photosensitive region. Thereby more image details may be recorded to generate images with high dynamic range, which enables people to experience a visual effect close to a real environment.

A first region includes a plurality of first transfer column regions distributed in a first direction. A second region includes a plurality of second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction in the second transfer section. Lengths in a second direction of the plurality of first transfer column regions are equal. Lengths in the second direction of the plurality of second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region in the second direction increases in the charge transfer direction in response to a change in the lengths of the plurality of second transfer column regions.

An uneven-trench pixel cell includes a semiconductor substrate that includes a floating diffusion region, a photodiode region, and, between a front surface and a back surface: a first sidewall surface, a shallow bottom surface, a second sidewall surface, and a deep bottom surface. The first sidewall surface and a shallow bottom surface define a shallow trench, located between the floating diffusion region and the photodiode region, that extends into the semiconductor substrate from the front surface. A shallow depth of the shallow trench exceeds a junction depth of the floating diffusion region. The second sidewall surface and a deep bottom surface define a deep trench, located between the floating diffusion region and the photodiode region, that extends into the semiconductor substrate from the front surface. A distance between the deep bottom surface and the front surface defines a deep depth, of the deep trench, that exceeds the shallow depth.