An apparatus includes an optical device (22) and an electrically conductive bond pad (32). A multi-layer stack (42,44,46) of electrically conductive materials is disposed on the bond pad (32). An ITO layer (48) is disposed at least partially on the optical device (22) and makes ohmic contact with the multi-layer stack (42,44,46).

An image sensor device is disclosed which includes a semiconductor layer having a first surface and a second surface, where the second surface is opposite to the first surface. The device includes a conductive structure disposed over the first surface, with a dielectric layer disposed between the conductive structure and the first surface. The device includes a first dielectric layer disposed over the second surface of the semiconductor substrate. The device includes a second dielectric layer disposed over the first dielectric layer. The device includes a color filter layer disposed over the second dielectric layer. In some embodiments, the thickness, refractive index, or both of the first dielectric layer and the thickness, refractive index, or both of the second dielectric layer may be collectively determined to cause incident radiation passing through the first dielectric layer and the second dielectric layer and to the plurality of pixels to have destructive interference.

A method for removing a foreign substance according to an embodiment includes: a step of preparing a Fabry-Perot interference filter in which a gap is formed between a portion of a first laminate at least including a first mirror portion and a portion of a second laminate at least including a second mirror portion facing each other so that a distance between the first mirror portion and the second mirror portion facing each other varies by an electrostatic force; a step of detecting a foreign substance adhering to a surface of the second laminate; and a step of blowing air in which an airflow peak position is adjusted on the basis of a position of the detected foreign substance onto the surface of the second laminate and thereby removing the foreign substance from the surface of the second laminate.

An optical filter includes a carrier layer made of a first material. A periodic grating of posts is disposed on the carrier layer in a periodic pattern configured by characteristic dimensions. The posts are made of a second material. A layer made of a third material encompasses the periodic grating of posts and covers the carrier layer. The third material has a refractive index that is different from a refractive index of the second material. Characteristic dimensions of the periodic grating of posts are smaller than an interfering wavelength and are configured to selectively reflect light at the interfering wavelength on the periodic grating of posts.

Light detecting structures comprising germanium (Ge) photodiodes formed in a device layer of a germanium on-insulator (GeOI) wafer, focal planes arrays based on such Ge photodiodes (PDs) and methods for fabricating such Ge photodiodes and focal plane arrays (FPAs). An FPA includes a Ge-on-GeOI PD array bonded to a ROIC where the handle layer of the GeOI layer is removed. The GeOI insulator properties and thickness can be designed to improve light coupling into the PDs.

An ultraviolet sensor that may include a group of serially connected photovoltaic diodes of alternating polarities; a selective blocking portion that is configured to prevent ultraviolet radiation from reaching photovoltaic diodes that belong to the group and are of a first polarity, while allowing the ultraviolet radiation to reach photovoltaic diodes that belong to the group and are of a second polarity; and an interface for providing an output signal of the group, the output signal is indicative of ultraviolet radiation sensed by the photovoltaic diodes that belong to the group and are of the second polarity.

In an embodiment an optoelectronic sensor includes a radiation-emitting semiconductor region, a radiation-detecting semiconductor region, a first polarization filter arranged above the radiation-emitting semiconductor region and including a first polarization direction and a second polarization filter arranged above the radiation-detecting semiconductor region and including a second polarization direction, wherein the first polarization direction and the second polarization direction are perpendicular to each other, wherein a radiation-reflecting or radiation-absorbing layer is arranged on side flanks of the radiation-emitting semiconductor region and/or the radiation-detecting semiconductor region and/or the first polarization filter and/or the second polarization filter.

Embodiments describe optical imagers that include one or more micro-optic components. Some imagers can be passive imagers that include a light detection system for receiving ambient light from a field. Some imagers can be active imagers that include a light emission system in addition to the light detection system. The light emission system can be configured to emit light into the field such that emitted light is reflected off surfaces of an object in the field and received by the light detection system. In some embodiments, the light detection system and/or the light emission system includes micro-optic components for improving operational performance.

Provided is a position detection sensor. In a first pixel part, as an incident position is closer to a first end of a first pixel pair group in a second direction, an intensity of a first electric signal decreases. In a second pixel part, as the incident position is closer to the first end, an intensity of a second electric signal increases. In a third pixel part, as the incident position is closer to a second end of a second pixel pair group in a first direction, an intensity of a third electric signal decreases. In a fourth pixel part, as the incident position is closer to the second end, an intensity of a fourth electric signal increases. A calculation unit calculates a second position on the basis of the first and second electric signals, and calculates a first position on the basis of the third and fourth electric signals.

Embodiments describe optical imagers that include one or more micro-optic components. Some imagers can be passive imagers that include a light detection system for receiving ambient light from a field. Some imagers can be active imagers that include a light emission system in addition to the light detection system. The light emission system can be configured to emit light into the field such that emitted light is reflected off surfaces of an object in the field and received by the light detection system. In some embodiments, the light detection system and/or the light emission system includes micro-optic components for improving operational performance.