Provided are an imaging device and an electronic apparatus capable of suppressing deterioration in performance due to charge accumulation. An imaging device includes: a photoelectric conversion layer having a first surface and a second surface located on an opposite side to the first surface; a first electrode located on a side of the first surface; and a second electrode located on a side of the second surface. In a thickness direction of the photoelectric conversion layer, when a region overlapping with the first electrode is defined as a first region, and a region deviating from the first electrode is defined as a second region, a first film thickness of the photoelectric conversion layer in at least a part of the first region is thinner than a second film thickness of the photoelectric conversion layer in the second region.

A display device includes a first base layer, a circuit layer disposed on the first base layer and including a plurality of switching elements, a pixel layer disposed on the circuit layer and including a light emitting element, wherein the light emitting element is configured to receive a current from at least one of the plurality of switching elements to emit a first light, and a sensor layer disposed below the first base layer and including a sensor, wherein the sensor is configured to receive a second light generated when the first light is reflected by an external object.

Embodiments described herein relate to detectors and their method of use for sensing electromagnetic fields, electromagnetic signals, biochemical analytes, and/or other conditions in subjects. The device may include an inductively-coupled implantable coil-based transducer that converts electrical, photonic, biochemical signals, and/or other appropriate signals and/or conditions originating in tissues and/or transplanted tissue grafts into changes in a property of the transducer, such as a resonance frequency, that may be detected using an alternating magnetic field that may be provided by a magnetic resonance imaging (MRI) signal and/or other appropriate source. In some embodiments, the detector comprises a FET that changes state upon detection of a subject condition of interest. The change in the FET may change the resonance frequency of an associated LC or RLC circuit. The change in resonance frequency may change the brightness and/or intensity of the detector when detected by an MRI scanner or other appropriate scanner.

A phototransistor device to act as an artificial photonic synapse includes a substrate and a graphene source-drain channel patterned on the substrate. A perovskite quantum dot layer is formed on the graphene source-drain channel. The perovskite quantum dot layer is methylammonium lead bromide material. A method of operating the phototransistor device as an artificial photonic synapse includes applying a first fixed voltage to a gate of the phototransistor and a second fixed voltage across the graphene source-drain channel. A presynaptic signal is applied as stimuli across the graphene source-drain channel. The presynaptic signal includes one or more pulses of light or electrical voltage. A current across the graphene source-drain channel is measured to represent a postsynaptic signal.

A photosensitive device and a display panel are provided. The photosensitive device includes a substrate and a photosensitive functional layer. The photosensitive functional layer includes a thin film transistor layer and a quantum dot layer. The quantum dot layer is configured to emit an excitation light under an excitation of an external light. A photo-generated current efficiency of the photosensitive device can be improved, and stability and versatility of the photosensitive device can also be improved.

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

A light sensing device includes a substrate, a gate electrode, a shielding electrode, a insulating layer, a semiconductor layer, a source electrode, and a drain electrode. The gate electrode and the shielding electrode are disposed over the substrate and spaced apart from each other. The insulating layer is disposed over the gate electrode and the shielding electrode. The semiconductor layer is disposed over the insulating layer. The source and drain electrodes are respectively connected to the semiconductor layer, and the semiconductor layer has a channel region between the source and drain electrodes. The channel region is divided into a first region adjacent to the drain electrode and overlapping the gate electrode and a second region adjacent to the source electrode and not overlapping the gate electrode, and the second region partially overlaps the shielding electrode.

A photodetecting device includes a substrate, a first photosensitive layer supported by the substrate, and a second photosensitive layer supported by the substrate and adjacent to the first photosensitive layer, each of the first photosensitive layer and the second photosensitive layer being coupled to a first doped portion having a first conductivity type, and a second doped region having a second conductivity type different from the first conductivity type, wherein the first photosensitive layer is separated from the second photosensitive layer, and the first doped portion coupled to the first photosensitive layer is electrically connected to the first doped portion coupled to the second photosensitive layer.

A photodetecting device includes a substrate, a first photosensitive layer supported by the substrate, and a second photosensitive layer supported by the substrate and adjacent to the first photosensitive layer, each of the first photosensitive layer and the second photosensitive layer being coupled to a first doped portion having a first conductivity type, and a second doped region having a second conductivity type different from the first conductivity type, wherein the first photosensitive layer is separated from the second photosensitive layer, and the first doped portion coupled to the first photosensitive layer is electrically connected to the first doped portion coupled to the second photosensitive layer.

A semiconductor structure configured to implement an optically controlled field effect transistor (FET). In one embodiment, a normally-off, optically controlled FET is realized as a semiconductor structure comprising various regions configured to implement a voltage controlled, normally on, high voltage FET region having integrated thereon a photoconductive region configured to reduce a gate-to-source voltage of the FET in response to light incident upon the photoconductive region so as to turn the FET on.