A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a first trench is formed in a silicon carbide layer. A second trench is formed in the silicon carbide layer to define a mesa in the silicon carbide layer between the first trench and the second trench. A first doped semiconductor material is formed in the first trench and a second doped semiconductor material is formed in the second trench. A third doped semiconductor material is formed over the mesa to define a heterojunction at an interface between the third doped semiconductor material and the mesa.

A semiconductor device A1 includes: a semiconductor layer including a trench; an insulating film covering an inner surface of the trench; a conductor embedded in the trench covered with the insulating film; a silicide layer; and a metal layer. A Schottky junction is formed by the silicide layer and a region being part of a semiconductor layer surface and being adjacent to the trench. A region including an end face of the silicide layer and an upper end face of the insulating film is covered with the metal layer, with no gap between one part and another part of the metal layer on the region. The end face is located at elevations higher than the upper end face. The metal layer and the silicide layer contain the same kind of metallic element.

A trenched power semiconductor element, a trenched-gate structure thereof being in an element trench of an epitaxial layer and including at least a shielding electrode, a shielding dielectric layer, a gate electrode, an insulating separation layer, and a gate insulating layer. The shielding electrode is disposed at the bottom of the element trench, the shielding dielectric layer is disposed at a lower portion of the element trench, surrounding the shielding electrode to separate the shielding electrode from the epitaxial layer, wherein the top portion of the shielding dielectric layer includes a hole. The gate electrode is disposed above the shielding electrode, being separated from the hole at a predetermined distance through the insulating separation layer. The insulating separation layer is disposed between the shielding dielectric layer and the gate electrode layer to seal the hole.

Electronic devices are formed on donor substrates and transferred to carrier substrates by forming bonding regions on the electronic devices and bonding the bonding regions to a carrier substrate. The transfer process may include forming anchors and removing sacrificial regions.

A Schottky metal 9 is in Schottky-contact with a center portion of a surface of an epitaxial layer 4. A peripheral trench 13 is formed by digging from the surface of the epitaxial layer 4 on a boundary portion between an active region 21 where the Schottky metal 9 is in Schottky-contact with the surface of the epitaxial layer 4 and a peripheral region 22 outside of the active region in a surface layer portion of the epitaxial layer 4. An insulating film 14 is formed on an entire area of inner wall surfaces of the peripheral trench 13. There is provided with a conductor 15 which is connected to the Schottky metal 9 and is opposed to the entire area of the inner wall surfaces of the peripheral trench 13 via the insulating film 14 in the peripheral trench 13.

A semiconductor device has a plurality of transistors, which have first electrodes in first trenches, and includes: two second trenches, which are formed side by side between the first trenches. A second electrode is formed in each of the two second trenches. A first impurity region is formed between the first trench and the second trench; a second impurity region is formed to abut on the first trench; a third impurity region is formed to abut on the second trench; a fourth impurity region, which is formed between two of the second trenches and has a higher impurity concentration than the first impurity region; and a fifth impurity region is formed below the first impurity region and the fourth impurity region. A third electrode is formed to be electrically connected to the first impurity region, the second impurity region, the third impurity region, and the fourth impurity region.

A semiconductor device includes a diode and a semiconductor substrate. The diode includes a p-type anode region and an n-type cathode region. A lifetime control layer is provided in an area within the cathode region. The area is located on a back side than a middle portion of the semiconductor substrate in a thickness direction of the semiconductor substrate. The lifetime control layer has crystal defects which are distributed along a planar direction of the semiconductor substrate. A peak value of a crystal defect density in the lifetime control layer is higher than a crystal defect density of a front side region adjacent to the lifetime control layer on a front side of the lifetime control layer and a crystal defect density of a back side region adjacent to the lifetime control layer on a back side of the lifetime control layer.

A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer structure includes: a corundum structured crystal substrate; and a crystalline film containing a corundum structured crystalline oxide as a major component, the film formed directly on the substrate or with another layer therebetween, wherein the crystal substrate has an off angle from 0.2° to 12.0°, and the crystalline oxide contains one or more metals selected from indium, aluminum, and gallium.

A semiconductor device having a low on-voltage of IGBT and a small reverse recovery current of the diode is provided. The semiconductor device includes a semiconductor substrate having a gate trench and a dummy trench. The semiconductor substrate includes emitter, body, barrier and pillar regions between the gate trench and the dummy trench. The emitter region is an n-type region being in contact with the gate insulating film and exposed on a front surface. The body region is a p-type region being in contact with the gate insulating film at a rear surface side of the emitter region. The barrier region is an n-type region being in contact with the gate insulating film at a rear surface side of the body region and in contact with the dummy insulating film. The pillar region is an n-type region connected to the front surface electrode and the barrier region.