The invention relates to a method for connecting a power semi-conductor chip having upper-sided potential surfaces to thick wires or strips, consisting of the following steps: Providing a metal molded body corresponding to the shape of the upper-sided potential surfaces, applying a connecting layer to the upper-sided potential surfaces or to the metal molded bodies, and applying the metal molded bodies and adding a material fit, electrically conductive compound to the potential surfaces prior to the joining of the thick wire bonds to the non-added upper side of the molded body.

A micro device transfer apparatus and a micro device transfer method are provided. The micro device transfer apparatus comprises a stage unit including a stage where a target substrate is to be disposed, a plurality of transfer head units disposed above the stage, and a transfer head unit moving part configured to move the plurality of transfer head units, wherein, the transfer head unit comprises a carrier substrate fastening part configured to fasten a carrier substrate where a plurality of micro devices are disposed, a mask unit disposed above the carrier substrate fastening part, the mask unit comprising a mask including an opening part and a shielding part, a light emitting part disposed on the mask unit, and a housing formed around the carrier substrate fastening part, the mask unit, and the light emitting part.

A die ejector includes a supporter configured to support a film on which a die is attached in a vertical direction, an elevation device in a hole of the supporter and configured to move the film with the die attached thereon in the vertical direction and in relation to the supporter, a driver configured to move the elevation device in the vertical direction, an air conduit guide in an enclosure region at least partially defined by an inner surface of the elevation device and having an inner surface defining an air flow conduit, a pressure adjuster device configured to induce air flow through the air flow conduit based on inducing a pressure gradient between the air flow conduit and the pressure adjuster device, and a flow guide in the air flow conduit and configured to control a flow of air through at least a portion of the air flow conduit.

Selective transfer of dies including semiconductor devices to a target substrate can be performed employing local laser irradiation. Coining of at least one set of solder material portions can be employed to provide a planar surface-to-surface contact and to facilitate bonding of adjoining pairs of bond structures. Laser irradiation on the solder material portions can be employed to sequentially bond selected pairs of mated bonding structures, while preventing bonding of devices not to be transferred to the target substrate. Additional laser irradiation can be employed to selectively detach bonded devices, while not detaching devices that are not bonded to the target substrate. The transferred devices can be pressed against the target substrate during a second reflow process so that the top surfaces of the transferred devices can be coplanar. Wetting layers of different sizes can be employed to provide a trapezoidal vertical cross-sectional profile for reflowed solder material portions.

According to one embodiment, a manufacturing method of a semiconductor device includes the transferring a first group from a first support to a second support; the deforming the second support to convert each pitch of the semiconductor chips in the first group transferred on the second support into a second pitch different from the first pitch; the forming an insulating layer around each of the semiconductor chips, the insulating layer covering each of the semiconductor chips in the first group arranged in the second pitch; and the dicing the insulating layer. The first group is selected from a plurality of semiconductor chips supported by the first support. The plurality of semiconductor chips is arranged in an initial pitch. The first group is arranged in a first pitch being longer than the initial pitch.

A semiconductor device has a semiconductor package including a substrate with a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A metal mask having a fiducial marker is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The metal mask is removed after forming the shielding layer.

A manufacturing method includes the step of laminating a sheet assembly onto chips arranged on a processing tape, where the sheet assembly has a multilayer structure including a base and a sinter-bonding sheet and is laminated so that the sinter-bonding sheet faces the chips, and subsequently removing the base B from the sinter-bonding sheet. The chips on the processing tape are picked up each with a portion of the sinter-bonding sheet adhering to the chip, to give sinter-bonding material layer-associated chips. The sinter-bonding material layer-associated chips are temporarily secured through the sinter-bonding material layer to a substrate. The sinter-bonding material layers lying between the temporarily secured chips and the substrate are converted through a heating process into sintered layers, to bond the chips to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to semiconductor chips while reducing loses of the sinter-bonding material.

A carrier substrate includes a base layer, an antireflection layer, and an energy absorption layer, wherein the antireflection layer is formed on one surface of the base layer and allows an elastic wave generated by a first laser beam transmitted through an element adhesively bonded to the antireflection layer to be transmitted through the base layer without being reflected towards the element, the first laser beam being applied to the element through a source substrate of the element, and the energy absorption layer is formed between the base layer and the antireflection layer to be aligned with the element, and evaporates upon energy absorption.

An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to the destination substrate, and a controller. The controller is configured to operate the adhesive dispenser to selectively dispense the adhesive onto selected micro-devices on the donor substrate based on a desired spacing of the selected micro-devices on the destination substrate. The controller is configured to operate the transfer device such that the transfer surface engages the adhesive on the donor substrate to cause the selected micro-devices to adhere to the transfer surface and the transfer surface then transfers the selected micro-devices from the donor substrate to the destination substrate.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of heating the polyester sheet in each of the plurality of separate regions corresponding to each device chip, pushing up each device chip through the polyester sheet, then picking up each device chip from the polyester sheet.