A method of making a photovoltaic cell includes providing a metal oxide substrate. The substrate is at least translucent to light. The substrate is directed through a deposition chamber. A semiconductor is deposited over a first major surface of the substrate. The semiconductor includes a polycrystalline p-type layer. The semiconductor is exposed to a chlorine-containing compound or a chlorine molecule. A second electrode layer is provided over the semiconductor.

A roof construction for a vehicle having an opening in its fixed roof, comprises at least one panel for at least closing said opening. The panel comprises a first and a second layer of glass and in between said first and second layer of glass a sheet of photo voltaic cells as a third layer. The sheet of photo voltaic cells has an active layer of a thin film of solar cell material and further has a first area which is semi-transparent and a second area which is substantially opaque.

A roof construction for a vehicle having an opening in its fixed roof, comprises at least one panel for at least closing said opening. The panel comprises a first and a second layer of glass and in between said first and second layer of glass a sheet of photo voltaic cells as a third layer. The sheet of photo voltaic cells has an active layer of a thin film of solar cell material and further has a first area which is semi-transparent and a second area which is substantially opaque.

A solar device includes a first string of first solar wafers, wherein a plurality of the first solar wafers each overlap with at least one vertically adjacent solar wafer from the first string. Additionally, the solar device includes a second string of second solar wafers, wherein a plurality of the second solar wafers each overlap with at least one vertically adjacent solar wafer from the second string, wherein a plurality of the first solar wafers overlap with one or more of the plurality of second solar wafers to electrically connect horizontally adjacent solar wafers in parallel.

A solar device includes a first string of first solar wafers, wherein a plurality of the first solar wafers each overlap with at least one vertically adjacent solar wafer from the first string. Additionally, the solar device includes a second string of second solar wafers, wherein a plurality of the second solar wafers each overlap with at least one vertically adjacent solar wafer from the second string, wherein a plurality of the first solar wafers overlap with one or more of the plurality of second solar wafers to electrically connect horizontally adjacent solar wafers in parallel.

A photoelectric conversion module (10) comprises a photoelectric conversion cell (12) including a first electrode layer (22), a second electrode layer (24), and a photoelectric conversion layer (26); and a plurality of grid electrodes (31). At least one of the first electrode layer and the second electrode layer is a transparent electrode layer. The transparent electrode layer includes a first region and a second region. The second region has sheet resistance smaller than sheet resistance in the first region, a film thickness larger than a film thickness in the first region, or transmittance smaller than transmittance in the first region. An interval between the grid electrodes adjacent to each other in the first direction in the first region is smaller than an interval between the grid electrodes adjacent to each other in the first direction in the second region.

A thin-film solar module with a substrate and a layer structure applied thereon. The layer structure has a rear electrode layer, a front electrode layer, and an absorber layer arranged between the rear electrode layer and the front electrode layer. The absorber layer has doping of a first conductor type, while the front electrode layer has doping of a second conductor type. Serially connected solar cells are formed in the layer structure by patterning zones having a first patterning trench subdividing the rear electrode layer, a second patterning trench subdividing the absorber layer, and a third patterning trench subdividing the front electrode layer.

Object of the invention is to provide a new thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode, wherein the photoactive layer is arranged between the first and the second electrode, wherein at least one additional conductive line is arranged within an active area of the thin film cell and included in the photoactive layer and electrically interconnected with the first electrode and electrically insulated from the second electrode. Furthermore, the invention provides a method of forming a thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode and the photoactive layer is arranged between the first and the second electrode.

A method of making a GaN device includes: forming a GaN substrate; forming a plurality of spaced-apart first metal contacts directly on the GaN substrate; forming a layer of insulating GaN on the exposed portions of the upper surface; forming a stressor layer on the contacts and the layer of insulating GaN; forming a handle substrate on the first surface of the stressor layer; spalling the GaN substrate that is located beneath the stressor layer to separate a layer of GaN and removing the handle substrate; bonding the stressor layer to a thermally conductive substrate; forming a plurality of vertical channels through the GaN to define a plurality of device structures; removing the exposed portions of the layer of insulating GaN to electrically isolate the device structures; forming an ohmic contact layer on the second surface; and forming second metal contacts on the ohmic contact layer.

A method of making a GaN device includes: forming a GaN substrate; forming a plurality of spaced-apart first metal contacts directly on the GaN substrate; forming a layer of insulating GaN on the exposed portions of the upper surface; forming a stressor layer on the contacts and the layer of insulating GaN; forming a handle substrate on the first surface of the stressor layer; spalling the GaN substrate that is located beneath the stressor layer to separate a layer of GaN and removing the handle substrate; bonding the stressor layer to a thermally conductive substrate; forming a plurality of vertical channels through the GaN to define a plurality of device structures; removing the exposed portions of the layer of insulating GaN to electrically isolate the device structures; forming an ohmic contact layer on the second surface; and forming second metal contacts on the ohmic contact layer.