A substrate processing tool is prevented from falling out of a tool holder. This substrate processing tool is a tool for attachment to a substrate processing apparatus. The substrate processing tool includes a tool main body, a blade edge portion, and an engaging portion. A holding portion that is to be held by the chuck portion of the substrate processing apparatus is formed in at least a portion of the tool main body. The blade edge portion is formed on one end side of the tool main body. The engaging portion is formed on the other end side of the tool main body, and protrudes farther than the surface of the tool main body.

A substrate processing tool is prevented from falling out of a tool holder. This substrate processing tool is a tool for attachment to a substrate processing apparatus. The substrate processing tool includes a tool main body, a blade edge portion, and an engaging portion. A holding portion that is to be held by the chuck portion of the substrate processing apparatus is formed in at least a portion of the tool main body. The blade edge portion is formed on one end side of the tool main body. The engaging portion is formed on the other end side of the tool main body, and protrudes farther than the surface of the tool main body.

Systems and methods taught herein provide thin film semiconductor devices such as thin film photovoltaic devices having via holes that enable electrical connection with a bottom surface of a topside contact of the thin film semiconductor device via the back side of the device (e.g., during mounting of the device). In some embodiments, the via holes are electrically insulated.

Systems and methods taught herein provide thin film semiconductor devices such as thin film photovoltaic devices having via holes that enable electrical connection with a bottom surface of a topside contact of the thin film semiconductor device via the back side of the device (e.g., during mounting of the device). In some embodiments, the via holes are electrically insulated.

A photovoltaic device (1) is provided with plurality of mutually subsequent photovoltaic device cells (1A, . . . , 1F) arranged along a direction of first device axis (D1). Each pair of a photovoltaic device cell and its successor are serially arranged through an interface region (1CD), further having a bypass function, and which extends along a second axis (D2), transverse to the first axis.

Disclosed is a method for making interconnected solar cells, including: a) providing a continuous layer stack on a substrate, including a top electrode layer, a bottom electrode layer adjacent to the substrate, a photovoltaic active layer and a barrier layer adjacent to the bottom electrode layer between the top and bottom electrode layers; b) selectively removing the top electrode layer and the photo-voltaic layer for obtaining a first trench exposing the barrier layer using a first laser beam with a first wavelength; c) selectively removing the barrier layer and the bottom electrode layer within the first trench for obtaining a second trench exposing the substrate using a second laser beam with a second wavelength, d) filling the first trench and the second trench with electrical insulating member. The first wavelength of the first laser beam is larger than a wavelength corresponding with a bandgap energy of the photo-voltaic layer.

Disclosed is a method for making interconnected solar cells, including: a) providing a continuous layer stack on a substrate, including a top electrode layer, a bottom electrode layer adjacent to the substrate, a photovoltaic active layer and a barrier layer adjacent to the bottom electrode layer between the top and bottom electrode layers; b) selectively removing the top electrode layer and the photo-voltaic layer for obtaining a first trench exposing the barrier layer using a first laser beam with a first wavelength; c) selectively removing the barrier layer and the bottom electrode layer within the first trench for obtaining a second trench exposing the substrate using a second laser beam with a second wavelength, d) filling the first trench and the second trench with electrical insulating member. The first wavelength of the first laser beam is larger than a wavelength corresponding with a bandgap energy of the photo-voltaic layer.

A thin-film solar module with a substrate and a layer structure applied thereon. The layer structure has a rear electrode layer, a front electrode layer, and an absorber layer arranged between the rear electrode layer and the front electrode layer. The absorber layer has doping of a first conductor type, while the front electrode layer has doping of a second conductor type. Serially connected solar cells are formed in the layer structure by patterning zones having a first patterning trench subdividing the rear electrode layer, a second patterning trench subdividing the absorber layer, and a third patterning trench subdividing the front electrode layer.

A thin-film solar module with a substrate and a layer structure applied thereon. The layer structure has a rear electrode layer, a front electrode layer, and an absorber layer arranged between the rear electrode layer and the front electrode layer. The absorber layer has doping of a first conductor type, while the front electrode layer has doping of a second conductor type. Serially connected solar cells are formed in the layer structure by patterning zones having a first patterning trench subdividing the rear electrode layer, a second patterning trench subdividing the absorber layer, and a third patterning trench subdividing the front electrode layer.

A thin-film solar cell contains: a lens material layer, a conductive contact layer, a first n-p semiconductor layer, a second n-p semiconductor layer, an insulation layer, a transparent conducting layer, a substrate, multiple first vias, multiple insulators, and multiple electrical conductors. A respective first via passes through the lens material layer, the conductive contact layer, and the first n-p semiconductor layer. The multiple insulators are accommodated in the respective first via, a top of a respective insulator is connected with the second n-p semiconductor layer, and a bottom of the respective insulator is connected with the insulation layer. The respective insulator includes a respective second via. A respective electrical conductor is formed in the respective second via, a top of the respective electrical conductor is connected with a respective transparent conducting layer, and a bottom of the respective electrical conductor is connected with the substrate.