A single-exposure high dynamic range (HDR) image sensor includes a first photodiode and a second photodiode, with a smaller full-well capacity than the first photodiode, disposed in a semiconductor material. The image sensor also includes a first floating diffusion disposed in the semiconductor material and a first transfer gate coupled to the first photodiode to transfer first image charge accumulated in the first photodiode into the first floating diffusion. A second floating diffusion is disposed in the semiconductor material and a second transfer gate is coupled to the second photodiode to transfer second image charge accumulated in the second photodiode into the second floating diffusion. An attenuation layer is disposed between the second photodiode and image light directed towards the single-exposure HDR image sensor to block a portion of the image light from reaching the second photodiode.

Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.

An imaging processing device and an imaging processing method that can solve a problem generated in visible light photographing in a case where DBPF is used instead of an infrared cut filter. An imaging sensor includes a color filter, and DBPH that has a transmission characteristic in a visible-light band, blocking characteristic in a first wavelength band adjacent to a long-wavelength side of the visible-light band, and transmission characteristic in a second wavelength band that is a part of the first wavelength band. A signal processing unit subtracts an infrared signal, which is output from an infrared pixel, from each color signal output from a pixel in each color of visible light in the imaging sensor. Here, in a case where each color signal reaches a pixel saturation level, control of performing correction in such a manner that an infrared signal subtracted from each color signal is lowered is performed.

An optical sensor device may include a set of optical sensors. The optical sensor device may include a substrate. The optical sensor device may include a multispectral filter array disposed on the substrate. The multispectral filter array may include a first dielectric mirror disposed on the substrate. The multispectral filter array may include a spacer disposed on the first dielectric mirror. The spacer may include a set of layers. The multispectral filter array may include a second dielectric mirror disposed on the spacer. The second dielectric mirror may be aligned with two or more sensor elements of a set of sensor elements.

A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

An imaging processing device and an imaging processing method that can solve a problem generated in visible light photographing in a case where DBPF is used instead of an infrared cut filter. An imaging sensor includes a color filter, and DBPH that has a transmission characteristic in a visible-light band, blocking characteristic in a first wavelength band adjacent to a long-wavelength side of the visible-light band, and transmission characteristic in a second wavelength band that is a part of the first wavelength band. A signal processing unit subtracts an infrared signal, which is output from an infrared pixel, from each color signal output from a pixel in each color of visible light in the imaging sensor. Here, in a case where each color signal reaches a pixel saturation level, control of performing correction in such a manner that an infrared signal subtracted from each color signal is lowered is performed.

An optical sensor device may include a set of optical sensors. The optical sensor device may include a substrate. The optical sensor device may include a multispectral filter array disposed on the substrate. The multispectral filter array may include a first dielectric mirror disposed on the substrate. The multispectral filter array may include a spacer disposed on the first dielectric mirror. The spacer may include a set of layers. The multispectral filter array may include a second dielectric mirror disposed on the spacer. The second dielectric mirror may be aligned with two or more sensor elements of a set of sensor elements.

Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.

An imaging system including a sensor wafer and a logic wafer. The sensor wafer includes a plurality of pixels arranged in rows and columns, the plurality of pixels arranged in rows and columns and including at least a first pixel and a second pixel positioned in a first row included in the rows. The sensor wafer includes a first transfer control line associated with the first row, the first transfer control line coupled to both a first transfer gate of the first pixel and a second transfer gate of the second pixel. The logic wafer includes a first storage capacitor associated with the first pixel and a second storage capacitor associated with the second pixel, a first storage control line coupled to a first storage gate associated with the first pixel and a second storage control line coupled to a second storage gate associated with the second pixel.

Systems and methods in accordance with embodiments of the invention implement TDI imaging techniques in conjunction with monolithic CCD image sensors having multiple distinct imaging regions, where TDI imaging techniques can be separately implemented with respect to each distinct imaging region. In many embodiments, the distinct imaging regions are defined by color filters or color filter patterns (e.g. a Bayer filter pattern); and data from the distinct imaging regions can be read out concurrently (or else sequentially and/or nearly concurrently). A camera system can include: a CCD image sensor including a plurality of pixels that define at least two distinct imaging regions, where pixels within each imaging region operate in unison to image a scene differently than at least one other distinct imaging region. In addition, the camera system is operable in a time-delay integration mode whereby time delay-integration imaging techniques are imposed with respect to each distinct imaging region.