H01L31/0516

Local metallization for semiconductor substrates using a laser beam

Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.

Local patterning and metallization of semiconductor structures using a laser beam

Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a metal foil over the intervening layer. The method also includes exposing the metal foil to a laser beam, wherein exposing the metal foil to the laser beam forms openings in the intervening layer and forms a plurality of conductive contact structures electrically connected to portions of the substrate exposed by the openings.

Tri-layer semiconductor stacks for patterning features on solar cells

Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

FORMING FRONT METAL CONTACT ON SOLAR CELL WITH ENHANCED RESISTANCE TO STRESS

System and method of providing a photovoltaic (PV) cell having a cushion layer to alleviate stress impact between a front metal contact and a thin film PV layer. A cushion layer is disposed between an extraction electrode and a photovoltaic (PV) surface. The cushion layer is made of a nonconductive material and has a plurality of vias filled with a conductive material to provide electrical continuity between the bus bar and the PV layer. The cushion layer may be made of a flexible material preferably with rigidity that matches the substrate. Thus, the cushion layer can effectively protect the PV layer from physical damage due to tactile contact with the front metal contact.

METHOD FOR PRODUCING BACK CONTACT SOLAR CELL

A method for producing a back-contact solar cell, includes forming an oxide film on a back surface of a crystalline silicon substrate; forming a silicon thin film layer on an exposed surface of the oxide film; partially forming an n.sup.+ layer in the silicon thin film layer by ion implantation using a mechanical hard mask and activation annealing; forming a passivation film on each of both surfaces of the crystalline silicon substrate having the oxide film, the silicon thin film layer, and the n.sup.+ layer; and removing part of one or more regions of the passivation film formed on the back-surface side of the crystalline silicon substrate, the one or more regions not covering the n.sup.+ layer, and forming one or more aluminum electrodes on the exposed silicon thin film layer, in the stated order.

BACK CONTACT SOLAR CELL ASSEMLIES
20220165894 · 2022-05-26 · ·

A back contact solar cell assembly and methods for its manufacture and assembly onto a panel for use in space vehicles are described. The solar cell assembly includes a compound semiconductor multijunction solar cell having a contact at the top surface of the solar cell, a conductive semiconductor element extending from the contact on the top surface to the back surface of the assembly where it forms a first hack contact of a first polarity type, and a second back contact of a second polarity at the back surface of the assembly electrically coupled to the back surface of the solar cell.

MANUFACTURING METHOD AND MANUFACTURING APPARATUS FOR INTERCONNECTION MEMBER
20230275172 · 2023-08-31 ·

The present disclosure discloses a manufacturing method and a manufacturing device for an interconnection piece. The manufacturing method comprises providing a solder strip, and performing forming treatment on the solder strip to obtain a plurality of structural solder strips; and providing a flexible insulating substrate, and compounding the plurality of structural solder strips on the flexible insulating substrate at intervals to obtain the interconnection piece. Each structural solder strip is provided with two soldering portions and a connecting portion located between the two soldering portions, and the connecting portion is respectively connected to the two soldering portions; at least a part of the connecting portion is located on the flexible insulating substrate, and the two soldering portions extend out of the flexible insulating substrate.

Thin film stacks for group V doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks

According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

Photovoltaic cell and laminate metallization
11742444 · 2023-08-29 · ·

A photovoltaic laminate is disclosed. Embodiments include placing a first encapsulant on a substantially transparent layer that includes a front side of a photovoltaic laminate. Embodiments also include placing a first solar cell on the first encapsulant. Embodiments include placing a metal foil on the first solar cell, where the metal foil uniformly contacts a back side of the first solar cell. Embodiments include forming a metal bond that couples the metal foil to the first solar cell. In some embodiments, forming the metal bond includes forming a metal contact region using a laser source, wherein the formed metal contact region electrically couples the metal foil to the first solar cell. Embodiments can also include placing a backing material on the metal foil. Embodiments can further include forming a back layer on the backing material layer and curing the substantially transparent layer, first encapsulant, first solar cell, metal foil, backing material and back layer to form a photovoltaic laminate.

Wire-based metallization and stringing for solar cells

Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a substrate has a surface. A plurality of N-type and P-type semiconductor regions is disposed in or above the surface of the substrate. A conductive contact structure is disposed on the plurality of N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of conductive wires, each conductive wire of the plurality of conductive wires essentially continuously bonded directly to a corresponding one of the N-type and P-type semiconductor regions.