The invention relates to an optoelectronic component, which, in at least one embodiment, comprises an optoelectronic semiconductor chip having an emission side and a conversion element on the emission side. The conversion element is configured for conversion of a primary beam emitted by the semiconductor chip in operation as intended. The conversion element is divided into at least one first layer and one second layer. The first layer is arranged between the second layer and the emission side. The first layer comprises a first matrix material having fluorescent particles introduced therein. The second layer comprises a second matrix material having fluorescent particles introduced therein. The first matrix material of the first layer has a higher index of refraction than the second matrix material of the second layer.

A light-emitting device in an aspect of the present invention includes at least one light emitter, a first phosphor, and a second phosphor. The first phosphor emits, in response to light emitted from the at least one light emitter, light having a first peak wavelength in a wavelength region of 400 to 480 nm. The second phosphor emits, in response to light emitted from the at least one light emitter, light having a second peak wavelength in a wavelength region of 480 to 600 nm. The at least one light emitter has a third peak wavelength in a wavelength region of 280 to 315 nm and emits light in the wavelength region of 280 to 315 nm.

A lighting device including at least one light emitter to emit blue light, a green phosphor having an emission peak in a range of 500 nm to 550 nm, a yellow phosphor having an emission peak in a range of 550 nm to 600 nm, and a red phosphor having an emission peak in a range of 600 nm to 650 nm, in which the yellow phosphor and the red phosphor have different full widths at half maximum, and the full width at half maximum of the yellow phosphor is longer than that of the red phosphor, and, in an emission spectrum, an intensity of light emitted from the lighting device increases from 500 nm to 600 nm, and the intensity of light emitted from the lighting device at 700 nm is less than about 10% of the maximum intensity of light emitted from the lighting device.

A light emitting apparatus including a first light emitter including at least one first light emitting diode and a wavelength converter, and a second light emitter including at least one second light emitting diode, in which the first light emitting diode emits light having a central wavelength in a range of violet or blue, the second light emitting diode emits light having a central wavelength in a range of about 400 nm to 420 nm, the wavelength converter includes green and red phosphors to convert light of the first light emitting diode into the white light, in the white light, an irradiance of light emitted from the first light emitting diode is less than that from the red phosphor, and an irradiance of light emitted from the second light emitting diode is greater than that of the white light emitted from the first light emitter at the same wavelength.

A display panel, a manufacturing method thereof, and a display apparatus are provided. The display panel includes a first display region; a plurality of first pixel units, wherein each of the first pixel units includes a light-transmitting region and a light-emitting device; a first substrate including a first portion for mounting the light-emitting device. A plurality of electrodes of the light-emitting device are electrically connected to a first driving circuit by an electric connecting wire, so that the under-screen sensing technique overlapping the optical display in space of the display panel is achieved, and a thickness of the display panel is reduced.

A luminophore may have the general formula A.sub.zE.sub.eX.sub.6:RE, where A is selected from bivalent elements, E is selected from tetravalent elements, X is selected from monovalent elements, and RE is selected from activator elements. In addition, 0.9≤z≤1.1, and 0.9≤e≤1.1. A method for producing such a luminophore is also disclosed. A radiation-emitting component may further include the luminophore.

A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including Sc.sub.1-x-yA.sub.yRE:Cr.sub.x, wherein MO=P.sub.3O.sub.9, BP.sub.3O.sub.12, SiP.sub.3O.sub.12; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0≤x≤0.75, 0≤y≤0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.

A full spectrum white light emitting device comprising: a broadband solid-state excitation source operable to generate broadband blue excitation light; and at least one photoluminescence material which generates green to red light, wherein the device generates white light whose intensity over the blue to cyan region of the spectrum has a maximum percentage deviation from the intensity of light of a black-body or CIE Standard Illuminant D of less than 50%.

The present disclosure provides a display panel, including: a first barrier wall, enclosing a plurality of first barrier wall openings; light-emitting devices, arranged corresponding to the plurality of first barrier wall openings; and color conversion units, including at least one color conversion unit being at least partially located in a corresponding first barrier wall opening, and at least partially beyond the corresponding first barrier wall opening. The present disclosure also provides a display device. Through the present disclosure, display effect of the display panel can be improved.

A downconverter layer transfer device, and methods of making and using the downconverter layer transfer device, are disclosed. A downconverter layer transfer device includes a release liner and a downconverter layer disposed on the release liner, the downconverter layer including a downconverter material dispersed throughout an adhesive, the downconverter layer being solid and non-adhesive at a first temperature, and adhesive at an elevated temperature above the first temperature