This application provides a display device and an active array switch substrate thereof. The active array switch substrate includes: a substrate; active array switches, formed on the substrate, where the active array switch includes a source electrode; at least one solar structure, disposed on the source electrode, where the solar structure includes a solar cell; and a transparent electrode, covered on the solar cell. The solar cell includes an N-type layer, an I-type layer of a microcrystalline silicon structure, and a P-type layer sequentially stacked in a direction away from the source electrode.

The present disclosure relates to a method for manufacturing a monolithic tandem solar cell in which a perovskite solar cell is laminated and bonded on a silicon solar cell. According to the present disclosure, a first microporous precursor thin film is formed through a sputtering method on a substrate having an unevenly structured texture and then a halide thin film is formed on the first microporous precursor thin film to form a perovskite absorption layer, whereby light reflectance can be reduced and a path of light can be increased, and accordingly a light absorption rate can be increased.

Disclosed is a solar cell including a control passivation film on one surface of a semiconductor substrate, and being formed of a dielectric material; and a semiconductor layer on the control passivation film, wherein the semiconductor layer including a first conductive region having a first conductive type and a second conductive region having a second conductive type opposite to the first conductive type. The semiconductor substrate includes a diffusion region including at least one of a first diffusion region and a second diffusion region adjacent to the control passivation film, wherein the first diffusion region being locally formed to correspond to the first conductive region and having a doping concentration lower than a doping concentration of the first conductive region, wherein the second diffusion region being locally formed to correspond to the second conductive region and having a doping concentration lower than a doping concentration of the second conductive region.

An inorganic nanocrystal solar cell comprising a substrate, a layer of metal, a layer of CdTe, a layer of CdSe, and a layer of transparent conductor. An inorganic nanocrystal solar cell comprising a transparent conductive substrate, a layer of CdSe, a layer of CdTe, and a Au contact. A method of spray deposition for inorganic nanocrystal solar cells comprising subjecting a first solution of CdTe or CdSe nanocrystals to ligand exchange with a small coordinating molecule, diluting the first solution in solvent to form a second solution, applying the second solution to a substrate, drying the substrate, dipping the substrate in a solution in MeOH of a compound that promotes sintering, washing the substrate with iPrOH, drying the substrate with N.sub.2, and heating and forming a film on the substrate.

Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

A method for manufacturing a multi-junction photoelectric conversion device includes forming a first electrode on a first photoelectric conversion unit including a first semiconductor layer as a photoelectric conversion layer, the first electrode including a plurality of patterned regions separated from one another by separation grooves; and eliminating a leakage existing in the first semiconductor layer by applying a reverse bias voltage between one of the patterned regions of the first electrode and a second photoelectric conversion unit comprising a second semiconductor layer as a photoelectric conversion layer. The application of the reverse bias voltage is performed while irradiating the second photoelectric conversion unit with light, generating a photocurrent in the second photoelectric conversion unit that is larger than a photocurrent in the first photoelectric conversion unit.

A detector for optical detection of at least one object, the detector including: at least one optical sensor including at least one sensor region. The optical sensor is configured to generate at least one sensor signal dependent on an illumination of the sensor region by an incident modulated light beam. The sensor signal is dependent on a modulation frequency of the light beam. The sensor region includes at least one capacitive device including at least two electrodes. At least one insulating layer and at least one photosensitive layer are embedded between the electrodes, wherein at least one of the electrodes is at least partially optically transparent for the light beam. The detector further includes at least one evaluation device configured to generate at least one item of information on a position of the object by evaluating the sensor signal.

The present disclosure pertains to the field of back contact cell technologies, and particularly relates to a hybrid passivation back contact cell and a fabrication method thereof, the hybrid passivation back contact cell including: an N-type doped silicon substrate having a light receiving surface and a back surface, and a first semiconductor layer and a second semiconductor layer which are arranged on the back surface, wherein the second semiconductor layer includes an intrinsic silicon layer and a P-type doped silicon layer sequentially arranged in an outward direction perpendicular to the back surface, and the first semiconductor layer includes a tunneling oxide layer and an N-type doped silicon crystal layer sequentially arranged in the outward direction perpendicular to the back surface.

Provided are a solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes: a semiconductor substrate, in which a rear surface of the semiconductor substrate having a first texture structure, the first texture structure includes two or more first substructures at least partially stacked on one another, and in a direction away from the rear surface and perpendicular to the rear surface, a distance between a top surface of an outermost first substructure and a top surface of an adjacent first substructure being less than or equal to 2 m; a first passivation layer located on a front surface of the semiconductor substrate; a tunnel oxide layer located on the first texture structure; a doped conductive layer located on a surface of the tunnel oxide layer; and a second passivation layer located on a surface of the doped conductive layer.

A solar cell includes: an n-type first amorphous silicon layer provided on a first main surface of a crystalline silicon substrate; an amorphous silicon oxide layer provided on a first main surface of the first amorphous silicon layer; and an n-type fine crystal silicon layer provided on a first main surface of the amorphous silicon oxide layer. An oxygen atom concentration in the first amorphous silicon layer, the amorphous silicon oxide layer, and the fine crystal silicon layer has a maximum value in the amorphous silicon oxide layer with a thickness direction.