The invention provides luminescent material comprising E.sub.1-wSc.sub.1-x-y-u-wM.sub.yZ.sub.uA.sub.2wSi.sub.2-z-uGe.sub.zAl.sub.uO.sub.6:Cr.sub.x, wherein: E comprises one or more of Li, Na, and K; M comprises one or more of Al, Ga, In, Tm, Yb, and Lu; Z comprises one or more of Ti, Zr, and Hf; A comprises one or more of Mg, Zn, and Ni; 0<x≤0.25; 0≤y≤0.75; 0≤z≤2; 0≤u≤1; 0≤w≤1; x+y+u+w≤1; and z+u≤2.

A light emitting diode package including: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

A display device including a circuit board, and pixels each including a light emitting structure including epitaxial stacks and having a light emitting area defined by the epitaxial stacks, an encapsulating member covering a side surface and an upper surface of the light emitting structure, bump electrodes disposed on the light emitting structure, at least a portion of each bump electrode overlapping with the light emitting area, and fan-out lines disposed on the encapsulating member and electrically connected to the light emitting structure through the bump electrodes, in which at least a first portion of a surface of the fan-out lines is exposed to the outside to receive electrical signal for independent driving of the light emitting structure, and the first portion of the fan-out lines does not overlap the light emitting area in a plan view.

A method of manufacturing an optoelectronic device including assemblies of light-emitting diodes (LED) having first and second assemblies and first blocks made of a first photoluminescent material, each covering one of the first assemblies. The method includes the forming of a layer covering the first and second assemblies, the delimiting of first openings in the layer to expose the first assemblies, the filling of the first openings with the first material, and the performing of a chemical-mechanical polishing to delimit the first blocks.

A wavelength conversion device includes an LED chip. A PCB solder mask defines an opening at least partially encompassing the LED chip. A lens is optically coupled with the LED chip and includes phosphor particles, emulsifier particles, and lens shaping particles each immersed within the lens. In various instances, the wavelength conversion device may be operably coupled with a vehicle to form various light effects.

Provided are a wavelength converting particle, a method for manufacturing a wavelength converting particle, and a light-emitting diode containing a wavelength converting particle. The wavelength converting particle comprises a hybrid OIP nanocrystal that converts a wavelength of light generated by an excitation light source into a specified wavelength. Accordingly, it is possible to optically stabilize and improve color purity and light-emission performance without changes in a light-emitting wavelength range.

A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, ALi.sub.3XO.sub.4, M*.sub.(1−x*−y*−z*) Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E*.sub.e*N.sub.4-n*O.sub.n*], and combinations thereof.

Provided is a ceramic complex having high luminous characteristics. Proposed is a ceramic complex including a rare earth aluminate fluorescent material, glass, and calcium fluoride, wherein, when the total amount of the rare earth aluminate fluorescent material, the glass, and the calcium fluoride is taken as 100% by volume, the content of the rare earth aluminate fluorescent material is in a range of 15% by volume or more and 60% by volume or less, the content of the glass is in a range of 3% by volume or more and 84% by volume or less, and the content of the calcium fluoride is in a range of 1% by volume or more and 60% by volume of less.

The illumination optical system includes a beam shaper which converts an intensity distribution of a laser beam in each of a short axis direction and a long axis direction, which is a Gaussian distribution, into an intensity distribution of a parallel beam on a modulation surface of the optical modulator in each of the short axis direction and the long axis direction, which is a top hat distribution. The modulation surface and an irradiated surface are optically conjugated with respect to the long axis direction by a third lens and a fourth lens. Further, the modulation surface and a front focus position of the fourth lens are optically conjugated with respect to the short axis direction by a first lens, a second lens, and the third lens. The fourth lens condenses a beam having a top hat distribution at the front focus position onto the irradiated surface.

A light emitting device includes an LED die and a wavelength conversion layer. The LED die has a light emitting top surface and light emitting side surfaces. The wavelength conversion layer contains quantum dots and a photosensitive material, and is located on the light emitting top surface. A light emitting module including multiple light emitting devices is also disclosed.