The present disclosure provides a silicon controlled rectifier and a manufacturing method thereof. The silicon controlled rectifier comprises: an N-type well 60, an upper portion of which is provided with a P-type heavily doped region 20 and an N-type heavily doped region 28; an N-type well 62, an upper portion of which is provided with a P-type heavily doped region 22 and an N-type heavily doped region 26; and a P-type well 70 connecting the N-type well 60 and 62, an upper portion of which is provided with a P-type heavily doped region 24; wherein a first electrode structure is in mirror symmetry with a second electrode structure with respect to the P-type heavily doped region 24, and active regions of the N-type well 60 and 62 are respectively provided between the P-type heavily doped region 24 and each of the N-type heavily doped region 28 and 26.

A device includes a semiconductor substrate. A step is formed at a periphery of the semiconductor substrate. A first layer, made of polysilicon doped in oxygen, is deposited on top of and in contact with a first surface of the substrate. This first layer extends at least on a wall and bottom of the step. A second layer, made of glass, is deposited on top of the first layer and the edges of the first layer. The second layer forms a boss between the step and a central area of the device.

A device includes a semiconductor substrate. A step is formed at a periphery of the semiconductor substrate. A first layer, made of polysilicon doped in oxygen, is deposited on top of and in contact with a first surface of the substrate. This first layer extends at least on a wall and bottom of the step. A second layer, made of glass, is deposited on top of the first layer and the edges of the first layer. The second layer forms a boss between the step and a central area of the device.

A system having a device for conducting an electrostatic discharge (ESD) current from a designated pin node. The system includes first and second pin nodes, and a switching device having a first switching threshold. The switching device includes a first, terminal coupled to a reference node, and a second terminal, coupled to the first pin node to actuate the switching device to conduct ESD current from the first pin node responsive to a voltage between the first pin node and the reference node exceeding the first switching threshold. The switching device further includes a third terminal, coupled to the second pin node, to actuate the switching device to conduct ESD current from the first pin node responsive to a voltage between the first pin node and the second pin node exceeding a second switching threshold.

A system having a device for conducting an electrostatic discharge (ESD) current from a designated pin node. The system includes first and second pin nodes, and a switching device having a first switching threshold. The switching device includes a first, terminal coupled to a reference node, and a second terminal, coupled to the first pin node to actuate the switching device to conduct ESD current from the first pin node responsive to a voltage between the first pin node and the reference node exceeding the first switching threshold. The switching device further includes a third terminal, coupled to the second pin node, to actuate the switching device to conduct ESD current from the first pin node responsive to a voltage between the first pin node and the second pin node exceeding a second switching threshold.

Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper-main lead of the transistor, through the transistor, and from a lower-main lead of the transistor to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower-main lead to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower-control lead the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper-main lead of the transistor, through the transistor, and from a lower-main lead of the transistor to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower-main lead to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower-control lead the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

A system having a device for conducting an electrostatic discharge (ESD) current from a designated pin node. The system includes first and second pin nodes, and a switching device having a first switching threshold. The switching device includes a first, terminal coupled to a reference node, and a second terminal, coupled to the first pin node to actuate the switching device to conduct ESD current from the first pin node responsive to a voltage between the first pin node and the reference node exceeding the first switching threshold. The switching device further includes a third terminal, coupled to the second pin node, to actuate the switching device to conduct ESD current from the first pin node responsive to a voltage between the first pin node and the second pin node exceeding a second switching threshold.

A system having a device for conducting an electrostatic discharge (ESD) current from a designated pin node. The system includes first and second pin nodes, and a switching device having a first switching threshold. The switching device includes a first, terminal coupled to a reference node, and a second terminal, coupled to the first pin node to actuate the switching device to conduct ESD current from the first pin node responsive to a voltage between the first pin node and the reference node exceeding the first switching threshold. The switching device further includes a third terminal, coupled to the second pin node, to actuate the switching device to conduct ESD current from the first pin node responsive to a voltage between the first pin node and the second pin node exceeding a second switching threshold.

An ESD protection device may include a substrate having first and second substrate layers, and first and second bridged regions. Each substrate layer may include first and second border regions and a middle region laterally therebetween. Each bridged region may be arranged within the middle region and a respective border region of the second substrate layer. The middle region of the second substrate layer may be laterally narrower than the middle region of the first substrate layer. Each border region of the second substrate layer may be partially arranged over the middle region of the first substrate layer and partially arranged over a respective border region of the first substrate layer. The border regions of the substrate layers, and the bridged regions may have a first conductivity type, and the middle regions of the substrate layers may have a second conductivity type different from the first conductivity type.