A method includes forming a dummy gate stack over a fin protruding from a semiconductor substrate, forming gate spacers on sidewalls of the dummy gate stack, forming source/features over portions of the fin, forming a gate trench between the gate spacers, which includes trimming top portions of the gate spacers to form a funnel-like opening in the gate trench, and forming a metal gate structure in the gate trench. A semiconductor structure includes a fin protruding from a substrate, a metal gate structure disposed over the fin, gate spacers disposed on sidewalls of the metal gate structure, where a top surface of each gate spacer is angled toward the semiconductor fin, a dielectric layer disposed over the top surface of each gate spacer, and a conductive feature disposed between the gate spacers to contact the metal gate structure, where sidewalls of the conductive feature contact the dielectric layer.

Embodiments of the present application provide an array substrate, a fabrication method for an array substrate, and a display panel. The array substrate includes a substrate, a gate, a gate insulating layer, a seed layer, and a semiconductor layer that are sequentially stacked. A surface of the semiconductor layer away from the seed layer has a concave-convex structure formed by growth of nanocrystalline grains, which enhances light absorption of the semiconductor layer and solves the problems of poor light sensitivity and slow response speed of semiconductor devices.

A light-sensitive sensor, an array substrate, and an electronic equipment are provided. The light-sensitive sensor includes a third metal layer, a second semiconductor layer, and a fourth metal layer. The third metal layer includes a second gate. The second semiconductor layer includes conductive portions, and the conductive portions are disposed at both ends of the second semiconductor layer. The fourth metal layer disposed on the second semiconductor layer, and the fourth metal layer includes a second source and a second drain.

A source and drain electrode are spaced apart by an optically exposed gate region above a surface photovoltage effect (SPV) bulk. A two-dimensional material is deposited upon the gate region. The gate region is activated by exposure to an ultrafast light pulse, which may be infrared or near-infrared, and may be a focused collimated laser pulse with a sub-picosecond width. The pulse causes electron-hole pair generation resulting in band bending in the SPV material, which generates an electric field within the 2D material, thereby modifying the electronic properties between source and drain via a field-effect. After passage of the pulse, conduction continues in the device until the conductive electron-hole pairs recombine during the SPV decay time. The two-dimensional material may comprise a crystalline atomic monolayer. The activation is repeatable with subsequent pulses, resulting in the device cycling on and off within timescales less than 200 picoseconds.

A source and drain electrode are spaced apart by an optically exposed gate region above a surface photovoltage effect (SPV) bulk. A two-dimensional material is deposited upon the gate region. The gate region is activated by exposure to an ultrafast light pulse, which may be infrared or near-infrared, and may be a focused collimated laser pulse with a sub-picosecond width. The pulse causes electron-hole pair generation resulting in band bending in the SPV material, which generates an electric field within the 2D material, thereby modifying the electronic properties between source and drain via a field-effect. After passage of the pulse, conduction continues in the device until the conductive electron-hole pairs recombine during the SPV decay time. The two-dimensional material may comprise a crystalline atomic monolayer. The activation is repeatable with subsequent pulses, resulting in the device cycling on and off within timescales less than 200 picoseconds.

In an embodiment, a method includes forming a plurality of fins adjacent to a substrate, the plurality of fins comprising a first fin, a second fin, and a third fin; forming a first insulation material adjacent to the plurality of fins; reducing a thickness of the first insulation material; after reducing the thickness of the first insulation material, forming a second insulation material adjacent to the first insulation material and the plurality of fins; and recessing the first insulation material and the second insulation material to form a first shallow trench isolation (STI) region.

A method for adjusting an optical system is provided, including a positioning device positioning a first optical module; a measuring device measuring an angular difference between a main axis of the first optical module and an optical axis of an optical element sustained by the first optical module to obtain a measurement information; an adjusting device changing the shape of an adjustment assembly of the first optical module according to the measurement information; and assembling the first optical module with an optical object, wherein the optical axis of the optical element is parallel to a central axis of the optical object.

A unit pixel arranged along with a display pixel in each pixel of a display panel is provided. The unit pixel may include a thin-film transistor (TFT) photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent substrate, and at least one transistor electrically coupled to the TFT photodetector and configured to generate a voltage output from photocurrent generated from the active layer.

The system can generally have a substrate, a layered structure supported by the substrate, the layered structure including a first layer being of a first material electrically conductive and transparent to said electromagnetic radiation, a second layer being of a second material electrically conductive and having a first photocurrent generation spectrum covering a first band of energy levels, a middle layer of a third material having a second photocurrent generation spectrum covering a second band of the energy levels of the electromagnetic radiation, the second band complementing the first band; the layered structure connected via the first layer and second layer as an electrical component of an electrical circuit of an acquisition module.

According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.