A transistor includes (i) a first wire including a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature and (ii) a second wire including a superconducting component configured to operate in a superconducting state while: a temperature of the superconducting component is below a superconducting threshold temperature and a first input current supplied to the superconducting component is below a current threshold. The semiconducting component is located adjacent to the superconducting component. In response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first input current exceeds the lowered current threshold.

One embodiment provides a semiconducting device for at least one of detecting, producing or manipulating electromagnetic radiation having a frequency of at least 100 gigahertz (GHz). The semiconducting device includes a heterodimensional plasmonic structure, and an active layer. The heterodimensional plasmonic structure includes at least one nanostructure configured to form a heterodimensional junction with the active layer and having a tunable resonant plasmon frequency.

A method includes applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detector unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detector unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.

A semiconductor device at least one first transistor of a first type disposed above a substrate and comprising a channel wider in one cross-section than tall, wherein the first type is a PFET transistor or an NFET transistor; and at least one second transistor of a second type disposed above the at least one first transistor and comprising a channel taller in the one cross-section than wide, wherein the second type is a PFET transistor or an NFET transistor, and the second type is different from the first type. Methods and systems for forming the semiconductor structure.

A high voltage semiconductor device includes a semiconductor substrate, a gate structure, a drift region, a drain region, and an isolation structure. The gate structure is disposed on the semiconductor substrate. The drift region is disposed in the semiconductor substrate and partially disposed at a side of the gate structure. The drain region is disposed in the drift region. The isolation structure is at least partially disposed in the drift region. A part of the isolation structure is disposed between the drain region and the gate structure. A top of the isolation structure includes a flat surface, and a bottom of the isolation structure includes a curved surface.

The present invention relates to a device for operating with THz and/or IR and/or MW radiation, comprising:—an antenna having one or more antenna branches (A1; A1, A2) and adapted to operate in the THz and/or IR and/or MW frequency range; and—a structure made of at least one photoactive material defining a photo-active area (Ga) arranged to absorb light radiation impinging thereon. The focus area of the at least one antenna branch (A1; A1, A2) is dimensionally equal or smaller than the photo-active area (Ga).

The present invention relates to a device for operating with THz and/or IR and/or MW radiation, comprising:—an antenna having one or more antenna branches (A1; A1, A2) and adapted to operate in the THz and/or IR and/or MW frequency range; and—a structure made of at least one photoactive material defining a photo-active area (Ga) arranged to absorb light radiation impinging thereon. The focus area of the at least one antenna branch (A1; A1, A2) is dimensionally equal or smaller than the photo-active area (Ga).

An electronic device includes a photodiode, a first transistor, a second transistor, a third transistor and a capacitor. The photodiode has a first terminal and a second terminal. The first transistor has a control terminal used to receive a reset signal, a first terminal coupled to the second terminal of the photodiode, and a second terminal. The second transistor has a control terminal coupled to the second terminal of the photodiode, a first terminal and a second terminal. The third transistor has a control terminal used to receive a row selection signal, a first terminal coupled to the second terminal of the second transistor, and a second terminal. The capacitor has a first terminal coupled to the second terminal of the photodiode, and a second terminal coupled to the second terminal of the first transistor.

An electronic device includes a photodiode, a first transistor, a second transistor, a third transistor and a capacitor. The photodiode has a first terminal and a second terminal. The first transistor has a control terminal used to receive a reset signal, a first terminal coupled to the second terminal of the photodiode, and a second terminal. The second transistor has a control terminal coupled to the second terminal of the photodiode, a first terminal and a second terminal. The third transistor has a control terminal used to receive a row selection signal, a first terminal coupled to the second terminal of the second transistor, and a second terminal. The capacitor has a first terminal coupled to the second terminal of the photodiode, and a second terminal coupled to the second terminal of the first transistor.

The disclosure provides a display panel and a manufacturing method thereof. The method includes: forming a main gate and a sub-gate on a glass substrate, wherein at least a portion of the sub-gate includes a light transmissive area; sequentially forming a gate insulating layer, a semiconductor layer, and a second metal layer on the sub-gate, patterning the semiconductor layer to obtain a main active layer and a sub-active layer, and patterning the second metal layer to obtain a main source/drain and a sub-source/drain.