Patent classifications
H01L33/504
WHITE LIGHT SOURCE SYSTEM
A light emitting device including a substrate, a first light emitter to emit light having a first color temperature, and a second light emitter to emit light having a second color temperature, in which the first light emitter has a first converter including first phosphors and a first resin, each first phosphor having different half-value widths, the second light emitter has a second converter including second phosphors and a second resin, each second phosphor having different peak wavelengths, at least one phosphor of the first converter has a half-value width of 33 nm to 110 nm, a distance between peak wavelengths of at least two phosphors of the second converter is 150 nm or less, at least one phosphor of the first converter has a particle size of 5 um to 50 um, and a thickness of the second converter is in 0.07 mm to 1.5 mm.
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A display device according to an embodiment of the present invention comprises a color conversion substrate and a color conversion layer which convert light of a first color emitted by an LED to a second color and emit the light in all directions. The present invention can reduce LED transfer processes as the color conversion layer is included, and light-emitting efficiency can be increased by using the side-surface light emitted from the LEDs.
PHOSPHOR, LIGHT-EMITTING DEVICE, ILLUMINATION DEVICE, IMAGE DISPLAY DEVICE, AND INDICATOR LAMP FOR VEHICLE
A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and when, in a powder X-ray diffraction spectrum of the phosphor, the intensity of a peak that appears in a region where 2θ=38-39° is designated as Ix and the intensity of a peak that appears in a region where 2θ=37-38° is designated as Iy, the relative intensity Ix/Iy of Ix to Iy is 0.140 or less, and a light-emitting device comprising the phosphor.
LIGHT EMITTING DEVICE
A light emitting device has a substrate, a plurality of light emitting elements mounted on the substrate, a first wavelength conversion members disposed so as to cover at least a portion of the upper surface of at least two light emitting elements of the plurality of light emitting elements, a sealing material sealing the plurality of light emitting elements and the first wavelength conversion members, and a transparent layer formed of a material different from the sealing material and is disposed between the substrate, the plurality of light emitting elements and the first wavelength conversion members, and the sealing material, wherein at least one side of each of the plurality of light emitting elements is disposed so as to face a side surface of the other light emitting element of the at least two light emitting elements, and not cover at least a portion of the non-facing side surfaces thereof.
DIMMING AGENT AND LIGHT-EMITTING DEVICE CONTAINING DIMMING AGENT
A dimming agent according to one or more embodiments is disclosed that may include at least one of terbium, praseodymium, manganese, titanium. A diffuse reflection intensity of the dimming agent in a wavelength of from 400 nm to 750 nm may be 80% or less.
CHELATING AGENTS FOR QUANTUM DOT PRECURSOR MATERIALS IN COLOR CONVERSION LAYERS FOR MICRO-LEDS
A photocurable composition includes quantum dots, quantum dot precursor materials, a chelating agent, one or more monomers, and a photoinitiator. The quantum dots are selected to emit radiation in a first wavelength band in the visible light range in response to absorption of radiation in a second wavelength band in the UV or visible light range. The second wavelength band is different than the first wavelength band. The quantum dot precursor materials include metal atoms or metal ions corresponding to metal components present in the quantum dots. The chelating agent is configured to chelate the quantum dot precursor materials. The photoinitiator initiates polymerization of the one or more monomers in response to absorption of radiation in the second wavelength band.
Optoelectronic circuit comprising light emitting diodes
optoelectronic circuit intended to receive a variable voltage containing an alternation of rising and falling phases. The optoelectronic circuit includes light-emitting diodes and a switching device capable of allowing or of interrupting the flowing of a current through each light-emitting diode. Each light-emitting diode is covered with a photoluminescent layer. The photoluminescent layer covering at least one of the light-emitting diodes includes at least one first luminophore having a first decay constant and at least one second luminophore having a second decay constant different from the first decay constant.
Wavelength converter and method for producing thereof, and light emitting device using the wavelength converter
A wavelength converter 100 includes: a first phosphor 1 composed of an inorganic phosphor activated by Ce.sup.3+; and a second phosphor 2 composed of an inorganic phosphor activated by Ce.sup.3+ and different from the first phosphor. At least one of the first phosphor and the second phosphor is particulate. The first phosphor and the second phosphor are bonded to each other by at least one of a chemical reaction in a contact portion between the compound that constitutes the first phosphor and a compound that constitutes the second phosphor and of adhesion between the compound that constitutes the first phosphor and the compound that constitutes the second phosphor.
Optoelectronic device and manufacturing method thereof
An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a substrate, light emitting chips disposed on the substrate and electrically connected to the substrate, a first annular structure disposed on the substrate and around the light emitting chips, a first wavelength conversion layer disposed in the first annular structure and covering the light emitting chips, a second annular structure disposed on the substrate and around the light emitting chips and further being in contact with the first annular structure, and a second wavelength conversion layer disposed in the second annular structure and covering the first wavelength conversion layer and the light emitting chips. Wavelength conversion substances contained in the first wavelength conversion layer and the second wavelength conversion layer respectively are different in material. Therefore, the optoelectronic device can achieve improved uniformity of luminescence as well as light output quality.
DISPLAY DEVICE
A display device includes a lower metal layer disposed on a surface of a substrate and including a first opening overlapping a rear emission pixel in a plan view; a first electrode and a second electrode disposed in each of the rear emission pixel and a front emission pixel, the first electrode and the second electrode being spaced apart from each other on the lower metal layer; first light emitting elements disposed between the first electrode and the second electrode disposed in the rear emission pixel; second light emitting elements disposed between the first electrode and the second electrode disposed in the front emission pixel; and a reflective layer disposed on the first light emitting elements and overlapping the rear emission pixel in a plan view, the reflective layer overlaps at least one of the first light emitting elements in a plan view.