A photosensitive device that includes a conductive electrode, a dielectric layer, a sensing electrode composed of a two-dimensional layered material, and a photoactive layer which can be configured to absorb electromagnetic radiation. The photosensitive device also includes a single-ended measurement electrode for determining the electric potential of the sensing electrode.

A gas sensor containing counter electrodes and a semiconductor nanowire 4 disposed between the counter electrodes 2, 3, wherein the semiconductor nanowire 4 is in a state where light can be irradiated, which sensor measures changes in the electric current associated with adsorption of a gas to the semiconductor nanowire 4, wherein the electric current is generated by irradiation of light on the semiconductor nanowire with a voltage applied to the counter electrodes 2, 3.

A gas sensor containing counter electrodes and a semiconductor nanowire 4 disposed between the counter electrodes 2, 3, wherein the semiconductor nanowire 4 is in a state where light can be irradiated, which sensor measures changes in the electric current associated with adsorption of a gas to the semiconductor nanowire 4, wherein the electric current is generated by irradiation of light on the semiconductor nanowire with a voltage applied to the counter electrodes 2, 3.

A semiconductor device made of one or more one-dimensional chains of atoms. The atoms form covalent bonds along the chain with no dangling bonds except at both ends of the chain.

A semiconductor device made of one or more one-dimensional chains of atoms. The atoms form covalent bonds along the chain with no dangling bonds except at both ends of the chain.

The disclosure discloses a photoelectric detector and a photoelectric detection device, the photoelectric detector includes: a photosensitive active layer (100) including a first surface (1) and a second surface (2) opposite to each other; a first electrode (200) and a second electrode (300) located on the first surface (1) of the photosensitive active layer (100), and arranged spaced apart from each other; and a third electrode (400) located on the second surface (2) of the photosensitive active layer (100); where the first electrode (200) and the second electrode (300) respectively contact directly with the first surface (1) of the photosensitive active layer (100), and the third electrode (400) contacts directly with the second surface (2) of the photosensitive active layer (100). The photoelectric detector can improve the contrast between light current and dark current.

A photodetection element is a photodetection element having an incidence surface for light on a back surface of a semiconductor layer, and includes a periodic nano-concave/convex structure provided on a front surface of the semiconductor layer and having convex portions and concave portions constituting a longitudinal resonator and a transverse resonator for the light incident from the incidence surface, the periodic nano-concave/convex structure converting the light into surface plasmons, and a metal film provided to cover the periodic nano-concave/convex structure, a height and an arrangement pitch of the convex portions in the periodic nano-concave/convex structure are set such that a resonance wavelength of the longitudinal resonator and a resonance wavelength of the transverse resonator match, and a thickness of the metal film is equal to or greater than 20 nm.

A photodetection element is a photodetection element having an incidence surface for light on a back surface of a semiconductor layer, and includes a periodic nano-concave/convex structure provided on a front surface of the semiconductor layer and having convex portions and concave portions constituting a longitudinal resonator and a transverse resonator for the light incident from the incidence surface, the periodic nano-concave/convex structure converting the light into surface plasmons, and a metal film provided to cover the periodic nano-concave/convex structure, a height and an arrangement pitch of the convex portions in the periodic nano-concave/convex structure are set such that a resonance wavelength of the longitudinal resonator and a resonance wavelength of the transverse resonator match, and a thickness of the metal film is equal to or greater than 20 nm.

A photo-detecting apparatus includes a semiconductor substrate. A first germanium-based light absorption material is supported by the semiconductor substrate and configured to absorb a first optical signal having a first wavelength greater than 800 nm. A first metal line is electrically coupled to a first region of the first germanium-based light absorption material. A second metal line is electrically coupled to a second region of the first germanium-based light absorption material. The first region is un-doped or doped with a first type of dopants. The second region is doped with a second type of dopants. The first metal line is configured to control an amount of a first type of photo-generated carriers generated inside the first germanium-based light absorption material to be collected by the second region.

A (GaMe).sub.2O.sub.3 ternary alloy material, its preparation method and application in a solar-blind ultraviolet photodetector are provided. The (GaMe).sub.2O.sub.3 ternary alloy material of the present invention is formed by solid solution of Ga.sub.2O.sub.3 and Me.sub.2O.sub.3 in a molar ratio of 99:1 to 50:50, wherein the Me is any one of Lu, Sc, or Y. The (GaMe).sub.2O.sub.3 ternary alloy material of the present invention can be used to prepare the active layer of a solar-blind ultraviolet photodetector. In the present invention, the band gap of Me.sub.2O.sub.3 is higher than that of Ga.sub.2O.sub.3, and Ga.sup.3+ ions in Ga.sub.2O.sub.3 are partially replaced by Me.sup.3+ ions to obtain a higher band gap (GaMe).sub.2O.sub.3 ternary alloy material to reduce the dark current of the device and promote the blue shift of the cut-off wavelength to within 280 nm.