A method for vias and monolithic interconnects in thin-film optoelectronic devices in which at least one line segment via hole is formed by laser drilling and passes through front-contact layers and semiconductive active layer, and in which laser drilling causes forming a CIGS-type wall of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface of the via hole, forming a conductive path between at least a portion of front-contact and a portion of back-contact layers, forming a bump-shaped raised portion at the surface of the front-contact layer, forming a raised portion of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy covering a portion of the front-contact layer. A thin-film CIGS device includes at least one line segment via hole obtainable by the method.

A method for vias and monolithic interconnects in thin-film optoelectronic devices in which at least one line segment via hole is formed by laser drilling and passes through front-contact layers and semiconductive active layer, and in which laser drilling causes forming a CIGS-type wall of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface of the via hole, forming a conductive path between at least a portion of front-contact and a portion of back-contact layers, forming a bump-shaped raised portion at the surface of the front-contact layer, forming a raised portion of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy covering a portion of the front-contact layer. A thin-film CIGS device includes at least one line segment via hole obtainable by the method.

Provided are a thin-film solar cell module structure and a method of manufacturing the same.

Provided are a thin-film solar cell module structure and a method of manufacturing the same.

A method for producing a layer structure for the production of thin-film solar cells including: providing a carrier substrate, depositing a rear electrode layer on the carrier substrate, producing a rear-electrode-layer-free region, creating a measurement layer over the rear electrode layer such that the measurement layer is situated at least over the rear-electrode-layer-free region, wherein the measurement layer is a photoactive absorber layer or a precursor layer of the photoactive absorber layer, and determining a quantity or a relative share of a component of the measurement layer in a region of the measurement layer that is situated over the rear-electrode-layer-free region of the rear electrode layer.

A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

The present disclosure provides a light transmission processing system and method for a solar chip module. The light transmission processing system includes: an ink printing unit configured to print a preset pattern on an upper surface of the chip module with a UV ink so that a hollowed out region is formed on an area of the upper surface of the chip module not covered by the pattern, the chip module including a transparent substrate and a chip layer superposed on an upper surface of the transparent substrate; a curing unit configured to cure the UV ink printed on the chip module with UV light to form a UV ink protective film; and a layer removing unit configured to remove a portion of the chip layer corresponding to the hollowed out region to expose a portion of the transparent substrate corresponding to the hollowed out region.

A method of forming PV layers in which, during the curing process, an additional reaction accelerates and improves curing. In a particularly advantageous embodiment, a double layer sequence having a plastic matrix in which continuous metal particles and, in the upper layer, alkaline-solubilised siloxane portions and metal particles are provided, allows, by means of combined definitive curing during the alkaline-solubilisation, the production of a PV layer sequence with which industrial waste heat/long-wave IR radiation can be utilised photovoltaically. The active exploitation of industrial waste heat/heat/body heat offers clear, financially-viable advantages in a great number of fields.

A thin-film solar module with a substrate and a layer structure applied thereon that comprises a rear electrode layer, a front electrode layer, and an absorber layer arranged between the back electrode layer and the front electrode layer. Serially connected solar cells are formed in the layer structure by patterning zones, wherein each patterning zone comprises a first patterning line for subdividing at least the rear electrode layer, a second patterning line for subdividing at least the absorber layer, and at least one third patterning line for subdividing at least the front electrode layer. At least one patterning zone has one or more optically transparent zones in a zone region reduced by the first patterning line, which are in each case rear-electrode-layer-free, wherein the one or more optically transparent zones are implemented such that the rear electrode layer is continuous in the zone region.