A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.

A quantum well device includes a first layer of a first two-dimensional material, a second layer of a second two-dimensional material, and a third layer of a third two-dimensional material disposed between the first layer and second layer. The first layer, the second layer, and the third layer are adhered predominantly by van der Waals force.

A device including a non-polarization material includes a number of layers. A first layer of silicon (100) defines a U-shaped groove having a bottom portion (100) and silicon sidewalls (111) at an angle to the bottom portion (100). A second layer of a patterned dielectric on top of the silicon (100) defines vertical sidewalls of the U-shaped groove. A third layer of a buffer covers the first layer and the second layer. A fourth layer of gallium nitride is deposited on the buffer within the U-shaped groove, the fourth layer including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111), wherein a deposition thickness (h) of the gallium nitride above the first layer of silicon (100) is such that the c-GaN completely covers the h-GaN between the vertical sidewalls.

Dilute nitride subcells with graded doping are disclosed. Dilute nitride subcells having graded doping display improved efficiency, short circuit current density, and open circuit voltage.

An ultraviolet (UV) photo-detecting device, including: a substrate; a first nitride layer disposed on the substrate; a second nitride layer disposed between the first nitride layer and the substrate; a light absorption layer disposed on the first nitride layer; and a Schottky junction layer disposed on the light absorption layer.

The invention relates to a semiconductor device, e.g. for the emission or absorption of light, preferably in the deep ultraviolet (DUV) range. The device, e.g. a resonant cavity light emitting diode (RCLED) or a laser diode, is formed from: a substrate layer (302), preferably comprising a distributed Bragg reflector (DBR); a graphitic layer (304); and at least one semiconductor structure (310), preferably a wire or a pyramid, grown on the graphitic layer, with or without the use of a mask layer (306). The semiconductor structure is constructed from at least one III-V semiconductor n-type doped region (316) and a hexagonal boron-nitride (hBN) region (312), preferably being p-type doped hBN.

An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes. The sensor may be configured to be sensitive to a specific subtype or subband of ultraviolet radiation to be detected by selecting a specific composition of said Group-III Nitride layers.

The invention relates to a method for producing a plurality of optoelectronic semiconductor components (1), comprising the following steps: a) providing a semiconductor layer sequence (2) having a plurality of semiconductor body regions (200); b) providing a plurality of carrier bodies (3), which each have a first contact structure (31) and a second contact structure (32); c) forming a composite (4) having the semiconductor layer sequence and the carrier bodies in such a way that adjacent carrier bodies are separated from one another by interspaces (35) and each semiconductor body area is electrically conductive connected to the first contact structure and the second contact structure of the associated carrier body; and d) separating the composite into the plurality of semiconductor components, wherein the semiconductor components each have a semiconductor body (20) and a carrier body. The invention further relates to an optoelectronic semiconductor component (1).

The present technology relates to a solid-state image capturing apparatus and an electronic device that can acquire a normal image and a narrow band image at the same time. The solid-state image capturing apparatus includes a plurality of substrates laminated in two or more layers, and two or more substrates of the plurality of substrates have pixels that perform photoelectric conversion. At least one substrate of the substrates having the pixels is a visible light sensor that receives visible light, and at least another substrate of the substrates having the pixels is a narrow band light sensor that includes narrow band filters being optical filters permeating light in a narrow wavelength band, and receives narrow band light in the narrow band.

In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.