A total station or a theodolite includes scanning functionality for optical surveying of an environment, in which the total station or the theodolite is configured such that direction-dependent active acquisition regions of the receiver are defined depending on the transmission direction of the transmitted radiation to adapt the receiver surface mechanically and/or electronically to a varying imaging position of the received radiation on the overall detector surface.

Example embodiments relate to controlling detection time in photodetectors. An example embodiment includes a device. The device includes a substrate. The device also includes a photodetector coupled to the substrate. The photodetector is arranged to detect light emitted from a light source that irradiates a top surface of the device. A depth of the substrate is at most 100 times a diffusion length of a minority carrier within the substrate so as to mitigate dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

Example embodiments relate to controlling detection time in photodetectors. An example embodiment includes a device. The device includes a substrate. The device also includes a photodetector coupled to the substrate. The photodetector is arranged to detect light emitted from a light source that irradiates a top surface of the device. A depth of the substrate is at most 100 times a diffusion length of a minority carrier within the substrate so as to mitigate dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting “collection” zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation.

A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting “collection” zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation.

Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.

Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.

A semiconductor device includes element regions which each include a first region of a first conductivity type, a second region of the first conductivity type on the first region and having a higher impurity concentration than that of the first region, a third region of a second conductivity type on the second region. The second region is between the first and third regions in a first direction. A first insulating portion surrounds each element region in a first plane. A fourth region of the first conductivity type surrounds each element region and the first insulating portion in the first plane. The fourth region has a higher impurity concentration than that of the first region. A quenching structure is above a part of the fourth region in the first direction and electrically connected to the third region.

A target reflector search device. This device comprises an emitting unit for emitting an emission fan, a motorized device for moving the emission fan over a spatial region, and a receiving unit for reflected portions of the emission fan within a fan-shaped acquisition region, and a locating unit for determining a location of the reflection. An optoelectronic detector of the receiving unit is formed as a position-resolving optoelectronic detector having a linear arrangement of a plurality of pixels, each formed as an SPAD array, and the receiving unit comprises an optical system having an imaging fixed-focus optical unit, wherein the optical system and the optoelectronic detector are arranged and configured in such a way that portions of the optical radiation reflected from a point in the acquisition region are expanded on the sensitivity surface of the optoelectronic detector in such a way that blurry imaging takes place.

A target reflector search device. This device comprises an emitting unit for emitting an emission fan, a motorized device for moving the emission fan over a spatial region, and a receiving unit for reflected portions of the emission fan within a fan-shaped acquisition region, and a locating unit for determining a location of the reflection. An optoelectronic detector of the receiving unit is formed as a position-resolving optoelectronic detector having a linear arrangement of a plurality of pixels, each formed as an SPAD array, and the receiving unit comprises an optical system having an imaging fixed-focus optical unit, wherein the optical system and the optoelectronic detector are arranged and configured in such a way that portions of the optical radiation reflected from a point in the acquisition region are expanded on the sensitivity surface of the optoelectronic detector in such a way that blurry imaging takes place.