A display apparatus including a panel substrate, and a light emitting source disposed on the panel substrate, in which the light emitting source includes a substrate, an electrode disposed on the substrate, a light emitting structure disposed on the electrode and having an n-type semiconductor layer, a p-type semiconductor layer, an n-type electrode, and a p-type electrode, a transparent electrode disposed on the light emitting structure, and an adhesive layer disposed on the light emitting structure, the n-type electrode is electrically connected to the electrode, the p-type electrode is electrically connected to the transparent electrode, and the adhesive layer is disposed between the p-type electrode and the transparent electrode.

A method of surface mounting micro-devices includes adhering a first plurality of micro-devices on a donor substrate to a transfer surface with an adhesive layer, removing the first plurality of micro-devices from donor substrate while the first plurality of micro-devices remain adhered to the transfer surface, positioning the transfer surface relative to a destination substrate so that a subset of the plurality of micro-devices on the transfer surface abut a plurality of receiving positions on the destination substrate, the subset including one or more micro-devices but less than all of micro-devices of the plurality of micro-devices, selectively neutralizing one or more of regions of the adhesive layer on the transfer surface corresponding to the subset of micro-device to light to detach the subset of micro-devices from the adhesive layer, and separating the transfer surface from the destination substrate such that the subset of micro-devices remain on the destination substrate.

A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

This disclosure is related to post processing steps for integrating of micro devices into system (receiver) substrate or improving the performance of the micro devices after transfer. Post processing steps for additional structure such as reflective layers, fillers, black matrix or other layers may be used to improve the out coupling or confining of the generated LED light. In another example, dielectric and metallic layers may be used to integrate an electro-optical thin film device into the system substrate with the transferred micro devices. In another example, color conversion layers are integrated into the system substrate to create different output from the micro devices.

Provided are a display panel and a transfer method. The display panel includes: an array substrate, where the array substrate includes a base substrate, and the base substrate comprises a plurality of sub-pixel setting regions arranged in an array; an insulating layer located on a side of the pixel driving circuit array facing away from the base substrate, where the pixel driving circuit array includes pixel driving circuits arranged in an array; the insulating layer forms accommodating grooves respectively within the plurality of sub-pixel setting regions; and the pixel driving circuits are disposed in one-to-one correspondence with the accommodating grooves; and data lines and heating lines, where each of the data lines is electrically connected to a respective column of pixel driving circuits among a plurality of columns of pixel driving circuits arranged in the array.

A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED, comprises: forming micro-LEDs (202) on a laser-transparent original substrate (201), providing an anisotropic conductive layer (203) on a receiving substrate (204), bringing the micro-LEDs (202) into contact with the anisotropic conductive layer (203) on the receiving substrate (204), irradiating the original substrate (201) with laser from the original substrate side to lift-off the micro-LEDs (202) from the original substrate (201), and processing the anisotropic conductive layer (203), to electrically connect the micro-LEDs (202) with the pads (205′) on the receiving substrate (204).

A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED (402) are disclosed. The method for transferring micro-LED (402) comprises: transferring at least one micro-LED (402) from an original substrate (406) to a support body (412); transferring the at least one micro-LED (402) from the support body (412) to a backup substrate (415); and transferring the at least one micro-LED (402) from the backup substrate (415) to a receiving substrate (417).

Electronic components are often assembled using robotic equipment, such as pick-and-place machines, that is not optimized for components such as ultra-thin semiconductor bare dice. Selective laser-assisted die transfer is described based on the unique blistering behavior of a multilayer dynamic release layer when irradiated by low energy focused laser pulse(s) in which the blister creates translation of the article being placed. Accurate placement results are provided with negligible lateral and angular displacement.

This disclosure is related to arranging micro devices in the donor substrate by either patterning or population so that there is no interfering with unwanted pads and the non-interfering area in the donor substrate is maximized. This enables to transfer the devices to receiver substrate with fewer steps.

A method of selecting semiconductor chips includes: A) providing the semiconductor chips in a composite, B) producing a cohesive, mechanical first connection between the semiconductor chips and a carrier film, C) singulating the semiconductor chips, wherein the carrier film mechanically connects the semiconductor chips to one another after singulation, D) selectively weakening the first connection between some singulated semiconductor chips and the carrier film, depending on electro-optical and/or electrical properties of the semiconductor chips, and E) removing the semiconductor chips whose first connection is selectively weakened from the carrier film.