Patent classifications
H01L31/107
Optical measuring device comprising a measuring unit to generate time information representing an elapsed time in accordance with pulse signal output from a light receiving group
A plurality of photodetectors form a light receiving group, and a plurality of the light receiving groups form one pixel. A light receiving array is provided with one or more of such pixels. The photodetectors each output a pulse signal in response to irradiation of a photon. A measuring unit is provided for each of the plurality of light receiving groups. The measuring unit generates time information representing an elapsed time from an irradiation timing input from outside and light quantity information acquired at each of one or more timings identified from the time information, in accordance with the pulse signal output from the light receiving group. The number of the photodetectors outputting the pulse signal among the plurality of photodetectors belonging to the light receiving group is used as the light quantity information.
SILICON PHOTOMULTIPLIER BASED LIDAR
Provided are methods, systems, and computer program products for a LiDAR with an increased dynamic range. The method includes filtering output pulses of an SiPM device to a substantially symmetric pulse shape and capturing timing information and intensity information of the filtered output pulses for at least one predetermined intensity level. The method includes monitoring saturation of the SiPM device, wherein a width of a saturation plateau of a respective output pulse is determined in response to saturation of the SiPM device. The method also includes extrapolating additional timing information and additional intensity information of the respective output pulse using the captured timing information, the captured intensity information, and the determined width of the saturation plateau.
SILICON PHOTOMULTIPLIER BASED LIDAR
Provided are methods, systems, and computer program products for a LiDAR with an increased dynamic range. The method includes filtering output pulses of an SiPM device to a substantially symmetric pulse shape and capturing timing information and intensity information of the filtered output pulses for at least one predetermined intensity level. The method includes monitoring saturation of the SiPM device, wherein a width of a saturation plateau of a respective output pulse is determined in response to saturation of the SiPM device. The method also includes extrapolating additional timing information and additional intensity information of the respective output pulse using the captured timing information, the captured intensity information, and the determined width of the saturation plateau.
Photoelectric conversion device, photoelectric conversion system, and moving body
A photoelectric conversion device includes a photoelectric conversion region, a readout circuit, and a counting circuit. The photoelectric conversion region is configured to generate a signal charge. The readout circuit is configured to, when reading out a signal that is based on the signal charge generated at the photoelectric conversion region, selectively perform first readout for reading out the signal using avalanche multiplication that is based on the signal charge and second readout for reading out the signal without causing avalanche multiplication to occur with respect to at least a part of the signal charge. The counting circuit is configured to count a number of occurrences of avalanche current which is caused to occur by avalanche multiplication in the first readout.
Photoelectric conversion device, photoelectric conversion system, and moving body
A photoelectric conversion device includes a photoelectric conversion region, a readout circuit, and a counting circuit. The photoelectric conversion region is configured to generate a signal charge. The readout circuit is configured to, when reading out a signal that is based on the signal charge generated at the photoelectric conversion region, selectively perform first readout for reading out the signal using avalanche multiplication that is based on the signal charge and second readout for reading out the signal without causing avalanche multiplication to occur with respect to at least a part of the signal charge. The counting circuit is configured to count a number of occurrences of avalanche current which is caused to occur by avalanche multiplication in the first readout.
Ion detection systems
An ion detection system comprising an upper plate configured for propagation of ions therethrough, a lower plate comprising a converter configured for converting ions impinging thereon to secondary electrons, a secondary electron multiplication assembly configured for receiving the secondary electrons and comprising at least one or optionally a series of oppositely facing pairs of dynodes, wherein in the optional series of oppositely facing pairs of dynodes, each pair is spaced apart from an adjacent pair, and wherein a first electric field is created in between the oppositely facing pair of dynodes. A magnetic system is provided for generating a magnetic field.
Method for determining the distance separating an object and an optical detection system, and corresponding system
A method, for determining the real distance separating an object and an optical detection system, includes, from several so-called reported distances respectively less than or equal to individual reference distances dependent respectively on modulation frequencies: in a first step, determining an initial deviation coefficient between the reported distances and incrementing the smallest of the reported distances with the corresponding individual reference distance; then in a second step, determining a current deviation coefficient between the current distances obtained in the preceding step and incrementing the smallest of the current distances with the corresponding individual reference distance; and in a third step, repeating the second step until all the current distances exceed a common reference distance greater than the individual reference distances.
Method for determining the distance separating an object and an optical detection system, and corresponding system
A method, for determining the real distance separating an object and an optical detection system, includes, from several so-called reported distances respectively less than or equal to individual reference distances dependent respectively on modulation frequencies: in a first step, determining an initial deviation coefficient between the reported distances and incrementing the smallest of the reported distances with the corresponding individual reference distance; then in a second step, determining a current deviation coefficient between the current distances obtained in the preceding step and incrementing the smallest of the current distances with the corresponding individual reference distance; and in a third step, repeating the second step until all the current distances exceed a common reference distance greater than the individual reference distances.
METHODS AND SYSTEM OF ENHANCED NEAR-INFRARED LIGHT ABSORPTION OF IMAGING SYSTEMS USING METASURFACES AND NANOSTRUCTURES
A pixel for an imaging sensor is disclosed that includes a photodetector and a metasurface. The photodetector includes a first surface and sidewalls that extend into the photodetector in a first direction from the first surface. The metasurface is formed on the first surface and includes nanostructures that bend a predetermined range of wavelengths of light at least 70 degrees in opposing angles from a direction that is substantially perpendicular to the first surface, and a standing wave pattern forms in an active region of the pixel. The predetermined range of wavelengths of light includes 700 nm to 1100 nm inclusive. In one embodiment, the pixel is a silicon-based photodetector, a thickness of the pixel in the first direction is less than or equal to 5 μm, and the pixel absorbs at least 20% of a power of the predetermined range of wavelengths of light.
Semiconductor Light Sensor
A light sensitive semiconductor structure comprises: a substrate; a doped upper region of said substrate having a first type of doping; a first implant region located below and being in direct contact with said doped upper region, said first implant region having a second type of doping so that a pn-junction is located between said doped upper region and said first implant region; and a second implant region located below said first implant region and having said second type of doping, and wherein a peak in a doping profile of said second type of doping is located in said second implant region.