A semiconductor photodiode which functions in a wide band range up to medium wave infrared and far wavelengths in addition to visible region and near infrared includes: a light absorber region in micro structure which can provide light absorbance upon being roughened by laser; a first electrical lower contact coated with metal materials such as aluminium (Al), silver (Ag); a silicon which consists of crystalline silicon (c-Si); a second electrical lower contact which is coated with metal materials such as aluminium (Al), silver (Ag); a chalcogen doped hyper-filled silicone region which is obtained as a result of doping by pulse laser to the silicone region implanted by chalcogen elements; and upper electrical contact parts which are coated generally in the thickness range of 10 nm-1000 nm by using two-layered alloys with aluminium (Al)—(Al)-silver (Ag), two-layered alloys with titanium (Ti)-gold (Au), three-layered alloys with Ti-Platinum(Pt)—Au—Ag or three-layered alloys with Ti-lead(Pb)—Ag.

An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

Provided is a method for preparing a gallium- and nitrogen-doped monocrystalline silicon using a Czochralski process, including: introducing a doping gas at least including a first amount of nitrogen into a molten mixture in a single crystal furnace; withdrawing a seed from the molten mixture while introducing the doping gas including a second amount of nitrogen into the molten mixture, a second ratio of the second amount of nitrogen to the doping gas being smaller than the first ratio; and upon occurrence of a shoulder of the monocrystalline silicon rod, adjusting the second amount of nitrogen to a third amount in such a manner that a third ratio of the third amount of nitrogen to the doping gas is greater than the second ratio, to form a monocrystalline silicon rod. A solar cell and a photovoltaic module including a gallium- and nitrogen-doped silicon wafer prepared therefrom are also provided.

Provided is a method for preparing a gallium- and nitrogen-doped monocrystalline silicon using a Czochralski process, including: introducing a doping gas at least including a first amount of nitrogen into a molten mixture in a single crystal furnace; withdrawing a seed from the molten mixture while introducing the doping gas including a second amount of nitrogen into the molten mixture, a second ratio of the second amount of nitrogen to the doping gas being smaller than the first ratio; and upon occurrence of a shoulder of the monocrystalline silicon rod, adjusting the second amount of nitrogen to a third amount in such a manner that a third ratio of the third amount of nitrogen to the doping gas is greater than the second ratio, to form a monocrystalline silicon rod. A solar cell and a photovoltaic module including a gallium- and nitrogen-doped silicon wafer prepared therefrom are also provided.

The present disclosure provides a light detecting device. The light detecting devices includes an insulating layer, a silicon layer, a light detecting layer, N first doped regions and M second doped regions. The silicon layer is disposed over the insulating layer. The light detecting layer is disposed over the silicon layer and extends within at least a portion of the silicon layer. The first doped regions have a first dopant type and are disposed within the light detecting layer. The second doped regions have a second dopant type and are disposed within the light detecting layer. The first doped regions and the second doped regions are alternatingly arranged. M and N are integers equal to or greater than 2.

The present disclosure provides a light detecting device. The light detecting devices includes an insulating layer, a silicon layer, a light detecting layer, N first doped regions and M second doped regions. The silicon layer is disposed over the insulating layer. The light detecting layer is disposed over the silicon layer and extends within at least a portion of the silicon layer. The first doped regions have a first dopant type and are disposed within the light detecting layer. The second doped regions have a second dopant type and are disposed within the light detecting layer. The first doped regions and the second doped regions are alternatingly arranged. M and N are integers equal to or greater than 2.

A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×10.sup.16 atoms/cm.sup.3 and not greater than 4×10.sup.17 atoms/cm.sup.3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×10.sup.16 atoms/cm.sup.3 and not greater than 4×10.sup.17 atoms/cm.sup.3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×10.sup.16 atoms/cm.sup.3 and not greater than 4×10.sup.17 atoms/cm.sup.3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×10.sup.16 atoms/cm.sup.3 and not greater than 4×10.sup.17 atoms/cm.sup.3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

In certain examples, methods and photo-responsive structures are directed to devices involving a diamond-based photoconductive switch having a doped diamond-grown material in the switch. The doped diamond-grown material may be formed from different gases combined on a diamond seed, such that as grown, the diamond-based material manifests a controlled dopant concentration level of a polarity type and over a depth of optical absorption sufficient to ionize the dopants in response to an optical signal.