Patent classifications
H01L31/108
Multi-sensor optical device for detecting chemical species and manufacturing method thereof
An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.
ULTRAVIOLET RAY DETECTING DEVICE
An ultraviolet ray detecting device is provided. The ultraviolet ray detecting device comprises: a substrate; a buffer layer disposed on the substrate; a light absorption layer disposed on the buffer layer; a capping layer disposed on the light absorption layer; and a Schottky layer disposed on a partial region of the capping layer, wherein the capping layer has an energy bandgap larger than that of the light absorption layer.
Multilayer coatings formed on aligned arrays of carbon nanotubes
Arrays containing carbon nanostructure-oxide-metal diodes, such as carbon nanotube (CNT)-oxide-metal diodes and methods of making and using thereof are described herein. In some embodiments, the arrays contain vertically aligned carbon nanostructures, such as multiwall carbon nanotubes (MWCNTs) coated with a conformal coating of a dielectric layer, such as a metal oxide. The tips of the carbon nanostructures are coated with a low work function metal, such as a calcium or aluminum to form a nanostructure-oxide-metal interface at the tips. The arrays can be used as rectenna at frequencies up to about 40 petahertz because of their intrinsically low capacitance. The arrays described herein produce high asymmetry and non-linearity at low turn on voltages down to 0.3 V and large current densities up to about 7,800 mA/cm.sup.2 and a rectification ratio of at least about 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, or 60.
Multilayer coatings formed on aligned arrays of carbon nanotubes
Arrays containing carbon nanostructure-oxide-metal diodes, such as carbon nanotube (CNT)-oxide-metal diodes and methods of making and using thereof are described herein. In some embodiments, the arrays contain vertically aligned carbon nanostructures, such as multiwall carbon nanotubes (MWCNTs) coated with a conformal coating of a dielectric layer, such as a metal oxide. The tips of the carbon nanostructures are coated with a low work function metal, such as a calcium or aluminum to form a nanostructure-oxide-metal interface at the tips. The arrays can be used as rectenna at frequencies up to about 40 petahertz because of their intrinsically low capacitance. The arrays described herein produce high asymmetry and non-linearity at low turn on voltages down to 0.3 V and large current densities up to about 7,800 mA/cm.sup.2 and a rectification ratio of at least about 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, or 60.
Structure, method for manufacturing same, semiconductor element, and electronic circuit
A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.
Structure, method for manufacturing same, semiconductor element, and electronic circuit
A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.
INFRARED SENSOR AND INFRARED GAS DETECTOR
The present disclosure discloses an infrared sensor, an infrared gas detector and an air quality detection device. The infrared sensor includes electrodes, a substrate, an isolation layer and a graphene film. The graphene film has a periodical nanostructure. The infrared sensor enhances the absorption of infrared light, and is capable of only absorbing specific infrared wavelengths, thus improving the selective performance of the infrared gas detector.
High power broadband terahertz emitter with enhanced stability and beam polarity
Systems and methods are provided for enhancing the terahertz power output of a terahertz beam while increasing its stability and its beam polarity by implementing a pair of pinched ripple electrodes and a small flat section in the middle of each electrode. By using tight control over the design parameters and by exploiting the plasmonic effect and the superradiance effect, systems and methods according to embodiments of the present disclosure can achieve a dramatic improvement in the terahertz output power and beam quality as well as the beam stability.
High power broadband terahertz emitter with enhanced stability and beam polarity
Systems and methods are provided for enhancing the terahertz power output of a terahertz beam while increasing its stability and its beam polarity by implementing a pair of pinched ripple electrodes and a small flat section in the middle of each electrode. By using tight control over the design parameters and by exploiting the plasmonic effect and the superradiance effect, systems and methods according to embodiments of the present disclosure can achieve a dramatic improvement in the terahertz output power and beam quality as well as the beam stability.
Low power semi-reflective display
A semi-reflective display and a method for fabricating and assembling a semi-reflective display are presented, where the display may be comprised of visible light rectifying antenna arrays tuned to four different colors, which when forward biased may use electric power to amplify reflected colored light, and when reversed biased may generate electric power by absorbing light. TFT-tunnel diode logic may be used to control each sub-pixel.