H01L33/504

Composite Wavelength Converter

The invention refers to a composite wavelength converter (1) for an LED (100), comprising a substrate (10) and an epitaxial film (20) formed by liquid phase epitaxy on the top and bottom of the substrate (10). Furthermore, the invention refers to a method of preparation of a composite wavelength converter (1) for an LED (100). Furthermore, the invention refers to a white LED light source comprising an LED (100) and an inventive composite wavelength converter (1) mounted on a light emitting surface of the LED (100).

HYBRID WAVELENGTH CONVERTER, METHOD FOR MANUFACTURING SAME, AND LIGHT EMITTING DIODE COMPRISING SAME
20220389312 · 2022-12-08 ·

The present inventive concept relates to a hybrid wavelength converter including both a metal halide perovskite nanocrystal particles and non-perovskite-based quantum dots or non-perovskite-based phosphors converting a wavelength of light generated from an excitation light source to specific wavelengths, and a light-emitting device including the same. By including metal halide perovskite nanocrystal particles and non-perovskite quantum dots or non-perovskite phosphors in the dispersion medium, the hybrid wavelength converter according to the present inventive concept enables to make simultaneous wavelength conversion to red and green light, and to be optically stable and improved color purity and luminescence performance without changing the emission wavelength range even with a lower cadmium content than the conventional quantum dot wavelength converter.

LIGHT-EMITTING DEVICE AND ILLUMINATION APPARATUS
20220393079 · 2022-12-08 · ·

A light-emitting device emits first light having a first peak wavelength in a wavelength region of 630 to 680 nm, a second peak wavelength in a wavelength region of 430 to 480 nm, and a third peak wavelength in a wavelength region of 380 to 430 nm. The first light has, relative to a light intensity of the first light at the second peak wavelength being 1, a relative light intensity of 0.05 to 0.35 at the first peak wavelength and a relative light intensity of 0.25 to 0.45 at the third peak wavelength. The first light has a first minimum value of the light intensity in a wavelength region from 480 nm to the first peak wavelength.

High Color Rendering, High Efficacy White Light Emitting Devices
20220389313 · 2022-12-08 ·

A white light emitting device comprises: an LED that generates excitation light of wavelength from 420 nm to 480 nm; and photoluminescence materials that generate light with a peak emission wavelength from 500 nm to 650 nm comprising a broadband phosphor, and a manganese-activated narrowband red fluoride phosphor with a peak emission wavelength from 628 nm to 640 nm and a full width at half maximum of less than 30 nm. The device generates white light with a selected color temperature from 2200K to 6500K, a General Color Rendering Index, CRI Ra, of at least 80, and a Duv (Delta u, v) from 0.0060 to 0.0170 for the selected color temperature and wherein the device has an LER (Luminous Efficacy of Radiation) of at least 320 lm/W.sub.opt.

Display apparatus

A display apparatus includes a blue light emitting element configured to emit blue light; a red light emitting element configured to emit red light; and a green light emitting element configured to emit green light. The blue light emitting element may include a first light emitting diode configured to emit light having a maximum intensity at a wavelength shorter than a blue wavelength; and a blue filter configured to transmit light having the blue wavelength.

Light-emitting device and display apparatus

Provided are a light-emitting device and a display apparatus. The light-emitting device includes: sub-pixels located on an array substrate, the sub-pixels each includes a first electrode and a second electrode that are disposed opposite to each other, and a quantum migrating layer between the first electrode and the second electrode. The quantum migrating layer includes a non-light-exiting region and a light-exiting region corresponding to a backlight source. Transparent charged particles and quantum dots, which can be driven by an electric field to migrate in the light-exiting region and the non-light-exiting region, are encapsulated in an accommodating cavity of the quantum migrating layer. When there are quantum dots gathered in the light-exiting region, the quantum dots are excited to emit light; when there is no quantum dot in the light-exiting region, the light emitted by the backlight source directly passes and exits through the light-exiting region.

Display panel and display device

The present disclosure provides a display panel and a display device. The display panel includes: a base substrate; a plurality of micro-LED groups located on the base substrate, wherein each of the plurality of micro-LED groups includes at least three micro-LEDs, and at least two micro-LEDs of each said micro-LED group have their longer sides arranged in different directions; and a shielding layer comprising a plurality of apertures located in shielding portions, wherein the shielding portions are located between adjacent micro-LEDs, and wherein the plurality of apertures each correlates one of the micro-LEDs.

DISPLAY DEVICE
20220384401 · 2022-12-01 ·

A display device according to one or more embodiments of the present disclosure includes a substrate, a first electrode and a second electrode on the substrate, a light emitting element electrically connected to the first electrode and the second electrode, and a first reflective layer on the light emitting element and including an opening overlapping the light emitting element, wherein the first reflective layer includes a material having a first reflectivity.

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
20220384397 · 2022-12-01 ·

The present disclosure relates to a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: one or more light emitting units, each including a first semiconductor layer, an active layer and a second semiconductor layer sequentially formed on a growth substrate; an electrode unit including a first semiconductor layer having a first conductivity and a metal layer formed on the first semiconductor layer; and one or more bonding layers for electrically connecting to the light emitting units and electrode unit, respectively, wherein each bonding layer has a first region on which the light emitting units and the electrode unit are arranged, and a second region having a larger planar area than that of the first region and being electrically connected to an external substrate.

DISPLAY DEVICE

A display device includes a plurality of electrodes disposed on a substrate and spaced apart from each other, a plurality of light-emitting elements disposed between the plurality of electrodes, a planarization layer disposed on the plurality of light-emitting elements, a lower reflective layer disposed on the planarization layer and comprising a first opening overlapping the plurality of light-emitting elements in a plan view, a wavelength conversion layer disposed on the lower reflective layer, and a functional layer disposed on the wavelength conversion layer and comprising a second opening overlapping the first opening in a plan view.