A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.

A semiconductor device is provided in accordance with some embodiments. The semiconductor device includes an interfacial layer disposed over a channel region, a gate dielectric structure disposed over the channel region, and a gate electrode disposed over the gate dielectric structure. The gate dielectric structure includes a first layer of an oxide of a first metal disposed over the interfacial layer and a second layer of an oxide or silicate of a second metal disposed over the first layer. The first layer has a first thickness, and the second layer has second a thickness that is at least three times greater than the first thickness. An oxygen areal density of the oxide of the first metal is greater than an oxygen areal density of the oxide of the second metal.

A semiconductor structure and a method of fabricating thereof is provided. The semiconductor structure may include a plurality of channel layers disposed over a semiconductor substrate, a plurality of metal gate (MGs) each disposed between two channel layers, an inner spacer disposed on a sidewall of each MG, a source/drain (S/D) feature disposed adjacent to the plurality of MGs, and a low-k dielectric feature disposed on the inner spacer, where the low-k dielectric feature extends into the S/D feature. The low-k dielectric feature may include two dissimilar dielectric layers, one of which may be air.

A semiconductor structure may include one or more metal gates, one or more channels below the one or more metal gates, a gate dielectric layer separating the one or more metal gates from the one or more channels, and a high-k material embedded in the gate dielectric layer. Both the high-k material and the gate dielectric layer may be in direct contact with the one or more channels. The high-k material may provide threshold voltage variation in the one or more metal gates. The high-k material is a first high-k material or a second high-k material. The semiconductor structure may only include the first high-k material embedded in the gate dielectric layer. The semiconductor structure may only include the second high-k material embedded in the gate dielectric layer. The semiconductor structure may include both the first high-k material and the second high-k material embedded in the gate dielectric layer.

A method comprises forming a gate structure over a substrate; forming a gate helmet to cap the gate structure; forming a source/drain contact on the substrate; depositing a contact etch stop layer (CESL) over the gate helmet and the source/drain contacts, and an interlayer dielectric (ILD) layer over the CESL; performing a first etching process to form a gate contact opening extending through the ILD layer, the CESL and the gate helmet to the gate structure; forming a metal cap in the gate contact opening; with the metal cap in the gate contact opening, performing a second etching process to form a source/drain via opening extending through the ILD layer, the CESL to the source/drain contact; and after forming the source/drain via opening, forming a gate contact over the metal cap and a source/drain via over the source/drain contact.

Semiconductor devices and methods of forming the devices are provided. Semiconductor devices include a semiconductor layer structure comprising a trench in an upper surface thereof, a dielectric layer in a lower portion of the trench, and a gate electrode in the trench and on the dielectric layer opposite the semiconductor layer structure. The trench may include rounded upper corner and a rounded lower corner. A center portion of a top surface of the dielectric layer may be curved, and the dielectric layer may be on opposed sidewalls of the trench. The dielectric layer may include a bottom dielectric layer on a bottom surface of the trench and on lower portions of the sidewalls of the trench and a gate dielectric layer on upper portions of the sidewalls of the trench and on the bottom dielectric layer.

A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

A method for manufacturing a semiconductor device includes forming an insulation film including a trench on a substrate, forming a first metal gate film pattern and a second metal gate film pattern in the trench, redepositing a second metal gate film on the first and second metal gate film patterns and the insulation film, and forming a redeposited second metal gate film pattern on the first and second metal gate film patterns by performing a planarization process for removing a portion of the redeposited second metal gate film so as to expose a top surface of the insulation film, and forming a blocking layer pattern on the redeposited second metal gate film pattern by oxidizing an exposed surface of the redeposited second metal gate film pattern.

According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode members and a plurality of insulating members, each of the electrode members and each of the insulating members being stacked alternately in a first direction on the substrate. The semiconductor memory device also includes a memory hole that extends in the stacked body in the first direction and a semiconductor member that is disposed to extend in the memory hole in the first direction. The semiconductor memory device also includes a memory member that is disposed between the semiconductor member and the plurality of electrode members. The plurality of electrode members including a first electrode member and a second electrode member, a thickness of the memory member at the position of the first electrode member being greater than a thickness of the memory member at the position of the second electrode member.