An apparatus (201) comprises a light emitter (202) and a photodetector (203) formed on a single fluid-permeable substrate (206) such that the photodetector (203) is able to detect light emitted by the light emitter (202) after interaction of the light with a user of the apparatus (201). The photodetector comprises a channel member (207) which may be made from graphene, respective source and drain electrodes (208, 209), a layer of photosensitive material (210) configured to vary the flow of electrical current through the channel member (207) on exposure to light from the light emitter (202), and a gate electrode (211). The apparatus (201) further comprises a layer of fluid-impermeable dielectric material (212) configured to inhibit a flow of electrical current between the channel member (207) and the gate electrode (211) of the photodetector (203) to enable the electrical conductance of the channel member (207) to be controlled by a voltage applied to the gate electrode (211) and to inhibit exposure of the light emitter (202) to fluid which has permeated through the fluid-permeable substrate (206). The layer of fluid-impermeable dielectric material (212) allows resilient substrates made from polymeric material to be used without the risk of damage to the overlying components caused by the permeated fluid. The dual functionality of the layer of fluid-impermeable dielectric material (212) reduces the number of fabrication steps used to form the apparatus (201) and results in a thinner, more compact device.

A method of fabricating a thin-film transistor (TFT) photodetector includes forming diffusion layers on a glass substrate or a transparent flexible substrate, wherein the diffusion layers include a P-type diffusion layer of P-type polycrystalline or amorphous silicon, for use as an active layer and P+-type diffusion layers of amorphous or polycrystalline silicon at both sides of the P-type diffusion layer, forming an insulating oxide layer on the formed diffusion layers, forming an N-type diffusion layer of polycrystalline or amorphous silicon on the insulating oxide film, forming a gate to be used as a light receiving part by photo-patterning the N-type diffusion layer, etching the generated insulating oxide layer except for only a necessary part in a photoresist (PR) patterning process, removing a remaining area of the P+-type diffusion layer except for areas to be used as a source and a drain by etching, and generating electrodes by depositing a metal in etched parts of the insulating oxide film in the source and the drain.

An embodiment photodetector includes a clad layer formed on a substrate, a first semiconductor layer formed on the clad layer, and a second semiconductor layer and a third semiconductor layer with the first semiconductor layer interposed therebetween formed on the clad layer. The photodetector includes a light absorbing layer made of an n-type III-V compound semiconductor formed on the first semiconductor layer through an insulating layer.

An active pattern structure includes a lower active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a buffer structure on the lower active pattern, at least a portion of which may include aluminum silicon oxide, and an upper active pattern on the buffer structure.

A method includes forming a first fin and a second fin over a substrate. The method includes forming a first dummy gate structure that straddles the first fin and the second fin. The first dummy gate structure includes a first dummy gate dielectric and a first dummy gate disposed over the first dummy gate dielectric. The method includes replacing a portion of the first dummy gate with a gate isolation structure. The portion of the first dummy gate is disposed over the second fin. The method includes removing the first dummy gate. The method includes removing a first portion of the first dummy gate dielectric around the first fin, while leaving a second portion of the first dummy gate dielectric around the second fin intact. The method includes forming a gate feature straddling the first fin and the second fin, wherein the gate isolation structure intersects the gate feature.

A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.

Semiconductor structures and method for forming the same are provided. The semiconductor structure includes a substrate and first nanostructures and second nanostructures formed over the substrate. The semiconductor structure further includes a first source/drain structure formed adjacent to the first nanostructures and a second source/drain structure formed adjacent to the second nanostructures. The semiconductor structure further includes a first contact plug formed over the first source/drain structure and a second contact plug formed over the second source/drain structure. In addition, a bottom portion of the first contact plug is lower than a bottom portion of the first nanostructures, and a bottom portion of the second contact plug is higher than a top portion of the second nanostructures.

The present invention relates to a system comprising an electronic apparatus which comprises: —an electronic device comprising: —a gate electrode structure (G, BE); —a dielectric (D) arranged over the gate electrode (G, BE); and —a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (C.sub.g) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (C.sub.q) resulting in a total capacitance (C.sub.tot); —a read-out circuit configured so that when the total capacitance (C.sub.tot) changes due to a change in the quantum capacitance (C.sub.q), an imbalance between the total capacitance (C.sub.tot) and the reference capacitance (C.sub.f) results in a change on the output voltage (V.sub.o) that is amplified to provide the read-out signal (S.sub.o). The present invention also relates to an electronic apparatus like the one of the system of the present invention.

Example embodiments relate to a graphene device, methods of manufacturing and operating the same, and an electronic apparatus including the graphene device. The graphene device is a multifunctional device. The graphene device may include a graphene layer and a functional material layer. The graphene device may have a function of at least one of a memory device, a piezoelectric device, and an optoelectronic device within the structure of a switching device/electronic device. The functional material layer may include at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, a piezoelectric material, a light emission material, and a photoactive material.

Example embodiments relate to a graphene device, methods of manufacturing and operating the same, and an electronic apparatus including the graphene device. The graphene device is a multifunctional device. The graphene device may include a graphene layer and a functional material layer. The graphene device may have a function of at least one of a memory device, a piezoelectric device, and an optoelectronic device within the structure of a switching device/electronic device. The functional material layer may include at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, a piezoelectric material, a light emission material, and a photoactive material.