The present disclosure relates to a light detection device including: a substrate 100; a lower electrode 200 formed on the substrate; an organic semiconductor layer 300 formed on the lower electrode 200; and an upper electrode 400 formed on the organic semiconductor layer 300, wherein a Schottky contact is formed at least one of a junction between the organic semiconductor layer and the lower electrode or a junction between the organic semiconductor layer and the upper electrode.

An optical sensor structure is provided. The optical sensor structure includes a substrate, a light sensing unit, a peripheral wall, and a reflective layer. The substrate includes a plurality of metal pads. The light sensing unit is disposed on the substrate and electrically connected to the plurality of metal pads. The peripheral wall is disposed on the substrate, and the peripheral wall and the substrate define an accommodating space. The metal pads and the light sensing unit are positioned in the accommodating space. The reflective layer is disposed in the accommodating space and surrounds the light sensing unit.

An optical sensor structure is provided. The optical sensor structure includes a substrate, a light sensing unit, a peripheral wall, and a reflective layer. The substrate includes a plurality of metal pads. The light sensing unit is disposed on the substrate and electrically connected to the plurality of metal pads. The peripheral wall is disposed on the substrate, and the peripheral wall and the substrate define an accommodating space. The metal pads and the light sensing unit are positioned in the accommodating space. The reflective layer is disposed in the accommodating space and surrounds the light sensing unit.

The present invention relates to a system comprising an electronic apparatus which comprises: —an electronic device comprising: —a gate electrode structure (G, BE); —a dielectric (D) arranged over the gate electrode (G, BE); and —a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (C.sub.g) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (C.sub.q) resulting in a total capacitance (C.sub.tot); —a read-out circuit configured so that when the total capacitance (C.sub.tot) changes due to a change in the quantum capacitance (C.sub.q), an imbalance between the total capacitance (C.sub.tot) and the reference capacitance (C.sub.f) results in a change on the output voltage (V.sub.o) that is amplified to provide the read-out signal (S.sub.o). The present invention also relates to an electronic apparatus like the one of the system of the present invention.

The present invention relates to a system comprising an electronic apparatus which comprises: —an electronic device comprising: —a gate electrode structure (G, BE); —a dielectric (D) arranged over the gate electrode (G, BE); and —a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (C.sub.g) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (C.sub.q) resulting in a total capacitance (C.sub.tot); —a read-out circuit configured so that when the total capacitance (C.sub.tot) changes due to a change in the quantum capacitance (C.sub.q), an imbalance between the total capacitance (C.sub.tot) and the reference capacitance (C.sub.f) results in a change on the output voltage (V.sub.o) that is amplified to provide the read-out signal (S.sub.o). The present invention also relates to an electronic apparatus like the one of the system of the present invention.

Electromagnetic wave detector includes semiconductor layer, first insulating film, two-dimensional material layer, first electrode, second electrode, second insulating film, and control electrode. First insulating film is arranged on semiconductor layer. First insulating film is provided with opening. Two-dimensional material layer is electrically connected to semiconductor layer in opening. Two-dimensional material layer extends from above opening to first insulating film. Second insulating film is in contact with two-dimensional material layer. Control electrode is connected to two-dimensional material layer with second insulating film interposed therebetween.

Electromagnetic wave detector includes semiconductor layer, first insulating film, two-dimensional material layer, first electrode, second electrode, second insulating film, and control electrode. First insulating film is arranged on semiconductor layer. First insulating film is provided with opening. Two-dimensional material layer is electrically connected to semiconductor layer in opening. Two-dimensional material layer extends from above opening to first insulating film. Second insulating film is in contact with two-dimensional material layer. Control electrode is connected to two-dimensional material layer with second insulating film interposed therebetween.

A photoelectric detection substrate, a preparation method thereof and a photoelectric detection apparatus are provided. The photoelectric detection substrate includes a glass substrate, and an electronic apparatus and an optical apparatus disposed on the glass substrate, wherein the optical apparatus is a Schottky photo-diode. The Schottky photo-diode includes a first electrode, an ohmic contact layer disposed on one side of the first electrode away from the glass substrate, an intrinsic layer disposed on one side of the ohmic contact layer away from the glass substrate and a second electrode disposed on one side of the intrinsic layer away from the glass substrate.

A photoelectric detection substrate, a preparation method thereof and a photoelectric detection apparatus are provided. The photoelectric detection substrate includes a glass substrate, and an electronic apparatus and an optical apparatus disposed on the glass substrate, wherein the optical apparatus is a Schottky photo-diode. The Schottky photo-diode includes a first electrode, an ohmic contact layer disposed on one side of the first electrode away from the glass substrate, an intrinsic layer disposed on one side of the ohmic contact layer away from the glass substrate and a second electrode disposed on one side of the intrinsic layer away from the glass substrate.

A device includes a first stage having a first optical switch, a first transistor connected to the first optical switch, and a second transistor connected to the first optical switch and the first transistor. The device also includes a second stage having a second optical switch, a third transistor connected to the second transistor and the second optical switch, and a fourth transistor connected to the second transistor, the second optical switch, and the third transistor.