An ultraviolet ray detecting device is provided. The ultraviolet ray detecting device comprises: a substrate; a buffer layer disposed on the substrate; a light absorption layer disposed on the buffer layer; a capping layer disposed on the light absorption layer; and a Schottky layer disposed on a partial region of the capping layer, wherein the capping layer has an energy bandgap larger than that of the light absorption layer.

The invention relates to an optoelectronic device, having at least one microwire or nanowire extending along a longitudinal axis substantially orthogonal to a plane of a substrate, and including: a first doped portion produced from a first semiconductor compound; an active zone extending from the first doped portion; a second doped portion, at least partially covering the active zone; characterised in that the active zone comprises a wider single-crystal portion: formed of a single crystal of a second semiconductor compound and at least one additional element; extending from an upper face of one end of the first doped portion, and having a mean diameter greater than that of the first doped portion.

Provided is a light-receiving device including: a photoelectric conversion layer including a Group III-V semiconductor; a plurality of first electrically-conductive type regions in signal charges generated in the photoelectric conversion layer move; and a second electrically-conductive type region penetrating through the photoelectric conversion layer and provided between adjacent ones of the first electrically-conductive type regions.

A photon counting radiation detector includes a cell structure including a substrate and an epitaxial layer provided on the substrate, radiation being incident on the epitaxial layer; an inclination θ of the substrate being set in a predetermined range, where t.sub.sub is a thickness of the substrate, t.sub.epi is a thickness of the epitaxial layer, L is a length of the substrate, and the inclination θ is an inclination of the substrate with respect to an incident direction of the radiation. The epitaxial layer is preferably one type selected from SiC, Ga.sub.2O.sub.3, GaAs, GaN, diamond, and CdTe. Such a photon counting radiation detector is preferably a direct converting type.

Systems and methods for optical data communication in high temperatures and harsh environments are provided herein. The embodiments utilize a combination of a short wavelength light source combined with a wide bandgap detector in order to transmit optical signals. An optical data communication system may include a light source connected to a light detector via an optical fiber. The light source and the light detector may also be physically adjacent to any dielectric gap that can be spanned without having an optical fiber intermediary.

A solar processing unit (SPU) for the conversion of solar energy to electric power includes a heterostructure of sheets of two (2)-dimensional materials. The heterostructure is utilized to produce a crystalline structure, wherein elemental Boron (B) and elemental Nitrogen (N), contained in sheets of hexagonal Boron Nitride (hBN), are located as bookends to one or more Carbons (C)s, between at least one sheet of Graphene. Each absorbed photon produces Multi-Excitation Generation, wherein more than one electron is generated. The SPU produces a spin motion of the Boron atoms in one direction and the Nitrogen atoms in the opposite direction within hBN by placing an external fixed magnetic field perpendicular to the sheet of hBN and a second orthogonal magnetic field paired to the strength of the fixed magnetic field and tuned to the resonant magnetic frequency of Nitrogen-15 followed by Boron-11, thereby achieving the spin required for enhanced photonic absorption.

A semiconductor chip and a method for producing a semiconductor chip are disclosed. In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface, which is formed by a planar region having a plurality of three-dimensional surface structures on the planar region, a nucleation layer composed of oxygen-containing AlN directly disposed on the growth surface and a nitride-based semiconductor layer sequence disposed on the nucleation layer, wherein the semiconductor layer sequence is selectively grown from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.

A conductive, porous gallium-nitride layer can be formed as an active layer in a multilayer structure adjacent to one or more p-type III-nitride layers, which may be buried in a multilayer stack of an integrated device. During an annealing process, dopant-bound atomic species in the p-type layers that might otherwise neutralize the dopants may dissociate and out-diffuse from the device through the porous layer. The release and removal of the neutralizing species may reduce layer resistance and improve device performance.

A light-emitting element according to an embodiment comprises: a substrate; a light-emitting structure comprising a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, which are successively arranged on the substrate; and first and second electrodes, which are electrically connected to the first and second conductive semiconductor layers, respectively, wherein the first electrode comprises at least one first contact portion arranged on the first conductive semiconductor layer, which is exposed to at least a part of a first area of the light-emitting structure, and connected to the first conductive semiconductor layer, and a plurality of second contact portions connected to the first conductive semiconductor layer that is exposed in a second area, which is positioned, on a plane, closer to the inner side than the first area of the light-emitting structure, and the second electrode comprises a third contact part, which is arranged in the second area of the light-emitting structure, and which is connected to the second conductive semiconductor layer.

Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.