In a micro-device integration process, a donor substrate is provided on which to conduct the initial manufacturing and pixelation steps to define the micro devices, including functional, e.g. light emitting layers, sandwiched between top and bottom conductive layers. The microdevices are then transferred to a system substrate for finalizing and electronic control integration. The transfer may be facilitated by various means, including providing a continuous light emitting functional layer, breakable anchors on the donor substrates, temporary intermediate substrates enabling a thermal transfer technique, or temporary intermediate substrates with a breakable substrate bonding layer.

A circuit-board component and a manufacturing method thereof, and a light-emitting component and a manufacturing method thereof are provided in the disclosure. The light-emitting component includes the circuit-board component. The circuit-board component includes a circuit hoard, where multiple chip bonding areas are defined on the circuit board, and a weakening layer disposed on the circuit board and defining multiple cavities, where one chip bonding area corresponds to one cavity.

The application relates to a method for manufacturing an electronic device, and in particular, to a method for manufacturing an electronic device with a carrier substrate. The method includes: providing a carrier; forming a first base layer on the carrier; and forming working units on the first base layer. The working units are spaced apart from one another.

A die ejection apparatus operable to eject a die from a support has at least two ejector components configured to lift a die located on the support. The ejector components are moveable to a position in which a lifting force is exertable by the ejector components on the support, so as to lift a die located on the support. Movement of the die ejector components is initiated towards the support, and a moment when each of the die ejector components reaches the position is determined. A height offset of each die ejector component relative to a height of another die ejector component is determined upon reaching the said position, and relative heights of the die ejector components are adjusted in dependence upon the evaluated height offset.

A method for the transfer of components from a sender substrate to a receiver substrate includes provision and/or production of the components on the sender substrate, transfer of the components of the sender substrate to the transfer substrate, and transfer of the components from the transfer substrate to the receiver substrate.The components can be transferred selectively by means of bonding means and/or debonding means.

A semiconductor element arrangement structure is provided. The semiconductor element arrangement structure includes a carrier substrate, first and second adhesive layers respectively disposed on the carrier substrate and separated from each other, and first and second semiconductor elements disposed on the first and second adhesive layers, respectively. The first semiconductor element has first and second electrodes on the same side of the first semiconductor element, and the second semiconductor element has third and fourth electrodes on the same side of the second semiconductor element. The first adhesive layer is in direct contact with the first and second electrodes, and the second adhesive layer is in direct contact with the third and fourth electrodes. The first adhesive layer has a first width between the first and second electrodes and has a second width not between the first and second electrodes that is less than the first width.

A method of separating an electronic chip from a wafer is disclosed. In one aspect, the method comprises forming at least one trench in a back side of the wafer around at least part of the electronic chip to be separated, forming a back side metallization covering at least part of the back side and at least part of the at least one trench and attaching an adhesive layer of a tape to at least part of the back side metallization. The electronic chip is separated by removing material from a front side of the wafer along a separation path which includes part of the at least one trench in such a way that, during separating, the adhesive layer fills at least part of the at least one trench above a level of the back side metallization on the back side.

Discussed is a self-assembly apparatus of a semiconductor light emitting diode. The self-assembly apparatus can include a fluid chamber including a space to accommodate a fluid and semiconductor light emitting diodes having a magnetic metal, a magnet to apply a magnetic force to the semiconductor light emitting diodes in a state where an assembly surface of a board is submerged in the fluid, a power supply portion to induce an electric field between assembly electrodes provided on the board so that the semiconductor light emitting diodes become seated at predetermined positions of the board while the semiconductor light emitting diodes are moved by a change in a position of the magnet, and a repair portion disposed in the fluid chamber and to separate some of the semiconductor light emitting diodes seated on the board from the board. The repair portion can be configured to spray and suction the fluid.

One exemplary aspect relates to a process and apparatus for selectively changing adhesion strength between a flexible substrate and a carrier at specific locations to facilitate shipping and subsequent removal of the flexible substrate from the carrier. The process includes providing a flexible substrate comprising a plurality of integrated circuits thereon providing a carrier for the flexible substrate and adhering the flexible substrate to the carrier by creating an interface between the flexible substrate and the carrier. The process further includes changing the adhesion force between the flexible substrate and the carrier at selected locations by non-uniform treatment of the interface between the flexible substrate and the carrier with an electromagnetic radiation source (e.g. a laser, flashlamp, high powered LED, an infrared radiation source or the like) so as to decrease or increase the adhesion force between a portion of the flexible substrate and the carrier at the selected location.

An example of a method of making a heterogeneous semiconductor structure, includes providing a first substrate including a first material; providing a second substrate including a printable processable coupon, wherein the coupon includes a second material different from the first material; and printing the coupon to the first substrate. The method can includes processing the coupon on the first substrate to form an integrated circuit. An example of a heterogeneous structure includes a substrate including a first material and one or more non-native coupons disposed on the substrate, the coupon including a second material different from the first material. The second material can be or comprise an epitaxial material, such as a compound semiconductor material. The first material can be or comprise an elemental semiconductor, such as silicon.