A pixel array within an integrated-circuit image sensor includes four sets of photodetection elements disposed in respective pixel-array regions having a shared corner, four readout circuits each coupled to a respective one of the four sets of photodetection elements, a reset node, a reset transistor, and binning transistors. Each of the four readout circuits has a floating diffusion node, a first transfer gate coupled between the floating diffusion node and a constituent photodetection element of the respective one of the four sets of photodetection elements, and an amplifier transistor having a gate terminal coupled to the floating diffusion node. The reset transistor is coupled between the reset node and a reset-voltage supply, and each one of the binning transistors is coupled between the reset node and the floating diffusion node of a respective one of the readout circuits.

An image sensor includes a pixel array including a plurality of pixel groups, each of the plurality of pixel groups including a plurality of unit pixels and sharing a single microlens, the plurality of unit pixels in each of the plurality of pixel groups including color filters of the same color, and a control logic configured to group the plurality of unit pixels of each of the plurality of pixel groups into a plurality of subgroups and to drive the pixel array for each subgroup. The plurality of subgroups include a first subgroup and a second subgroup. The control logic may be configured to obtain first image data corresponding to the first subgroup and second image data corresponding to the second subgroup, and the first subgroup and the second subgroup are provided with at least one unit pixel therebetween in the first direction or the second direction.

An image sensing device includes a substrate including a back side structured to receive incident light and a front side opposite to the back side; imaging pixels to receive the incident light from the back side and each imaging pixel structured to produce photocharge in response to received incident light; a plurality of conductive contact structures configured to generate a potential gradient in the substrate and to capture photocharges that are generated in response to the incident light and move by the potential gradient; and a well region disposed between the plurality of conductive contact structures.

An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

A time-of-flight sensor includes a pixel array of pixel circuits. A first subset of the pixel circuits is illuminated by reflected modulated light from a portion of an object. A second subset of the pixel circuits is non-illuminated by the reflected modulated light. Each pixel circuit includes a floating diffusion that stores a portion of charge photogenerated in a photodiode in response to the reflected modulated light. A transfer transistor transfers the portion of charge from the photodiode to the floating diffusion in response to modulation by a phase modulation signal. A modulation driver block generates the phase modulation signal and is coupled to a light source that emits the modulated light to the portion of the object. The modulation driver block synchronizes scanning the modulated light emitted by the light source across the object with scanning of the first subset of the pixel circuits across the pixel array.

An image sensing device includes a substrate structured to include a first surface on a first side of the substrate and a second surface on a second side of the substrate opposite to the first side and to further include a first active region and a second active region in a portion of the substrate near the second surface, at least one photoelectric conversion element formed in the substrate, and structured to generate photocharges by performing photoelectric conversion of incident light received through the first surface of the substrate, a floating diffusion region formed near the second surface of the substrate, and structured to receive the photocharges from the photoelectric conversion element and temporarily store the received photocharges, a transistor formed in the first active region, and structured to include a first source/drain region coupled to the floating diffusion region, and a well pickup region formed in the second active region, and structured to apply a bias voltage to the substrate. The first source/drain region and the well pickup region have complementary conductivities and are formed to be in contact with each other.

A pixel array includes pixel cells, each including photodiodes. A source follower is coupled to generate an image signal in response image charge generated by the photodiodes. A first row select transistor is coupled to the source follower to output the image signal of the pixel cell. Pixel cells are organized into columns including a first column and a second column. The first row select transistors of the pixel cells of the first and second columns of pixel cells are coupled to first and second column bitlines, respectively. The pixel cells of the second column of pixel cells further include a second row select transistor coupled to the source follower to output the respective image signal to the first column bitline.

An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

It is an object of the present technology to provide a solid-state image sensor capable of reducing display unevenness of a captured image. A solid-state image sensor includes: a first substrate that includes a photoelectric conversion unit, a transfer gate unit that is connected to the photoelectric conversion unit, an FD unit that is connected to the transfer gate unit, and an interlayer insulating film that covers the photoelectric conversion unit, the transfer gate unit, and the FD unit; and a second substrate that includes an amplifier transistor and is disposed to be adjacent to the interlayer insulating film, the amplifier transistor constituting a part of a pixel transistor connected to the FD unit via the interlayer insulating film and including a back gate unit.

The present disclosure relates to a solid-state imaging element and an electronic device capable of increasing the capacitance of a charge holding unit. The solid-state imaging element includes a pixel including a photodiode, an FD that accumulates charges generated in the photodiode, and a charge holding unit that is connected in parallel with the FD. The charge holding unit includes a wiring capacitance formed by parallel running of a first wiring connected to a first potential and a second wiring connected to a second potential different from the first potential. The present disclosure can be applied to a solid-state imaging element that performs global shutter type imaging.