A back surface electrode type solar cell in which a p-type region having a p-conductive type, and an n-type region which has an n-conductive type and in which maximum concentration of additive impurities for providing the n-conductive type in a substrate width direction is equal to or higher than 5×10.sup.18 atoms/cm.sup.3 are disposed on a first main surface of a crystal silicon substrate, a first passivation film is disposed so as to cover the p-type region and the n-type region, and a second passivation film is disposed on a second main surface which is a surface opposite to the first main surface so as to cover the second main surface, the first passivation film and the second passivation film being formed with a compound containing oxide aluminum.

A low-reflection film-coated transparent substrate of the present invention includes a transparent substrate and a low-reflection film formed on at least one principal surface of the transparent substrate. The low-reflection film is a porous film including: fine silica particles being solid and spherical and having an average particle diameter of 80 to 150 nm; and a binder containing silica as a main component, the fine silica particles being bound by the binder. The binder further contains an aluminum compound. The low-reflection film contains as components: 55 to 70 mass % of the fine silica particles; 25 to 40 mass % of the silica of the binder; 0.1 to 1.5 mass % of the aluminum compound in terms of Al.sub.2O.sub.3; and 0.25 to 3% of an organic component. The low-reflection film has a thickness of 80 to 800 nm. A transmittance gain is 2.5% or more, the transmittance gain being defined as an increase of average transmittance of the low-reflection film-coated transparent substrate in a wavelength range of 380 to 850 nm relative to average transmittance of the transparent substrate uncoated with the low-reflection film in the wavelength range. The organic component includes at least one selected from the group consisting of a ß-ketoester and a ß-diketone.

A solar cell and a photovoltaic module including the same are provided. The solar cell includes a substrate having a first surface and a second surface opposite to each other; a first passivation stack disposed on the first surface and including a first oxygen-rich dielectric layer, a first silicon-rich dielectric layer, a second oxygen-rich dielectric layer, and a second silicon-rich dielectric layer that are sequentially disposed in a direction away from the first surface, wherein an atomic fraction of oxygen in the first oxygen-rich dielectric layer is less than an atomic fraction of oxygen in the second oxygen-rich dielectric layer; a tunneling oxide layer disposed on the second surface; a doped conductive layer disposed on a surface of the tunneling oxide layer; and a second passivation layer disposed on a surface of the doped conductive layer.

The present invention relates to a tandem solar cell which comprises: a perovskite solar cell comprising a perovskite absorption layer; a silicon solar cell placed under the perovskite solar cell; a junction layer placed between the perovskite solar cell and the silicon solar cell; an upper electrode placed on the perovskite solar cell; and a lower electrode placed under the silicon solar cell.

A high absorption photovoltaic material and method of making the material for use in a solar cell are disclosed. The photovoltaic material includes a surface modified with a layer of repeating photonic crystal structures. The photonic crystal structures are approximately inverse conically shaped and have a curved sidewall that has an approximately Gaussian shape. The photonic crystal structures generally have a high vertical depth and sidewall angle. The structures also have a gradient refractive index profile and exhibit the parallel-to-interface refraction light trapping effect. An anti-reflective coating is disposed over the photonic crystal structure layer. The photovoltaic material exhibits near unity light absorption over a broad range of visible and near infrared wavelengths and incidence angles, even at reduced thicknesses. The photovoltaic structures are formed via a combined photolithography and reactive-ion etching method at low power with a gas mixture having a high ratio of an etchant component to a passivation component.

A solar cell includes a silicon substrate, a passivation layer, a first protection layer, a second protection layer, and a third protection layer. The material of the passivation layer is aluminum oxide, and the passivation layer is on the lower surface of the silicon substrate. The material of the first protection layer is silicon oxynitride, and the first protection layer is on a surface of the passivation layer opposite to the silicon substrate. The material of the second protection layer is silicon nitride, and the second protection layer is on a surface of the first protection layer opposite to the passivation layer. The material of the third protection layer is silicon oxynitride or silicon oxide, and the third protection layer is on a surface of the second protection layer opposite to the first protection layer.

A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiO.sub.xN.sub.y) material, where x > y. The second passivation layer includes a first silicon nitride (Si.sub.mN.sub.n) material, where m > n. The third passivation layer includes a second silicon oxynitride (SiO.sub.iN.sub.j) material, where a ratio of i/j∈ [0.97, 7.58].

A PERC solar cell selective emitter includes a silicon wafer, first and second doped regions and a laser doped region with doped layers. First doped regions are located between the doped regions of each doped layer, and each second doped region is located between two adjacent doped layers. The PERC solar cell includes the selective emitter, a front anti-reflective layer on the surface of a front passivation layer, and a positive electrode. The positive electrode includes first silver paste layers on the surfaces of the laser doped regions and second silver paste layers on the surface of the front anti-reflective layer corresponding to the first doped regions. The second silver paste layers are in electrical contact with the first silver paste layers. Damage of laser to silicon wafers is reduced, compounding in silver paste areas is reduced, an open circuit voltage is increased, and battery efficiency is improved.

Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

A laminated passivation structure of solar cell and a preparation method thereof are disclosed herein. The laminated passivation structure of solar cell includes a P-type silicon substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer sequentially arranged on the back side of the P-type silicon substrate from inside to outside. The preparation method includes generating a first dielectric layer on the back surface of the P-type silicon substrate, and then sequentially depositing a second dielectric layer and a third dielectric layer on the first dielectric layer.