Methods of measuring and calibrating the gain of a CCD imaging system are described. Charge injectors may be present on either side of an image sensor array that provide test charges to respective calibration VCCDs. Test charges may be transferred to upper and lower HCCDs during quad-output read out or to only the lower HCCD during dual-output or single-output read out. In each quadrant of the imaging system, test charges may be transferred to an EMCCD output or to a non-EMCCD output via a charge switch based on the magnitude of the test charges. The gains of all EMCCD outputs and non-EMCCD outputs in the imaging system may be calibrated against one another by adjusting the gain at each output when a discrepancy is detected between any two outputs.

A photo-detector includes a detection region for collecting minority carriers in a substrate, first and second field generating regions generating a majority carrier current to move the minority carriers towards the detection region, and a blocking region spaced apart from the detection region to block a leakage current. The photo-detector includes a ground region spaced apart from the detection region, and the blocking region is disposed between the detection region and the ground region.

An intraoral x-ray imaging sensor includes an electronic interface substrate which has a first surface and a second surface and is substantially rectangular with a mesial end and a distal end and a semiconductor imager which is mechanically and electrically coupled to the electronic interface substrate and which has a first surface and a second surface. The semiconductor imager consists of a silicon layer having an array of detector elements formed on its the first surface and is substantially rectangular with a mesial end and a distal end. The electronic interface substrate and the semiconductor imager have a first cut corner and a second cut corner at its the distal end. The second surface of the semiconductor imager is disposed adjacent and contiguous to the first surface of the electronic interface substrate. The intraoral x-ray imaging sensor also includes a plurality of first electrical pads, a plurality of second electrical pads and a plurality of bond wires. The first electrical pads are disposed on the first surface of the electronic interface substrate wherein some of the first electrical pads are disposed adjacent and contiguous to the first cut corner and the remainder of the first electrical pads are disposed adjacent and contiguous to the second cut corner. The second electrical pads are disposed on the first surface of the semiconductor imager wherein some of the of second electrical pads are disposed adjacent and contiguous to the first cut corner and the remainder of the second electrical pads are disposed adjacent and contiguous to the second cut corner. Each bond wire electrically couples one of the first electrical pads to one of the second electrical pads.

A solid-state image sensor is provided. The solid-state image sensor comprises a pixel region including a photoelectric conversion unit formed in a substrate. A first silicon nitride layer is arranged to cover at least part of the photoelectric conversion unit, and a concentration of chlorine contained in the first silicon nitride layer falls within a range of 1 atomic % to 3 atomic %.

A solid-state imaging unit includes: a pixel section including a plurality of pixels each including a photoelectric conversion section, a charge-voltage conversion section, and a transfer transistor transferring charge accumulated in the photoelectric conversion section to the charge-voltage conversion section; and a storage section storing information about an optimum value of an intermediate voltage to be applied to a gate of the transfer transistor at time of an intermediate transfer operation when a signal charge accumulated in the photoelectric conversion section is divided to be read in a predetermined times of the intermediate transfer operations and a complete transfer operation.

An image sensor is provided. The image sensor includes a first pixel region and a second pixel region located within a semiconductor substrate, a first isolation layer surrounding the first pixel region and the second pixel region, a second isolation layer located between the first pixel region and the second pixel region, and a microlens arranged on the first pixel region and the second pixel region. Each of the first pixel region and the second pixel region include a photoelectric conversion device. The second isolation layer includes at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

An image sensor includes a plurality of pixels each including: a first and a second photoelectric conversion unit that perform photoelectric conversion upon light that has passed through a micro lens and generates a charge; a first accumulation unit that accumulates the charge generated by the first conversion unit; a second accumulation unit that accumulates the charge generated by the second conversion unit; a third accumulation unit that accumulates the charges generated by the first and second conversion units; a first transfer unit that transfers the charge generated by the first conversion unit to the first accumulation unit; a second transfer unit that transfers the charge generated by the second onversion unit to the second accumulation unit; and a third transfer unit that transfers the charges generated by the first and second conversion units to the third accumulation unit.