A complex sensing device packaging structure and packaging method are disclosed. The packaging structure includes a substrate disposed with a light emitting element and a light sensing chip. A first non-transparent material is disposed on the light sensing chip. A transparent molding material surrounds the light emitting element, the light sensing chip and the first non-transparent material. A second non-transparent material is disposed inside the transparent molding material, and the second non-transparent material is connected with the first non-transparent material

An electronic device includes a first electronic component and a second electronic. Each electronic component includes a carrier substrate having a back side and a front side, an electronic chip including an integrated optical element, an overmolded transparent block encapsulating the electronic chip above the carrier substrate, and electrical connections between the electronic chip and electrical contacts of the carrier substrate. An overmolded grid encapsulates and holds the first and second electronic components. The grid is configured so that sides of the first and second electronic components are at least partially exposed.

An optoelectronic device comprises a substrate with a photosensitive structure, a dielectric layer on a main surface of the substrate, the dielectric layer having a top surface facing away from the substrate. At least one wiring layer is arranged in the dielectric layer in places and at least one contact area is formed by a portion of the at least one wiring layer. An opening is formed at the top surface of the dielectric layer, the opening extending towards the contact area. An optical element is arranged on the top surface of the dielectric layer above the photosensitive structure and an optical filter is arranged on the top surface of the dielectric layer, the optical filter being electrically conductive, covering a portion of the optical element and being in electrical contact with the contact area. Furthermore, a method for producing an optoelectronic device is provided.

An optical sensing apparatus is provided. The optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material, the absorption region configured to receive an optical signal and generate photo-carriers in response to receiving the optical signal; an amplification region formed in the substrate configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers carriers; a buried-dopant region formed in the substrate and separated from the absorption region, wherein the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region; and a buffer layer formed between the buried-dopant region and the absorption region, wherein the buffer layer is intrinsic and has a thickness not less than 150 nm.

The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

A single photon avalanche diode (SPAD) device comprises: a silicon layer; an active region in said silicon layer for detecting incident light; and a blocking structure overlapping said active region for blocking incident light having a wavelength at least in the range of 200 nm to 400 nm, so that light having said wavelength can only be detected by said SPAD device when incident upon a region of said silicon layer outside of said active region.

A display panel having a display region which has a sensing area includes a substrate, a semiconductor layer, a light shielding layer and a first insulating layer. The semiconductor layer is disposed on the substrate. The light shielding layer is disposed between the semiconductor layer and the substrate and has a first through hole in the sensing area. The first insulating layer is disposed on the semiconductor layer and has a second through hole in the sensing area. The first through hole and the second through hole are overlapped with each other. In a cross section view of the display panel, the first through hole has a first edge, the second through hole has a second edge which is closer to the first edge and a distance between the first edge and the second edge is greater than zero.

An electronic device includes a first electronic component and a second electronic. Each electronic component includes a carrier substrate having a back side and a front side, an electronic chip including an integrated optical element, an overmolded transparent block encapsulating the electronic chip above the carrier substrate, and electrical connections between the electronic chip and electrical contacts of the carrier substrate. An overmolded grid encapsulates and holds the first and second electronic components. The grid is configured so that sides of the first and second electronic components are at least partially exposed.

According to an aspect, a detection device includes: a substrate; a plurality of photodiodes provided to the substrate and arranged in a first direction; a plurality of lenses provided so as to overlap the photodiodes; and a light-blocking layer provided between the photodiodes and the lenses and having a plurality of openings. More than one of the openings is provided in each of regions overlapping the respective photodiodes, and an arrangement direction of the openings in each of the regions overlapping the respective photodiodes is at an angle to the first direction.

An optical sensor comprising a substrate, a silicon layer having an optical sensor, light block material covering at least portions of said silicon layer and the substrate, defining a light pipe aperture above the optical sensor; and an optical layer positioned within the light pipe aperture. In some embodiments, the light pipe aperture is at least partially filled with a light transmissive material.