A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

A method comprises forming a gate structure over a semiconductor substrate; etching back the gate structure; forming a gate dielectric cap over the etched back gate structure; depositing an etch-resistant layer over the gate dielectric cap; depositing a contact etch stop layer over the gate dielectric cap and an interlayer dielectric (ILD) layer over the contact etch stop layer; performing a first etching process to form a gate contact opening extending through the ILD layer and terminating prior to reaching the etch-resistant layer; performing a second etching process to deepen the gate contact opening, wherein the second etching process etches the etch-resistant layer at a slower etch rate than etching the contact etch stop layer; and forming a gate contact in the deepened gate contact opening.

A display module and a method for manufacturing the same are provided. The display module manufacturing method includes: forming a semiconductor pattern on a substrate; forming a first insulating layer covering the semiconductor pattern on the substrate; forming a gate electrode on a region of the first insulating layer corresponding to a gate region of the semiconductor pattern; forming a second insulating layer covering the gate electrode on the first insulating layer; forming a first hole passing through the first insulating layer and the second insulating layer to expose a drain region of the semiconductor pattern and forming a second hole passing through the first insulating layer and the second insulating layer to expose a source region of the semiconductor pattern; and forming a first barrier pattern on the drain region in the first hole and a second barrier pattern on the source region in the second hole, and forming a drain electrode on the first barrier pattern and a source electrode on the second barrier pattern.

An active device substrate includes a substrate, a first semiconductor layer, a gate insulating layer, a first gate, a first source, a first drain and a shielding electrode. The first semiconductor layer includes a first heavily doped region, a first lightly doped region, a channel region, a second lightly doped region, and a second heavily doped region that are sequentially connected. The first gate is located on the gate insulating layer and overlaps the channel region. The first source is electrically connected to the first heavily doped region. The first drain is electrically connected to the second heavily doped region. The shielding electrode overlaps the second lightly doped region in a normal direction of the substrate.

According to one embodiment, a semiconductor device includes a gate electrode, a first insulating layer covering the gate electrode, an oxide semiconductor provided on the first insulating layer immediately above the gate electrode, a source electrode in contact with the oxide semiconductor, and a drain electrode in contact with the oxide semiconductor. Each of the source electrode and the drain electrode includes an oxide conductive layer in contact with the oxide semiconductor, a first metal layer stacked on the oxide conductive layer, a second metal layer formed of a different material from the first metal layer and stacked on the first metal layer, and a third metal layer formed of a same material as the first metal layer and stacked on the second metal layer.

An integrated circuit (IC) device includes a conductive region including a first metal on a substrate. An insulating film is on the conductive region. A conductive plug including a second metal passes through the insulating film and extends in a vertical direction. A conductive barrier pattern is between the conductive region and the conductive plug. The conductive barrier pattern has a first surface in contact with the conductive region and a second surface in contact with the conductive plug. A bottom surface and a lower sidewall of the conductive plug are in contact with the conductive barrier pattern, and an upper sidewall of the conductive plug is in contact with the insulating film. The conductive barrier pattern includes a vertical barrier portion between the insulating film and the conductive plug, and the vertical barrier portion has a width tapering along a first direction away from the conductive region.

A semiconductor device includes an active region extending in a first direction; a device isolation layer on side surfaces of the active region and defining the active region; a gate structure intersecting the active region on the active region and extending in a second direction; source/drain regions in regions in which the active region is recessed, on both sides of the gate structure; first protective layers between the device isolation layer and the gate structure; and a buried interconnection line below the source/drain regions and connected to one of the source/drain regions through an upper surface of the buried interconnection line.

The present disclosure provides a thin film transistor and a fabrication method thereof, an array substrate and a fabrication method thereof, and a display panel. The method for fabricating a thin film transistor includes: forming an active layer including a first region, a second region and a third region on a substrate; forming a gate insulating layer on a side of the active layer away from the substrate; forming a gate electrode on a side of the gate insulating layer away from the active layer; and ion-implanting the active layer from a side of the gate electrode away from the active layer, so that the first region is formed into a heavily doped region, the second region is formed into a lightly doped region, and the third region is formed into an active region.

A transistor device including source and drain electrodes, a fin structure extending between and contacting respective sidewalls of the source and drain electrodes, a semiconductor channel layer over the upper surface and side surfaces of the fin structure and including a first and second vertical portions over the side surfaces of the fin structure, and the first and second vertical portions of the semiconductor channel layer both contact the respective sidewalls of the source electrode and the drain electrode, a gate dielectric layer over the semiconductor channel layer, and a gate electrode over the gate dielectric layer. By forming the semiconductor channel layer over a fin structure extending between sidewalls of the source and drain electrodes, a contact area between the semiconductor channel and the source and drain electrodes may be increased, which may provide increased driving current for the transistor device without increasing the device size.

A semiconductor device includes first transistor having a first gate stack and first source/drain regions on opposing sides of the first gate stack; a second transistor having a second gate stack and second source/drain regions on opposing sides of the second gate stack; and a gate isolation structure separating the first gate stack from the second gate stack. The gate isolation structure includes a dielectric liner having a varied thickness along sidewalls of the first gate stack and the second gate stack and a dielectric fill material over the dielectric liner, wherein the dielectric fill material comprises a seam.